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7 Feb 2011

Volume 98, Issue 6, Articles (06xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 98, 063101 (2011); http://dx.doi.org/10.1063/1.3551574 (3 pages)

Y. Z. He, H. Li, P. C. Si, Y. F. Li, H. Q. Yu, X. Q. Zhang, F. Ding, K. M. Liew, and X. F. Liu
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Intersubband gain without global inversion through dilute nitride band engineering

Mauro F. Pereira, Jr. and Stanko Tomić

Appl. Phys. Lett. 98, 061101 (2011); http://dx.doi.org/10.1063/1.3552204 (3 pages) | Cited 1 time

Online Publication Date: 7 February 2011

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We investigate the possibility of interconduction band gain without global inversion by engineering the conduction band effective masses so that the upper lasing subband has an effective mass considerably smaller than the lower lasing subband that could not be obtained in conventional III-V materials. We recover the expected dispersive gain shape for similar masses and contrasting results if the effective masses characterizing the relevant subbands are very different.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Multifrequency terahertz lasing from codoped silicon crystals

S. G. Pavlov, R. Eichholz, N. V. Abrosimov, B. Redlich, and H.-W. Hübers

Appl. Phys. Lett. 98, 061102 (2011); http://dx.doi.org/10.1063/1.3553769 (3 pages) | Cited 3 times

Online Publication Date: 7 February 2011

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Stimulated terahertz emission in the range from 4.5 to 6.4 THz has been realized from a single silicon crystal doped by two hydrogen-like donor centers, phosphorus and antimony, when pumped by midinfrared radiation from a free electron laser. Intracenter as well as Raman lasing has been observed. Simultaneous laser emission from both donors occurs when the pump photon energy is sufficient for photoionization of the antimony donors. The laser processes of both donors are not influenced by each other. Therefore the codoping approach can be extended to other group-V donors including more than two dopants in a single crystal.
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42.50.Pq Cavity quantum electrodynamics; micromasers
42.55.Ye Raman lasers
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Tunable single mode lasing from an on-chip optofluidic ring resonator laser

Wonsuk Lee, Hao Li, Jonathan D. Suter, Karthik Reddy, Yuze Sun, and Xudong Fan

Appl. Phys. Lett. 98, 061103 (2011); http://dx.doi.org/10.1063/1.3554362 (3 pages) | Cited 6 times

Online Publication Date: 8 February 2011

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Single mode lasing from the polydimethylsiloxane based on-chip coupled optofluidic ring resonator (OFRR) with the lasing threshold of a few μJ/mm2 is demonstrated using the Vernier effect. The single mode operation is highly stable even at high pump energy densities. The effect of the OFRR size and coupling strength on the single mode emission is investigated, showing that the excessive coupling results in incomplete side mode suppression. Tuning of the lasing wavelength is achieved by modifying the dye solution.
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42.55.Mv Dye lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Sa Microcavity and microdisk lasers
42.82.Gw Other integrated-optical elements and systems
47.85.Np Fluidics
42.60.Fc Modulation, tuning, and mode locking

Ultrashort pulses characterization by nonlinear diffraction from virtual beam

A. S. Aleksandrovsky, A. M. Vyunishev, A. I. Zaitsev, A. A. Ikonnikov, and G. I. Pospelov

Appl. Phys. Lett. 98, 061104 (2011); http://dx.doi.org/10.1063/1.3554370 (3 pages) | Cited 6 times

Online Publication Date: 8 February 2011

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Noncollinear frequency doubling in a random nonlinear photonic crystal of strontium tetraborate via nonlinear diffraction from virtual beam is investigated. This effect is shown to be useful for ultrashort pulses characterization in broad spectral range. Nonlinear photonic crystals of strontium tetraborate are a promising medium for ultrafast diagnostics in short-wavelength applications.
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42.70.Mp Nonlinear optical crystals
42.70.Qs Photonic bandgap materials
42.25.Fx Diffraction and scattering
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Electroluminescence from amorphous-SiNx:H/SiO2 multilayers using lateral carrier injection

