Effect of edge threading dislocations on the electronic structure of InN

Kalesaki, E.; Kioseoglou, J.; Lymperakis, L.; Komninou, Ph.; Karakostas, Th.

doi:doi:10.1063/1.3553772

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Electron band alignment at the interface of (100)GaSb with molecular-beam deposited Al₂O₃

From internal photoemission and photoconductivity measurements at the (100)GaSb/Al2O3 interface, the semiconductor valence band is found to be 3.05±0.10 eV below the oxide conduction band. This band alignment corresponds to conduction and valence band offsets of 2.3±0.10 and 3.05±0.15 eV, respectively. These results indicate that the valence band in GaSb lies energetically well above the valence band in InxGa1−xAs (0 ≤ x ≤ 0.53) or InP, suggesting the possibility of fabrication of hole quantum-...

Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency

The correlation of integrated microcathodoluminescence efficiency with crystalline quality and deep trap density of nonpolar GaN films grown by metal organic chemical vapor deposition on semi-insulating 6H-m-SiC or r-sapphire is analyzed. The results suggest a strong influence of nonradiative recombination centers whose concentration decreases with decreased density of extended defects. Electron traps with energy levels at Ec−0.6 eV and which pin the Fermi level in films with high defect densit...

The open issue of the n-type conductivity and its correlation to threading dislocations (TDs) in InN is addressed through first principles calculations on the electronic properties of a-edge TDs. All possible dislocation core models are considered (4-, 5/7-, and 8-atom cores) and are found to modify the band structure of InN in a distinct manner. In particular, nitrogen and indium low coordinated atoms in the eight-atom core induce states near the valence band maximum and above the conduction band minimum, respectively. The formation of a nitrogen–nitrogen “wrong” bond is observed at the 5/7-atom core resulting in a state inside the band gap. The 4- and 5/7-atom cores induce occupied states resonant in the conduction band due to In–In strain induced interactions and wrong bonds, respectively. These occupied states designate TDs as a source of higher electron concentrations in InN and provide direct evidence that TDs contribute to its inherent n-type conductivity.

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KEYWORDS and PACS

Keywords

ab initio calculations, conduction bands, core levels, defect states, density functional theory, edge dislocations, electronic structure, energy gap, III-V semiconductors, indium compounds, valence bands, wide band gap semiconductors

PACS

71.55.Eq

III-V semiconductors
61.72.Lk

Linear defects: dislocations, disclinations
71.15.Mb

Density functional theory, local density approximation, gradient and other corrections
61.72.Hh

Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
71.20.Nr

Semiconductor compounds

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http://dx.doi.org/10.1063/1.3553772

PUBLICATION DATA

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0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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