APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

7 Feb 2011

Volume 98, Issue 6, Articles (06xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 98, 063101 (2011); http://dx.doi.org/10.1063/1.3551574 (3 pages)

Y. Z. He, H. Li, P. C. Si, Y. F. Li, H. Q. Yu, X. Q. Zhang, F. Ding, K. M. Liew, and X. F. Liu
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Strain-tunable spin transport in ferromagnetic graphene junctions

Feng Zhai and Lin Yang

Appl. Phys. Lett. 98, 062101 (2011); http://dx.doi.org/10.1063/1.3552716 (3 pages) | Cited 5 times

Online Publication Date: 7 February 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We investigate spin-dependent electronic transport through normal/strained/normal/ferromagnetic/normal graphene junctions. The substrate strain leads to opposite shifts of the K and K′ valleys and thus modulates the orbital motion of Dirac electrons. The energy dependence of this effect together with the exchange splitting can be utilized to design a strain-tunable spin filter.
Show PACS
72.25.Mk Spin transport through interfaces
73.40.-c Electronic transport in interface structures
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
71.70.Gm Exchange interactions
75.30.Et Exchange and superexchange interactions

The p-type ZnO film realized by a hydrothermal treatment method

Meng Ding, Dongxu Zhao, Bin Yao, Binghui Li, Zhenzhong Zhang, and Dezhen Shen

Appl. Phys. Lett. 98, 062102 (2011); http://dx.doi.org/10.1063/1.3549304 (3 pages) | Cited 9 times

Online Publication Date: 7 February 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Reproducible and high quality N-doped ZnO (ZnO:N) films were achieved by a hydrothermal treatment method. The ZnO:N films exhibited p-type characteristics by means of the Hall-effect and the photoluminescence measurements. At room temperature, the electrical properties of ZnO:N film showed a hole concentration of 1×1016 cm−3 and hole mobility of 8.6 cm2 V−1 s−1. At 83 K two acceptor related emission peaks could be observed located at 3.353 and 3.237 eV, which were assigned to the acceptor-bound exciton and the donor-acceptor pair emissions. This result gave a direct evidence for the generation of the acceptor energy level after the hydrothermal treatment process. Also, a ZnO homojunction diode was fabricated by this method, which displayed a good rectification characteristic at room temperature. This study revealed that the hydrothermal treatment method was effective and practicable in producing p-type ZnO.
Show PACS
81.05.Dz II-VI semiconductors
78.66.Hf II-VI semiconductors
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
85.30.Kk Junction diodes
78.55.Et II-VI semiconductors
73.61.Ga II-VI semiconductors

Direct measurement of the band gap and Fermi level position at InN(11math0)

Ph. Ebert, S. Schaafhausen, A. Lenz, A. Sabitova, L. Ivanova, M. Dähne, Y.-L. Hong, S. Gwo, and H. Eisele

Appl. Phys. Lett. 98, 062103 (2011); http://dx.doi.org/10.1063/1.3553022 (3 pages) | Cited 9 times

Online Publication Date: 7 February 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A nonpolar stoichiometric InN(11math0) surface freshly cleaved inside UHV was investigated by scanning tunneling microscopy and spectroscopy. Due to the absence of intrinsic surface states in the band gap, scanning tunneling spectroscopy yields directly the fundamental bulk band gap of 0.7±0.1 eV. The Fermi energy is pinned 0.3 eV below the conduction band minimum due to cleavage induced defect states. Thus, intrinsic electron accumulation can be excluded for this surface. Electron accumulation is rather an extrinsic effect due to surface contamination or material decomposition, but not an intrinsic material property of InN.
Show PACS
73.20.At Surface states, band structure, electron density of states
71.20.Nr Semiconductor compounds

Theory of quasiballistic transport through nanocrystalline silicon dots

Nobuya Mori, Hideki Minari, Shigeyasu Uno, Hiroshi Mizuta, and Nobuyoshi Koshida

Appl. Phys. Lett. 98, 062104 (2011); http://dx.doi.org/10.1063/1.3553501 (3 pages) | Cited 3 times

Online Publication Date: 7 February 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A model to describe the underlying physics of high-energy electron emission from a porous silicon diode is presented. The model is based on an atomistic tight-binding method combined with semiclassical Monte Carlo simulation. It well reproduces essential features of experimental findings. An initial acceleration region is shown to play a crucial role in generating quasiballistic electron emission.
Show PACS
73.23.Ad Ballistic transport
85.30.Kk Junction diodes
73.63.Kv Quantum dots

Metastable properties of Cu(In1−xGax)Se2 with and without sodium

Peter T. Erslev, William N. Shafarman, and J. David Cohen

Appl. Phys. Lett. 98, 062105 (2011); http://dx.doi.org/10.1063/1.3553783 (3 pages) | Cited 5 times