L. Kamyab, Rusli, M. B. Yu, L. Ding, and G.-Q. Lo

Appl. Phys. Lett. 98, 061105 (2011); http://dx.doi.org/10.1063/1.3553778 (3 pages) | Cited 1 time

Online Publication Date: 8 February 2011

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We report the observation of photoluminescence and electroluminescence from amorphous-SiNx:H/SiO2 multilayer structures. An effective method of current injection has been implemented for electrical excitation of these structures whereby the electric field is applied parallel to the plane of the multilayers. Compared to conventional electrical injection with current flowing normal to the plane of multilayers, this method has greatly improved the current density. Such structures are promising candidate as Si based light source for Si optoelectronics technology.
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78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
73.40.-c Electronic transport in interface structures
78.55.Hx Other solid inorganic materials
78.60.Fi Electroluminescence

Terahertz/optical sum and difference frequency generation in liquids

Thomas Feil and S. J. Allen

Appl. Phys. Lett. 98, 061106 (2011); http://dx.doi.org/10.1063/1.3552964 (3 pages) | Cited 1 time

Online Publication Date: 9 February 2011

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A high-sensitivity setup for the observation of χ(2)-based, terahertz/optical, sum and difference frequency generation in liquids is presented. It relies on launching wavefront modulated terahertz radiation into a liquid traversed by an optical beam. Phase matching and polarization selection rules can be tuned to support three wave mixing via either chiral allowed electric dipole processes or higher order quadrupole/magnetic dipole processes. Under nonresonant excitation, hyperpolarizabilities from quadrupole/magnetic dipole processes are measured. Since this approach does not require terahertz transmission through macroscopic thicknesses of water, it has the potential to open a new window on the terahertz dynamics of water solvated molecules.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.An Optical susceptibility, hyperpolarizability
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Two-color terahertz response in bilayer graphene nanoribbons with spin-orbit coupling

Junfeng Liu, Bo Wang, Zhongshui Ma, and C. Zhang

Appl. Phys. Lett. 98, 061107 (2011); http://dx.doi.org/10.1063/1.3555631 (3 pages) | Cited 1 time

Online Publication Date: 10 February 2011

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We demonstrate that spin-orbit coupling can give rise to a strong terahertz response in metallic armchair bilayer graphene nanoribbons. The combination of the interlayer coupling and the spin-orbit coupling leads to double resonant optical response in the low frequency regime. The frequency separation of the two excitations is tunable with a gate voltage.
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78.70.Gq Microwave and radio-frequency interactions
78.67.Wj Optical properties of graphene
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
73.22.Pr Electronic structure of graphene

Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy

J. Werner, M. Oehme, M. Schmid, M. Kaschel, A. Schirmer, E. Kasper, and J. Schulze

Appl. Phys. Lett. 98, 061108 (2011); http://dx.doi.org/10.1063/1.3555439 (3 pages) | Cited 15 times

Online Publication Date: 10 February 2011

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GeSn heterojunction p-i-n diodes with a Sn content of 0.5% are grown with a special low temperature molecular beam epitaxy. The Sn incorporation in Ge is facilitated by a very low temperature growth step in order to suppress Sn surface segregation. Diodes with sharp doping transitions are realized as double mesa structures with a diameter from 1.5 up to 80 μm. An optical responsivity of these GeSn diodes of 0.1 A/W at a wavelength of λ = 1.55 μm is measured. In comparison with a pure Ge detector the optical responsivity is increased by factor of 3 as a result of Sn caused band gap reduction.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
61.72.uj III-V and II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes

R. Roucka, J. Mathews, R. T. Beeler, J. Tolle, J. Kouvetakis, and J. Menéndez

Appl. Phys. Lett. 98, 061109 (2011); http://dx.doi.org/10.1063/1.3554747 (3 pages) | Cited 13 times

