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28 Feb 2011

Volume 98, Issue 9, Articles (09xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 98, 093502 (2011); http://dx.doi.org/10.1063/1.3531756 (3 pages)

Marina S. Leite, Robyn L. Woo, William D. Hong, Daniel C. Law, and Harry A. Atwater
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Self-assembled hexagonal double fishnets as negative index materials

Kristof Lodewijks, Niels Verellen, Willem Van Roy, Victor Moshchalkov, Gustaaf Borghs, and Pol Van Dorpe

Appl. Phys. Lett. 98, 091101 (2011); http://dx.doi.org/10.1063/1.3560444 (3 pages) | Cited 6 times

Online Publication Date: 28 February 2011

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We show experimentally the use of nanosphere lithography for fabricating negative index metamaterials in the near-infrared wavelength range. We investigated a specific implementation of the widely studied double fishnet metamaterials, consisting of a gold-silica-gold layer stack perforated by a hexagonal array of round holes. Tuning of the hole diameter allows to tailor these self-assembled materials as single- or double negative metamaterials.
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42.70.-a Optical materials
42.25.-p Wave optics
42.79.-e Optical elements, devices, and systems
42.82.Cr Fabrication techniques; lithography, pattern transfer

Magnetic field tuning of a quantum dot strongly coupled to a photonic crystal cavity

Hyochul Kim, Thomas C. Shen, Deepak Sridharan, Glenn S. Solomon, and Edo Waks

Appl. Phys. Lett. 98, 091102 (2011); http://dx.doi.org/10.1063/1.3562344 (3 pages) | Cited 3 times

Online Publication Date: 1 March 2011

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We apply magnetic fields of up to 7 T to an indium arsenide quantum dot (QD) strongly coupled to a photonic crystal cavity. The field lifts the degeneracy of QD exciton spin states, and tune their emission energy by a combination of diamagnetic and Zeeman energy shifts. We use magnetic field tuning to shift the energies of the two exciton spin states to be selectively on resonance with the cavity. Strong coupling between the cavity and both states is observed. Magnetic field tuning enables energy shifts as large as 0.83 meV without significant degradation of the QD-cavity coupling strength.
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78.20.Ls Magneto-optical effects
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
71.35.-y Excitons and related phenomena
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
73.21.La Quantum dots
78.67.Hc Quantum dots

Experimental demonstration of efficient pulsed terahertz emission from a stacked GaAs/AlGaAs p-i-n-i heterostructure

A. Lisauskas, A. Reklaitis, R. Venckevičius, I. Kašalynas, G. Valušis, G. Grigaliūnaitė–Vonsevičienė, H. Maestre, J. Schmidt, V. Blank, M. D. Thomson, H. G. Roskos, and K. Köhler

Appl. Phys. Lett. 98, 091103 (2011); http://dx.doi.org/10.1063/1.3561642 (3 pages) | Cited 2 times

Online Publication Date: 2 March 2011

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The pulsed optoelectronic terahertz emitter based on a δ-doped p-i-n-i GaAs/AlxGa1−xAs heterostructure, which was suggested by Reklaitis [ Phys. Rev. B 77, 153309 (2008)] , is investigated experimentally. It is shown that the heterostructure can serve as efficient antenna- and bias-free surface emitter. Its power exceeds the emission from InGaAs and InAs surfaces for optical excitation fluences below 0.7 μJ/cm2 at 82 MHz pulse repetition rate, respectively, 7 μJ/cm2 at 1 kHz, with potential for further improvement by carrier recombination management.
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78.70.Gq Microwave and radio-frequency interactions
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Hollow waveguides with low intrinsic photoluminescence fabricated with Ta2O5 and SiO2 films

Y. Zhao, M. Jenkins, P. Measor, K. Leake, S. Liu, H. Schmidt, and A. R. Hawkins

Appl. Phys. Lett. 98, 091104 (2011); http://dx.doi.org/10.1063/1.3561749 (3 pages) | Cited 2 times

Online Publication Date: 2 March 2011

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A type of integrated hollow core waveguide with low intrinsic photoluminescence fabricated with Ta2O5 and SiO2 films is demonstrated. Hollow core waveguides made with a combination of plasma-enhanced chemical vapor deposition SiO2 and sputtered Ta2O5 provide a nearly optimal structure for optofluidic biofluorescence measurements with low optical loss, high fabrication yield, and low background photoluminescence. Compared to earlier structures made using Si3N4, the photoluminescence background of Ta2O5 based hollow core waveguides is decreased by a factor of 10 and the signal-to-noise ratio for fluorescent nanobead detection is improved by a factor of 12.
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78.66.Nk Insulators
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.55.Hx Other solid inorganic materials
68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
81.16.-c Methods of micro- and nanofabrication and processing

Influence of the growth temperature on the performances of strain-balanced quantum cascade lasers

A. Bismuto, R. Terazzi, M. Beck, and Jerome Faist

Appl. Phys. Lett. 98, 091105 (2011); http://dx.doi.org/10.1063/1.3561754 (3 pages) | Cited 11 times

Online Publication Date: 2 March 2011

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The effect of substrate temperature, during epitaxial growth, on the performances of strain-balanced quantum cascade lasers based on a three quantum well active region and operating at λ ≈ 4.6 μm is presented. Based on a comparison with a density matrix model of these devices, the optimum performances obtained at a growth temperature of 515 °C, are interpreted as arising from a value of the interface roughness correlation length (Λ = 85 Å) close to the optimum one computed by the model (Λ = 100 Å).
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
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Single-cycle terahertz pulses with amplitudes exceeding 1 MV/cm generated by optical rectification in LiNbO3

