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7 Feb 2011

Volume 98, Issue 6, Articles (06xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 98, 063101 (2011); http://dx.doi.org/10.1063/1.3551574 (3 pages)

Y. Z. He, H. Li, P. C. Si, Y. F. Li, H. Q. Yu, X. Q. Zhang, F. Ding, K. M. Liew, and X. F. Liu
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InN/InGaN multiple quantum wells emitting at 1.5 μm grown by molecular beam epitaxy

J. Grandal, J. Pereiro, A. Bengoechea-Encabo, S. Fernández-Garrido, M. A. Sánchez-García, E. Muñoz, E. Calleja, E. Luna, and A. Trampert

Appl. Phys. Lett. 98, 061901 (2011); http://dx.doi.org/10.1063/1.3552195 (3 pages) | Cited 4 times

Online Publication Date: 7 February 2011

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This work reports on the growth by molecular beam epitaxy and characterization of InN/InGaN multiple quantum wells (MQWs) emitting at 1.5 μm. X-ray diffraction (XRD) spectra show satellite peaks up to the second order. Estimated values of well (3 nm) and barrier (9 nm) thicknesses were derived from transmission electron microscopy and the fit between experimental data and simulated XRD spectra. Transmission electron microscopy and XRD simulations also confirmed that the InGaN barriers are relaxed with respect to the GaN template, while the InN MQWs grew under biaxial compression on the InGaN barriers. Low temperature (14 K) photoluminescence measurements reveal an emission from the InN MQWs at 1.5 μm. Measurements as a function of temperature indicate the existence of localized states, probably due to InN quantum wells’ thickness fluctuations as observed by transmission electron microscopy.
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68.65.Fg Quantum wells
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.21.Fg Quantum wells
78.55.Cr III-V semiconductors
78.67.De Quantum wells
68.55.ag Semiconductors

An analytical model of strain isolation for stretchable and flexible electronics

H. Cheng, J. Wu, M. Li, D.-H. Kim, Y.-S. Kim, Y. Huang, Z. Kang, K. C. Hwang, and J. A. Rogers

Appl. Phys. Lett. 98, 061902 (2011); http://dx.doi.org/10.1063/1.3553020 (3 pages) | Cited 3 times

Online Publication Date: 7 February 2011

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One important aspect of stretchable electronics design is to shield the active devices from strains through insertion of a soft layer between devices and substrate. An analytical model is established, which gives linear dependence of strain isolation on the reciprocal of strain-isolation layer thickness, and the reciprocal of device and substrate stiffness. Strain isolation is also linearly proportional to the shear modulus of strain-isolation layer and square of device length.
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85.30.De Semiconductor-device characterization, design, and modeling

Selective control of polarized emission from patterned GaN/AlN quantum dot ensembles on Si(111)

O. Moshe, D. H. Rich, B. Damilano, and J. Massies

Appl. Phys. Lett. 98, 061903 (2011); http://dx.doi.org/10.1063/1.3554371 (3 pages) | Cited 3 times

Online Publication Date: 9 February 2011

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GaN/AlN quantum dots (QDs) were grown by the Stranski–Krastanov method on Si(111). The thermal expansion coefficient mismatch between the Si substrate and GaN/AlN film leads to an additional biaxial tensile stress of 20–30 kbar in the III-nitride film, which we have selectively modified by etching a cross-hatched pattern into the as-grown sample. The results show that a suitable choice of stripe orientation and width from ∼ 2 to 10 μm can create regions of in-plane uniaxial stress that enable a selective and local control of the polarized luminescence from ensembles of QDs which were probed with cathodoluminescence.
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81.07.Ta Quantum dots
78.67.Hc Quantum dots
78.60.Hk Cathodoluminescence, ionoluminescence
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems

Metamagnetic phase transformation in Mn50Ni37In10Co3 polycrystalline alloy

Zhigang Wu, Zhuhong Liu, Hong Yang, Yinong Liu, and Guangheng Wu

Appl. Phys. Lett. 98, 061904 (2011); http://dx.doi.org/10.1063/1.3554423 (3 pages) | Cited 6 times