Online Publication Date: 11 February 2011

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Electroluminescence spectra from Si/Ge1−ySny heterostructure diodes are reported. The observed emission is dominated by direct gap optical transitions and displays the expected compositional dependence of the peak energy. Weaker indirect gap emission is also observed, and their energies are consistent with a closing of the indirect-direct separation as the Sn concentration is increased. The intensity of the EL spectra shows a superlinear dependence on the injection current, which is modeled using a Van Roosbroeck–Shockley expression for the emission intensity. The model assumes quasiequilibrium conditions for the electrons populating the different valleys in the conduction band of Ge.
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85.30.Kk Junction diodes
85.60.Jb Light-emitting devices

Single-mode quantum cascade lasers based on a folded Fabry-Perot cavity

Peter Q. Liu, Xiaojun Wang, Jen-Yu Fan, and Claire F. Gmachl

Appl. Phys. Lett. 98, 061110 (2011); http://dx.doi.org/10.1063/1.3554757 (3 pages) | Cited 2 times

Online Publication Date: 11 February 2011

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We demonstrate single-mode quantum cascade lasers employing a folded Fabry-Perot cavity consisting of two straight sections connected by a semicircular section in a “hairpin” shape. These folded cavity lasers emitting at ∼ 4.5 μm are fabricated with identical processes as those for plain Fabry-Perot ridge lasers, and show a strong suppression of the comb of Fabry-Perot cavity modes, leading to tunable single-mode emission with up to 27 dB side mode suppression ratio and a single-mode operating current range of up to 60% above the threshold current when operated in pulsed mode; single-mode emission is achieved from 80 to ∼ 240 K.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Nondiffracting kagome lattice

Martin Boguslawski, Patrick Rose, and Cornelia Denz

Appl. Phys. Lett. 98, 061111 (2011); http://dx.doi.org/10.1063/1.3554759 (3 pages) | Cited 4 times

Online Publication Date: 11 February 2011

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We introduce a generalized approach to generate an elementary nondiffracting beam, whose transverse intensity is distributed corresponding to a two-dimensional kagome structure. Furthermore, we present an effective experimental implementation via a computer controlled phase controlling spatial light modulator in combination with a specific Fourier filter system. Intensity and phase analysis of the kagome lattice beam accounts for an experimental wave field implementation. Altogether, the examined wave field may be a fundament for the fabrication of large two-dimensional photonic crystals or photonic lattices in kagome symmetry using miscellaneous holographic matter structuring techniques.
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42.79.Hp Optical processors, correlators, and modulators
42.30.Kq Fourier optics
42.79.Ci Filters, zone plates, and polarizers

A terahertz pulse emitter monolithically integrated with a quantum cascade laser

David Burghoff, Tsung-Yu Kao, Dayan Ban, Alan Wei Min Lee, Qing Hu, and John Reno

Appl. Phys. Lett. 98, 061112 (2011); http://dx.doi.org/10.1063/1.3553021 (3 pages) | Cited 6 times

Online Publication Date: 11 February 2011

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A terahertz pulse emitter monolithically integrated with a quantum cascade laser (QCL) is demonstrated. The emitter facet is excited by near-infrared pulses from a mode-locked Ti:sapphire laser, and the resulting current transients generate terahertz pulses that are coupled into an electrically isolated QCL in proximity. These pulses are used to measure the gain of the laser transition at ∼ 2.2 THz, which clamps above threshold at ∼ 18 cm−1 and has a full width at half-maximum linewidth of ∼ 0.67 THz. The measurement also shows the existence of absorption features at different biases that correspond to misalignment of the band structure and to absorption within the two injector states. The simplicity of this scheme allows it to be implemented alongside standard QCL ridge processing and to be used as a versatile tool for characterizing QCL gain media.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.82.-m Integrated optics
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