Online Publication Date: 9 February 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We compare the electronic properties of Cu(In1−xGax)Se2 (CIGS, x = 0.3) companion films with standard and nearly absent sodium levels. The films were examined over a wide range of metastable states produced by light-soaking. Admittance spectroscopy revealed that the activation energy of the dominant deep defect (hole trap) decreased monotonically from 300 to 60 meV with light-soaking time for samples with normal sodium, but remained nearly fixed ( ∼ 350 meV) for samples without sodium. Drive-level capacitance profiling indicated that the deep defect densities increased under light-soaking by roughly a factor of 20 for both samples and annealed at identical rates; however, the relative increases between the defect and hole carrier densities were dramatically different.
Show PACS
71.20.Ps Other inorganic compounds
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Gh Other heat and thermomechanical treatments
71.55.Ak Metals, semimetals, and alloys
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Sub-100-nm negative bend resistance ballistic sensors for high spatial resolution magnetic field detection

A. M. Gilbertson, D. Benstock, M. Fearn, A. Kormányos, S. Ladak, M. T. Emeny, C. J. Lambert, T. Ashley, S. A. Solin, and L. F. Cohen

Appl. Phys. Lett. 98, 062106 (2011); http://dx.doi.org/10.1063/1.3554427 (3 pages)

Online Publication Date: 10 February 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the magnetic field detection properties of ballistic sensors utilizing the negative bend resistance of InSb/In1−xAlxSb quantum well cross junctions as a function of temperature and geometric size. We demonstrate that the maximum responsivity to magnetic field and its linearity increase as the critical device dimension is reduced. This observation deviates from the predictions of the classical billiard ball model unless significant diffuse boundary scattering is included. The smallest device studied has an active sensor area of 35×35 nm2, with a maximum responsivity of 20 kΩ/T, and a noise-equivalent field of 0.87 μT/math at 100 K.
Show PACS
07.55.Ge Magnetometers for magnetic field measurements
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Experimental demonstration of In0.53Ga0.47As field effect transistors with scalable nonalloyed source/drain contacts

Jenny Hu, Krishna C. Saraswat, and H.-S. Philip Wong

Appl. Phys. Lett. 98, 062107 (2011); http://dx.doi.org/10.1063/1.3553192 (3 pages) | Cited 5 times

Online Publication Date: 10 February 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate the integration of a nonalloyed contact structure developed for III-V semiconductors to the source/drain of an In0.53Ga0.47As metal-oxide-semiconductor field effect transistor (MOSFET) with atomic layer deposition (ALD) Al2O3 high-κ dielectric. This nonalloyed contact utilizes single metals in combination with dielectric dipoles to tune the metal/semiconductor Femi level pinning toward the semiconductor’s band edge for minimal contact resistance and barrier height. The metal/III-V semiconductor effective barrier heights have been reduced by as much as 0.40 eV using SiN and 0.55 eV using Al2O3 dielectrics. With this InGaAs nMOSFET as a starting point, this contact can be applied to other III-V n-type MOSFETs, p-type MOSFETs, and Schottky Barrier field effect transistors.
Show PACS
85.30.Tv Field effect devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.40.Sz Deposition technology

Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3(Gd2O3) passivation

C. A. Lin, H. C. Chiu, T. H. Chiang, T. D. Lin, Y. H. Chang, W. H. Chang, Y. C. Chang, W.-E. Wang, J. Dekoster, T. Y. Hoffmann, M. Hong, and J. Kwo

Appl. Phys. Lett. 98, 062108 (2011); http://dx.doi.org/10.1063/1.3554375 (3 pages) | Cited 13 times

Online Publication Date: 11 February 2011

Full Text: Read Online (HTML) | Download PDF


See Also: Publisher's Note

Show Abstract
The pronounced high interfacial densities of states (Dit) commonly observed around the midgap energy of dielectric/GaAs interfaces are generally considered the culprit responsible for the poor electrical performance of the corresponding inversion-channel metal-oxide-semiconductor field-effect-transistors. In this work, comprehensive Dit spectra as the function of energy [Dit(E)] inside the In0.2Ga0.8As band gap were constructed by using the quasistatic capacitance-voltage and the temperature-dependent conductance method on n- and p-type ultrahigh vacuum (UHV)-Ga2O3(Gd2O3)/In0.2Ga0.8As and atomic-layer-deposited (ALD)-Al2O3/In0.2Ga0.8As metal-oxide-semiconductor capacitors. Unlike the ALD-Al2O3/In0.2Ga0.8As interface giving a Dit spectrum with a high midgap Dit peak, the UHV-Ga2O3(Gd2O3)/In0.2Ga0.8As interface shows a Dit spectrum that monotonically decreases from the valence band to the conduction band with no discernible midgap peak.
Show PACS
73.20.At Surface states, band structure, electron density of states
73.61.Ey III-V semiconductors
85.30.Tv Field effect devices
81.65.Rv Passivation
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close