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21 Feb 2011

Volume 98, Issue 8, Articles (08xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 98, 081101 (2011); http://dx.doi.org/10.1063/1.3555489 (3 pages)

B. Cluzel, K. Foubert, L. Lalouat, J. Dellinger, D. Peyrade, E. Picard, E. Hadji, and F. de Fornel
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Retreat behavior of a charged droplet for electrohydrodynamic inkjet printing

Hadi Teguh Yudistira, Vu Dat Nguyen, Si Bui Quang Tran, Tae Sam Kang, Jung Keun Park, and Doyoung Byun

Appl. Phys. Lett. 98, 083501 (2011); http://dx.doi.org/10.1063/1.3555346 (3 pages) | Cited 1 time

Online Publication Date: 23 February 2011

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The charged droplet retreat phenomenon in electrohydrodynamic inkjet printing is experimentally observed and theoretically explained. If the charge concentration of a droplet generated from a nozzle is high enough, Coulomb fission is generated a second time and the main droplet retreats to the meniscus on the nozzle. The retreat phenomenon is due to interactions between the charged droplet, the meniscus, and charges on the substrate. The Rayleigh limit is used to give a theoretical estimate of the amount of charge on the droplet and the meniscus during the retreat.
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47.85.-g Applied fluid mechanics
47.60.Kz Flows and jets through nozzles
47.65.-d Magnetohydrodynamics and electrohydrodynamics
47.55.D- Drops and bubbles

Modulation doping of graphene: An approach toward manufacturable devices

Gong Gu and Zhijian Xie

Appl. Phys. Lett. 98, 083502 (2011); http://dx.doi.org/10.1063/1.3556587 (3 pages) | Cited 1 time

Online Publication Date: 25 February 2011

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Stable, controlled, and patternable doping is the cornerstone of the microelectronics industry, and will be necessary for the next generation semiconductors. The lack of a suitable doping scheme is among the challenges that graphene faces as a candidate future electronic material. Here, we explore the use of modulation doping, where charge carriers are transferred from a doped wider band gap material to an undoped narrower band gap one, to achieve stable, controlled, and patternable doping of graphene in a complementary metal-oxide-semiconductor (CMOS) compatible structure. Numerical calculation shows that such devices exhibit CMOS-like characteristics.
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61.72.up Other materials

An electrically tunable focusing liquid crystal lens with a built-in planar polymeric lens

Hung-Chun Lin and Yi-Hsin Lin

Appl. Phys. Lett. 98, 083503 (2011); http://dx.doi.org/10.1063/1.3559622 (3 pages) | Cited 9 times

Online Publication Date: 25 February 2011

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An electrically tunable focusing liquid crystal (LC) lens with a built-in planar polymeric lens with a short focal length ( ∼ 4.41 to 8.82 cm) is demonstrated. The focal length of the LC lens is contributed by two parts: one is the LC layer and the other is planar polymeric layer. In the image system, the object can be continuously imaged by the LC lens when the object is at the objective distance from 360 to 17 cm as the voltage is switched from 0 to 35 Vrms. The image performance is also demonstrated. The applications are cell phones, and cameras
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42.70.Df Liquid crystals
42.79.Bh Lenses, prisms and mirrors
42.70.Jk Polymers and organics

Study of automatic recovery on the metal nanocrystal-based Al2O3/SiO2 gate stack

Y. N. Chen, K. L. Pey, K. E. J. Goh, Z. Z. Lwin, P. Singh, and S. Mahapatra

Appl. Phys. Lett. 98, 083504 (2011); http://dx.doi.org/10.1063/1.3556641 (3 pages)

Online Publication Date: 25 February 2011

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Automatic recovery of leakage current to its prestress condition was observed after soft breakdown on Ru metal nanocrystal-based Al2O3/SiO2 gate stack. We propose that the high current density induced upon breakdown causes considerable Joule heating in the breakdown percolation path. This increases the probability of detrapping and thermal diffusion of the oxygen ions which passivates the oxygen vacancies in the percolation path. This recovery mechanism is supported by studies on leakage current and dielectric relaxation current at elevated temperatures. We discuss the significance of our findings in the lights of enhancing the reliability margin of metal nanocrystal-based nonvolatile memory.
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73.63.Bd Nanocrystalline materials
77.22.Jp Dielectric breakdown and space-charge effects
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.jd Vacancies
77.22.Gm Dielectric loss and relaxation
66.30.Xj Thermal diffusivity

Asymmetric acoustic gratings

Zhaojian He, Shasha Peng, Yangtao Ye, Zhongwei Dai, Chunyin Qiu, Manzhu Ke, and Zhengyou Liu

Appl. Phys. Lett. 98, 083505 (2011); http://dx.doi.org/10.1063/1.3562306 (3 pages) | Cited 10 times

Online Publication Date: 25 February 2011

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The unidirectional transmission of acoustic waves is realized by a simple geometrically asymmetric steel grating structure. This exotic phenomenon stems from the one-way diffraction effect induced by the different periods of the slits on the both surfaces of the sample. And the frequency range of unidirectional transmission is simply determined by the structure periods. The experimental results agree well with the theoretical simulation. This remarkable effect is expected potential applications in ultrasonic devices, such as acoustic rectifiers and acoustic diodes.
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43.40.At Experimental and theoretical studies of vibrating systems
43.30.Ky Structures and materials for absorbing sound in water; propagation in fluid-filled permeable material
43.35.Pt Surface waves in solids and liquids

Ruthenium based metals using atomic vapor deposition for gate electrode applications

Changhwan Choi, Takashi Ando, and Vijay Narayanan

Appl. Phys. Lett. 98, 083506 (2011); http://dx.doi.org/10.1063/1.3559929 (3 pages) | Cited 2 times

Online Publication Date: 25 February 2011

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The impacts of ruthenium-based metal gate electrodes (Ru,RuOx,RuSiOx) with atomic vapor deposition (AVD) on flatband voltage (VFB) and equivalent oxide thickness (EOT) are demonstrated using a low temperature (<400 °C) process. Increasing thickness of Ru and RuOx exhibits higher VFB, attributed to filling oxygen vacancies [Vo] in high-k gate dielectric with oxygen supplied from AVD metal gate electrodes upon annealing. Ru is efficient to attain a higher work-function and thinner EOT compared to RuOx and RuSiOx. Subsequent physical-vapor-deposition (PVD) TiN capping on AVD metals blocks oxygen out-diffusion, leading to higher VFB than PVD W or AVD TiN capping.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.30.+y Surface double layers, Schottky barriers, and work functions
61.72.jd Vacancies
65.40.gh Work functions
81.40.Gh Other heat and thermomechanical treatments
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