Online Publication Date: 9 February 2011

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This letter reports on an alloy design of Mn50Ni37In10Co3 based on the principle of Mn-Mn ferromagnetic coupling via Co doping. The alloy is shown to exhibit a metamagnetic martensitic transformation and a high saturation magnetization of 118 emu/g in its austenitic state. The transformation generates a large magnetization difference of 89 emu/g, more than 200% of what is reported in the literature for similar alloys. A complete magnetic field induced martensitic transformation was achieved at 170 K. Such a high magnetization difference provides a strong driving force for magnetic-field-induced transformation, making this material a promising candidate for magnetic actuation applications.
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75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
81.30.Kf Martensitic transformations
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Cc Other ferromagnetic metals and alloys

The enhanced binding energy for biexcitons in InAs quantum dots

Yasuaki Masumoto, Seitaro Yoshida, Michio Ikezawa, Shinichi Tomimoto, and Yoshiki Sakuma

Appl. Phys. Lett. 98, 061905 (2011); http://dx.doi.org/10.1063/1.3554425 (3 pages)

Online Publication Date: 9 February 2011

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We observed that the biexciton binding energy in InAs quantum rhombic disks (QRDs) is enhanced by twice compared with that for InAs quantum dots (QDs) so far reported around 1.24 μm nearby the telecommunication wavelength. The heterodyne-detected four-wave-mixing detected the exciton-biexciton quantum beat superposed on photon echo decay, giving the biexciton binding energy of 3.4 meV to 3 monolayer (ML) InAs QRDs and 4.1 meV to 4 ML InAs QRDs, respectively. The largest biexciton binding energy of 4.1 meV in InAs QDs is ascribed to increased electron-hole overlap in confined geometry with a minimized strain distribution.
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73.21.La Quantum dots
78.67.Hc Quantum dots
71.35.-y Excitons and related phenomena
78.47.jm Quantum beats
78.47.jf Photon echoes
62.23.Eg Nanodots

Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements

G. Callsen, J. S. Reparaz, M. R. Wagner, R. Kirste, C. Nenstiel, A. Hoffmann, and M. R. Phillips

Appl. Phys. Lett. 98, 061906 (2011); http://dx.doi.org/10.1063/1.3554434 (3 pages) | Cited 4 times

Online Publication Date: 9 February 2011

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We report the phonon deformation potentials of wurtzite GaN and ZnO for all zone center optical phonon modes determined by Raman measurements as a function of uniaxial pressure. Despite all the structural and optical similarities between these two material systems, the pressure dependency of their vibrational spectra exhibits fundamental distinctions, which is attributed to their different bond ionicities. In addition, the LO-TO splitting of the A1 and E1 phonon modes is analyzed which yields insight into the uniaxial pressure dependency of Born’s transverse effective charge eT∗.
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78.30.Fs III-V and II-VI semiconductors
81.40.Vw Pressure treatment
62.20.F- Deformation and plasticity
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
81.40.Lm Deformation, plasticity, and creep

A comparative study of photoluminescence of Zn-polar and O-polar faces in single crystal ZnO using moment analysis

Aishi Yamamoto, Yuta Moriwaki, Ken Hattori, and Hisao Yanagi

Appl. Phys. Lett. 98, 061907 (2011); http://dx.doi.org/10.1063/1.3554722 (3 pages) | Cited 2 times

Online Publication Date: 9 February 2011

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We report on differences in photoluminescence (PL) spectra between Zn-polar and O-polar faces in single crystal ZnO. The PL intensity ratios of one phonon to two phonon replicas of free-excitons in the two polar faces were found to be the same. This result clearly indicates that exciton-phonon coupling strengths in both faces are the same. From moment analysis, however, the relative PL intensity of the zero-phonon free-excitons in the O-polar face was larger than that in the Zn-polar face. We propose that the opposite band bending at the two polar faces causes the difference in the PL properties.
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78.55.Et II-VI semiconductors
71.35.-y Excitons and related phenomena
63.20.kk Phonon interactions with other quasiparticles

Triaxial stress distributions in Cu/low-k interconnect features

Conal E. Murray, Paul R. Besser, E. Todd Ryan, and Jean L. Jordan-Sweet

Appl. Phys. Lett. 98, 061908 (2011); http://dx.doi.org/10.1063/1.3549876 (3 pages) | Cited 3 times

