APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

14 Feb 2011

Volume 98, Issue 7, Articles (07xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 98, 073101 (2011); http://dx.doi.org/10.1063/1.3554360 (3 pages)

Wei Xu, Rajesh Leeladhar, Yao-Tsan Tsai, Eui-Hyeok Yang, and Chang-Hwan Choi
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Subwavelength imaging in a cylindrical hyperlens based on S-string resonators

Weibin Zhang (张维滨), Hongsheng Chen (陈红胜), and Herbert O. Moser

Appl. Phys. Lett. 98, 073501 (2011); http://dx.doi.org/10.1063/1.3555339 (3 pages) | Cited 2 times

Online Publication Date: 14 February 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Previous cylindrical hyperlenses were realized with metamaterial with only one component of the constitutive parameters negative. In this letter, we show that metamaterials with different combinations of negative and positive constitutive parameters can also be used to realize hyperlenses. The metamaterial forming the cylindrical hyperlens is based on the S-string architecture, which shows two components of the constitutive parameters negative, i.e., μϕ<0 and εz<0. Both simulation and experimental studies of the cylindrical hyperlens show that a spatial resolution of about 1/10 of the vacuum wavelength can be obtained.
Show PACS
42.79.Bh Lenses, prisms and mirrors
07.60.-j Optical instruments and equipment
81.05.Xj Metamaterials for chiral, bianisotropic and other complex media

A pure single-walled carbon nanotube thin film based three-terminal microelectromechanical switch

Min-Woo Jang, Chia-Ling Chen, Walter E. Partlo, III, Shruti R. Patil, Dongjin Lee, Zhijang Ye, David Lilja, T. Andrew Taton, Tianhong Cui, and Stephen A. Campbell

Appl. Phys. Lett. 98, 073502 (2011); http://dx.doi.org/10.1063/1.3553227 (3 pages) | Cited 2 times

Online Publication Date: 15 February 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The electrical and physical properties of pure single-walled carbon nanotube thin films deposited through a layer-by-layer-self-assembly process are discussed. The film thickness was proportional to the number of dipping cycles. The film resistivity was estimated as 2.19×10−3 Ω cm after thermal treatment processes were performed. The estimated specific contact resistance to gold electrodes was 6.33×10−9 Ω m2 from contact chain measurements. The fabricated three-terminal microelectromechanical switch using these films functioned as a beam for multiple switching cycles with a 4.5 V pull-in voltage. This switch is believed to be a promising device for low power digital logic applications.
Show PACS
81.07.De Nanotubes
81.16.Dn Self-assembly
85.35.Kt Nanotube devices
73.40.Cg Contact resistance, contact potential

Photo and thermal stability enhancement of amorphous Hf–In–Zn–O thin-film transistors by the modulation of back channel composition

W. J. Maeng, Joon Seok Park, Hyun-Suk Kim, Kwang-Hee Lee, Kyung Bae Park, Kyoung Seok Son, Tae Sang Kim, Eok Su Kim, Yong Nam Ham, Myungkwan Ryu, and Sang Yoon Lee

Appl. Phys. Lett. 98, 073503 (2011); http://dx.doi.org/10.1063/1.3555446 (3 pages) | Cited 5 times

Online Publication Date: 16 February 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The sensitivity and stability of amorphous Hf–In–Zn–O thin-film transistors with respect to visible light radiation and thermal annealing were studied. The photo and thermal stability of the devices were significantly improved by the application of a double active layer that consists of a low conductivity back channel with reduced indium content. From this double layer, significantly lower shifts in Vturn on upon illumination and thermal annealing could be achieved. However, no degradation in the field-effect mobility and reliability of the devices was observed.
Show PACS
85.30.Tv Field effect devices
81.40.Gh Other heat and thermomechanical treatments
68.60.Dv Thermal stability; thermal effects

An intermediate-band-assisted avalanche multiplication in InAs/InGaAs quantum dots-in-well infrared photodetector

L. Lin, H. L. Zhen, X. H. Zhou, N. Li, W. Lu, and F. Q. Liu

Appl. Phys. Lett. 98, 073504 (2011); http://dx.doi.org/10.1063/1.3554758 (3 pages)

Online Publication Date: 18 February 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The avalanche multiplication of photocurrent in InAs/InGaAs quantum dot infrared photodetectors (QDIPs) has been observed in the temperature range from 20 to 80 K. The avalanche onset voltage Vth, being larger than 1.2 V at T<55 K, is reduced to less than 0.8 V at T>60 K. This singularity of Vth indicates that intermediate-band-assisted avalanche multiplication is achieved in our dots-in-well structure, which benefits from the abrupt change of the electron occupation of the intermediate band at a temperature of approximately 55 K. The remarkable reduction of Vth for QDIP is a useful enhancement in the infrared detector’s performance.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.30.-z Semiconductor devices

Turn-key module for neutron scattering with sub-micro-eV resolution

R. Georgii, G. Brandl, N. Arend, W. Häußler, A. Tischendorf, C. Pfleiderer, P. Böni, and J. Lal

Appl. Phys. Lett. 98, 073505 (2011); http://dx.doi.org/10.1063/1.3556558 (3 pages) | Cited 7 times

Online Publication Date: 18 February 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the development of a compact turn-key module that boosts the resolution in quasielastic neutron scattering by several orders of magnitude down to the low sub-micro-eV range. It is based on a pair of neutron resonance spin flippers that generate a well defined temporal intensity modulation, also known as Modulation of IntEnsity by Zero Effort (MIEZE). The module may be used under versatile conditions, in particular, in applied magnetic fields and for depolarizing and incoherently scattering samples. We demonstrate the power of MIEZE in studies of the helimagnetic order in MnSi under applied magnetic fields.
Show PACS
75.30.Cr Saturation moments and magnetic susceptibilities
75.50.Ee Antiferromagnetics

Gate capacitance of cylindrical nanowires with elliptical cross-sections

Amlan Majumdar and Chung-Hsun Lin

Appl. Phys. Lett. 98, 073506 (2011); http://dx.doi.org/10.1063/1.3555468 (3 pages) | Cited 1 time

Online Publication Date: 18 February 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We investigate gate capacitance of cylindrical nanowires with elliptical cross-sections because most fabricated Si nanowires have elliptical cross-sections. We derive an exact result for the capacitance of confocal elliptical capacitors and an approximate expression for the capacitance of conformal elliptical capacitors. Using numerical simulations for conformal elliptical capacitors, we show that the analytical results for the confocal and conformal elliptical capacitors are within 5% of the numerical values for eccentricity <0.85. We also provide correction factors to the analytical results that match the numerical conformal elliptical capacitances to within 5% for all values of eccentricity.
Show PACS
84.32.Tt Capacitors
81.07.Gf Nanowires
81.16.-c Methods of micro- and nanofabrication and processing
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close