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21 Feb 2011

Volume 98, Issue 8, Articles (08xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 98, 081101 (2011); http://dx.doi.org/10.1063/1.3555489 (3 pages)

B. Cluzel, K. Foubert, L. Lalouat, J. Dellinger, D. Peyrade, E. Picard, E. Hadji, and F. de Fornel
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Electric-field-induced strain mechanisms in lead-free 94%(Bi1/2Na1/2)TiO3–6%BaTiO3

Hugh Simons, John Daniels, Wook Jo, Robert Dittmer, Andrew Studer, Maxim Avdeev, Jürgen Rödel, and Mark Hoffman

Appl. Phys. Lett. 98, 082901 (2011); http://dx.doi.org/10.1063/1.3557049 (3 pages) | Cited 18 times

Online Publication Date: 22 February 2011

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High resolution neutron diffraction has been used to investigate the structural origin of the large electric-field-induced remanent strain in 94(Bi1/2Na1/2)TiO3–6BaTiO3 ceramics. The virgin material was found to be a mixture of near-cubic phases with slight tetragonal and rhombohedral distortions of a0a0c+ and a−a−a− octahedral tilt type, respectively. Application of an electric field of 4.57 kV/mm transformed the sample to a predominantly rhombohedral a−a−a− modification with a significantly higher degree of structural distortion and a pronounced preferred orientation of the c-axis along the field direction. These electric field-induced structural effects contribute significantly to the macroscopic strain and polarization of this system.
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77.65.Ly Strain-induced piezoelectric fields
64.70.K- Solid-solid transitions

Multiferroicity in an orthorhombic YMnO3 single-crystal film

Masao Nakamura, Yusuke Tokunaga, Masashi Kawasaki, and Yoshinori Tokura

Appl. Phys. Lett. 98, 082902 (2011); http://dx.doi.org/10.1063/1.3555462 (3 pages) | Cited 2 times

Online Publication Date: 22 February 2011

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Perovskitelike RMnO3 (R: rare-earth) exhibits large magnetoelectric effects because of the intimate correlation between magnetic and ferroelectric orders. However, reproducing the multiferroic properties in thin films has been far from straightforward due to the difficulty in the growth of single-crystal films caused by the large orthorhombic distortion in RMnO3. We could overcome the problem and achieve the fabrication of a monodomain single-crystal film of orthorhombic YMnO3 by choosing (0 1 0)-YAlO3 as a substrate. The film showed a ferroelectric transition at 40 K with a saturation polarization of 0.8 μC/cm2. The ferroelectric polarization could be modified by magnetic fields, evidencing the multiferroic state in the film.
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75.85.+t Magnetoelectric effects, multiferroics
77.55.Nv Multiferroic/magnetoelectric films
77.22.Ej Polarization and depolarization
77.80.B- Phase transitions and Curie point

Defect states at III-V semiconductor oxide interfaces

L. Lin and J. Robertson

Appl. Phys. Lett. 98, 082903 (2011); http://dx.doi.org/10.1063/1.3556619 (3 pages) | Cited 26 times

Online Publication Date: 23 February 2011

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Models of insulating interfaces between (100)GaAs and HfO2, Gd2O3, and Al2O3 are constructed and used to host various interfacial defects to see which give rise to gap states. The antibonding state of As–As dimers is found to lie in the upper band gap and is identified as a possible major source of the interface gap states which cause Fermi level pinning in GaAs-oxide interfaces and field effect transistors.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
71.55.-i Impurity and defect levels
85.30.Tv Field effect devices
73.20.At Surface states, band structure, electron density of states

Structural and energetic origin of defects at the interface between germanium and a high-k dielectric from first principles

S. D. Elliott and J. C. Greer

Appl. Phys. Lett. 98, 082904 (2011); http://dx.doi.org/10.1063/1.3554703 (3 pages)

Online Publication Date: 23 February 2011

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Atomic-scale models of the abrupt high-k/Ge interface with a range of suboxide stoichiometries GeOx are presented and compared to their Si analogs. Molecular dynamics and geometry optimization were carried out at the density functional theory level to yield structures and energetics. Cohesion across the interface becomes stronger with increasing oxidation of the Ge suboxide. Three-coordinate Ge is identified as the main defect and is formed at low energetic cost, which accounts for the observed abundance of defects at oxide/Ge interfaces. The optimum low temperature interface is defect-free, predominantly Ge2+ with some Ge+.
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68.35.Ct Interface structure and roughness
71.55.-i Impurity and defect levels

Wide temperature polyimide/ZrO2 nanodielectric capacitor film with excellent electrical performance

C. Zou, D. Kushner, and S. Zhang

Appl. Phys. Lett. 98, 082905 (2011); http://dx.doi.org/10.1063/1.3559623 (3 pages) | Cited 1 time

Online Publication Date: 25 February 2011

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In this letter, wide temperature dielectric properties and corona resistance of Upilex-S® polyimide (PI) films filled with Zirconium dioxide (ZrO2) nanoparticles were investigated. ZrO2/PI nanodielectrics exhibited the stable dielectric properties, high energy density and high charge-discharge efficiency below 300 °C. Testing of corona resistance showed even a small amount of nanofillers can improve the lifetime of PI significantly. Scanning electron microscopy with x-ray microanalysis (SEM-EDS) analysis suggested the higher thermal conductivity and evaporation of ZrO2 nanoparticles may induce this improvement. These high performance features make polyimide nanocomposites attractive for high energy density capacitor applications at high temperature.
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77.55.-g Dielectric thin films
77.84.Lf Composite materials
77.22.Ch Permittivity (dielectric function)
84.32.Tt Capacitors
66.70.Lm Other systems such as ionic crystals, molecular crystals, nanotubes, etc.

Effects of rapid thermal annealing on structure and electrical properties of Gd-doped HfO2 high k film

Yuhua Xiong, Hailing Tu, Jun Du, Xinqiang Zhang, Dapeng Chen, and Wenwu Wang

Appl. Phys. Lett. 98, 082906 (2011); http://dx.doi.org/10.1063/1.3556652 (3 pages) | Cited 3 times

Online Publication Date: 25 February 2011

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Effects of rapid thermal annealing (RTA) at 950 °C for 5 s in N2 on structure and electrical properties of Gd-doped HfO2 film deposited on Si(100) substrates have been studied. RTA causes partial crystallization of Gd-doped HfO2 film and slight reduction in band gap. Silicide appears in the interfacial layer and thickness of interface layer increases. Keeping Gd-doped HfO2 films at about 3 nm, the leakage current density is 3.81×10−5 A/cm2 at 1 V gate voltage without RTA while that is 8.50×10−2 A/cm2 with RTA. The permittivities are ∼ 14.8 and ∼ 17.9 and the capacitance equivalent thicknesses are 1.6 nm and 1.1 nm for the samples with and without RTA, respectively.
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77.55.-g Dielectric thin films
81.40.Gh Other heat and thermomechanical treatments
71.20.Ps Other inorganic compounds
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