Online Publication Date: 9 February 2011

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The distribution of triaxial stresses within single damascene Cu/organosilicate interconnect structures as a function of linewidth, ranging from 45 to 250 nm, was measured using x-ray diffraction. Least-squares minimization techniques were employed to determine the volume-averaged stress tensors of the Cu features. Longitudinal Cu stress values increased for linewidths below 100 nm, while transverse stresses decreased with decreasing linewidth below 100 nm due to the interplay between the Cu microstructure and the feature geometry. Large tensile out-of-plane stresses were observed in all of the lines demonstrating the constraint imposed by the barrier layers that encapsulate the Cu.
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81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
77.55.Bh Low-permittivity dielectric films

Observation of tunneling of slow and fast electromagnetic modes in coupled periodic waveguides

Sangwoo Ha, Andrey A. Sukhorukov, Andrei V. Lavrinenko, Ilya V. Shadrivov, David A. Powell, and Yuri S. Kivshar

Appl. Phys. Lett. 98, 061909 (2011); http://dx.doi.org/10.1063/1.3553785 (3 pages) | Cited 3 times

Online Publication Date: 9 February 2011

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We report the experimental observation of tunneling of slow and fast electromagnetic modes in coupled periodic waveguides shifted longitudinally by half of modulation period. According to the symmetry analysis, such a coupler supports two electromagnetic modes with exactly matched slow or fast group velocities but different phase velocities for frequencies close to the edge of the photonic band. We confirm the predicted properties of the modes by directly extracting their dispersion and group velocities from the near-field measurements using specialized Bloch-wave spectral analysis method.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation
84.40.Az Waveguides, transmission lines, striplines

Carrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wells

M. Baranowski, M. Syperek, R. Kudrawiec, J. Misiewicz, J. A. Gupta, X. Wu, and R. Wang

Appl. Phys. Lett. 98, 061910 (2011); http://dx.doi.org/10.1063/1.3548544 (3 pages) | Cited 1 time

Online Publication Date: 10 February 2011

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The carrier dynamics in type-II GaAsSb/GaAs quantum well (QW) is investigated by time-resolved photoluminescence at low temperature. A detailed analysis of the experimental data reveal a complex carrier relaxation scenario involving both delocalized and localized states. We show that the QW emission is controlled by the dynamics of the band bending effect, related to temporal changes in the spatial charge separation near the GaAsSb/GaAs heterointerface, whereas localized states play a significant role in the carrier relaxation/redistribution between QW states.
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73.21.Fg Quantum wells
78.47.jd Time resolved luminescence
78.55.Cr III-V semiconductors
78.67.De Quantum wells

InGaN/GaN quantum wells on self-organized faceted GaN islands: Growth and luminescence studies

Z. L. Fang, Y. X. Lin, and J. Y. Kang

Appl. Phys. Lett. 98, 061911 (2011); http://dx.doi.org/10.1063/1.3554421 (3 pages) | Cited 4 times

Online Publication Date: 11 February 2011

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The growth behavior and luminescence properties of InGaN/GaN quantum wells (QW) on in situ self-organized GaN islands of various distinct smooth sidewall faceting are simultaneously investigated and directly compared. The QW thickness is found to be specific polar angle dependent, leading to variations in QW thickness on multifaceting islands. As a result, by color tuning through island shaping and modifications of the InGaN/GaN QWs on the faceted islands, polychromatic emissions are achieved.
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81.07.St Quantum wells
78.67.De Quantum wells
78.60.Hk Cathodoluminescence, ionoluminescence
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Realization of optimal bandgaps in solid-solid, solid-air, and hybrid solid-air-solid phononic crystal slabs

Charles M. Reinke, M. F. Su, R. H. Olsson, III, and I. El-Kady

Appl. Phys. Lett. 98, 061912 (2011); http://dx.doi.org/10.1063/1.3543848 (3 pages) | Cited 5 times

Online Publication Date: 11 February 2011

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We investigate the optimal conditions for bandgap formation in square-lattice phononic crystal (PnC) slabs composed of a solid matrix with solid or air inclusions. To ensure sufficient impedance mismatch (key for bandgap formation) and fabrication amenability, silicon and silica were chosen as candidate matrix materials with either air or tungsten inclusions. Solid-solid PnCs were found to exhibit larger bandgaps while relaxing the topological constraints as compared to solid-air PnCs for all but the largest filling fractions. We also demonstrate a hybridized lattice incorporating both air and solid inclusions in the matrix that further relaxes the constraints for realizing wide bandgaps.
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63.20.dd Measurements
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