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21 Feb 2011

Volume 98, Issue 8, Articles (08xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 98, 081101 (2011); http://dx.doi.org/10.1063/1.3555489 (3 pages)

B. Cluzel, K. Foubert, L. Lalouat, J. Dellinger, D. Peyrade, E. Picard, E. Hadji, and F. de Fornel
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Morphology dependent electron transport in an n-type electron accepting small molecule for solar cell applications

Karsten B. Krueger, Paul E. Schwenn, Ke Gui, Almantas Pivrikas, Paul Meredith, and Paul L. Burn

Appl. Phys. Lett. 98, 083301 (2011); http://dx.doi.org/10.1063/1.3556280 (3 pages)

Online Publication Date: 22 February 2011

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We report on the charge transport properties of a simple solution processable small-molecule electron acceptor, 2-[{7-(9,9-di-n-propyl-9H-fluoren-2-yl)benzo[c][1,2,5]thiadiazol-4-yl}methylene]malononitrile (K12), designed for use in bulk-heterojunction organic photovoltaic cells. It was found that the molecular order in as-cast films can be dramatically improved by annealing at moderate temperatures (60 °C), which leads to a greatly enhanced electron mobility. Using the photoinduced charge extraction in linearly increasing voltage technique we measured bulk electron mobilities to be as high as 10−4 cm2 V−1 s−1, comparable with some of the best nonfullerene acceptor materials reported to date.
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88.40.jr Organic photovoltaics
81.40.Gh Other heat and thermomechanical treatments
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Efficient up-conversion of triplet excitons into a singlet state and its application for organic light emitting diodes

Ayataka Endo, Keigo Sato, Kazuaki Yoshimura, Takahiro Kai, Atsushi Kawada, Hiroshi Miyazaki, and Chihaya Adachi

Appl. Phys. Lett. 98, 083302 (2011); http://dx.doi.org/10.1063/1.3558906 (3 pages) | Cited 25 times

Online Publication Date: 24 February 2011

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A material possessing a very small energy gap between its singlet and triplet excited states, ΔE1−3, which allows efficient up-conversion of triplet excitons into a singlet state and leads to efficient thermally activated delayed fluorescence (TADF), is reported. The compound, 2-biphenyl-4,6-bis(12-phenylindolo[2,3-a] carbazole-11-yl)-1,3,5-triazine, breaks the restriction of a large energy gap, with a ΔE1−3 of just 0.11 eV, while maintaining a high fluorescent radiative decay rate (kr ∼ 107). The intense TADF provides a pathway for highly efficient electroluminescence.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
71.35.-y Excitons and related phenomena
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Electron structure and dynamics at poly(3-hexylthiophene)/fullerene photovoltaic heterojunctions

Zi Li, Xu Zhang, and Gang Lu

Appl. Phys. Lett. 98, 083303 (2011); http://dx.doi.org/10.1063/1.3559617 (3 pages) | Cited 3 times

Online Publication Date: 25 February 2011

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The interfacial electronic structure and dynamics of poly(3-hexylthiophene)/fullerene (C60 and [6,6]-phenyl-C61-butyric acid methyl ester) heterojunctions are studied by ab initio nonadiabatic molecular dynamics. These junctions render ultrafast electron transfer with a time-scale of ∼ 70 fs and the adiabatic electron transfer is the dominant process. The backward electron transfer, however, is much longer, in a time-scale of nanoseconds. The overall electron transfer is determined by the energy evolution driven by the coupled electron-ion dynamics.
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73.40.-c Electronic transport in interface structures
72.40.+w Photoconduction and photovoltaic effects
71.15.Pd Molecular dynamics calculations (Car-Parrinello) and other numerical simulations
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Improvement of voltage and charge balance in inverted top-emitting organic electroluminescent diodes comprising doped transport layers by thermal annealing

Michael Thomschke, Simone Hofmann, Selina Olthof, Merve Anderson, Hans Kleemann, Matthias Schober, Björn Lüssem, and Karl Leo

Appl. Phys. Lett. 98, 083304 (2011); http://dx.doi.org/10.1063/1.3559847 (3 pages) | Cited 12 times

Online Publication Date: 25 February 2011

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We present investigations of top emitting organic light emitting devices (OLED) comprising n- and p-doped organic charge transport layers. It has been found previously that in comparison to noninverted p-i-n OLEDs, inverted n-i-p OLEDs show reduced device performances after fabrication. These differences can be eliminated by subsequent thermal annealing of the whole n-i-p OLED. After this process, the n-i-p OLED exhibits a superior low driving voltage of 2.9 V at 1000 cd/m2 and shows an increase in external quantum efficiency from 11% to almost 15% which we ascribe to a modified charge balance within the intrinsic organic emission layer.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
81.40.Gh Other heat and thermomechanical treatments
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