H. Hirori, A. Doi, F. Blanchard, and K. Tanaka

Appl. Phys. Lett. 98, 091106 (2011); http://dx.doi.org/10.1063/1.3560062 (3 pages) | Cited 29 times

Online Publication Date: 2 March 2011

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Using the tilted-pump-pulse-front scheme, we generate single-cycle terahertz (THz) pulses by optical rectification of femtosecond laser pulses in LiNbO3. In our THz generation setup, the condition that the image of the grating coincides with the tilted-optical-pulse front is fulfilled to obtain optimal THz beam characteristics and pump-to-THz conversion efficiency. By using an uncooled microbolometer-array THz camera, it is found that the THz beam leaving the output face of the LN crystal can be regarded as a collimated rather than point source. The designed focusing geometry enables tight focus of the collimated THz beam with a spot size close to the diffraction limit, and the maximum THz electric field of 1.2 MV/cm is obtained.
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42.60.-v Laser optical systems: design and operation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Polarization and angle independent terahertz metamaterials with high Q-factors

Ibraheem A. I. Al-Naib, Christian Jansen, Norman Born, and Martin Koch

Appl. Phys. Lett. 98, 091107 (2011); http://dx.doi.org/10.1063/1.3562372 (3 pages) | Cited 10 times

Online Publication Date: 3 March 2011

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We propose polarization and angle insensitive metamaterials at terahertz frequencies consisting of two concentric ring resonators with interdigitated fingers placed between the rings. We experimentally demonstrate that the bandstop resonance remains unaffected by changes in both the incident angle and the polarization. Furthermore, high quality-factors of more than 16 are observed as Fano-like modes with small dipole moments are excited. We show that the sharpness of the resonance can be controlled by the number of interdigitated finger pairs. The structures exhibit pronounced normal phase dispersion near the resonance, which renders them attractive candidates for electromagnetic induced transparency and slow light applications.
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78.20.Ls Magneto-optical effects
75.30.Cr Saturation moments and magnetic susceptibilities

Effect of radial defect lines in the focalization of unitary polarization order light beams

A. Ambrosio and P. Maddalena

Appl. Phys. Lett. 98, 091108 (2011); http://dx.doi.org/10.1063/1.3562587 (3 pages) | Cited 2 times

Online Publication Date: 4 March 2011

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In this letter, we analyze the effect of the defect line of a θ-cell polarization converter on the focalization of a Gaussian laser beam by means of a high numerical aperture microscope objective. This liquid crystal device is frequently used to convert a linearly polarized laser beam into either a radially or azimuthally polarized beam. The line singularity, that defines the cell axis and characterizes these devices, leads to a π-shift on the light polarization in moving from one side of the cell to the other, with respect to the cell axis. The shift, although negligible for light filtering and polarization microscopy, can be crucial in applications where a strong longitudinal component of the focused field is needed, such as in aperturless near-field microscopy. In this work, light distribution simulations as well as experimental investigations of the fields at the focal plane are carried out.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Kr Display devices, liquid-crystal devices
07.60.Pb Conventional optical microscopes
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Charge fluctuations for particles on a surface exposed to plasma

T. E. Sheridan and A. Hayes

Appl. Phys. Lett. 98, 091501 (2011); http://dx.doi.org/10.1063/1.3560302 (3 pages) | Cited 2 times

Online Publication Date: 28 February 2011

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We develop a stochastic model for the charge fluctuations on a microscopic dust particle resting on a surface exposed to plasma. We find in steady state that the fluctuations are normally distributed with a standard deviation that is proportional to (CTe)1/2, where C is the particle-surface capacitance and Te is the plasma electron temperature. The time for an initially uncharged ensemble of particles to reach the steady state distribution is directly proportional to CTe.
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52.25.Gj Fluctuation and chaos phenomena
52.27.Lw Dusty or complex plasmas; plasma crystals
52.25.Fi Transport properties

Low-temperature synthesis of large-area graphene-based transparent conductive films using surface wave plasma chemical vapor deposition

Jaeho Kim, Masatou Ishihara, Yoshinori Koga, Kazuo Tsugawa, Masataka Hasegawa, and Sumio Iijima

Appl. Phys. Lett. 98, 091502 (2011); http://dx.doi.org/10.1063/1.3561747 (3 pages) | Cited 27 times

Online Publication Date: 2 March 2011

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We present a low-temperature (300–400 °C), large-area (23 cm×20 cm) and efficient synthesis method for graphene-based transparent conductive films using surface wave plasma chemical vapor deposition. The films consist of few-layer graphene sheets. Their transparency and conductivity characteristics make them suitable for practical electrical and optoelectronic applications, which have been demonstrated by the proper operation of a touch panel fabricated using the films. The results confirm that our method could be suitable for the industrial mass production of macroscopic-scale graphene-based films.
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81.05.ue Graphene
85.60.Pg Display systems
78.67.Wj Optical properties of graphene
68.65.Pq Graphene films
68.65.Ac Multilayers
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Spectral and temporal behavior of an alkali metal plasma extreme ultraviolet source for surface morphology applications

Takeshi Higashiguchi, Mami Yamaguchi, Takamitsu Otsuka, Hiromitsu Terauchi, Noboru Yugami, Toyohiko Yatagai, Rebekah D’Arcy, Padraig Dunne, and Gerry O’Sullivan

Appl. Phys. Lett. 98, 091503 (2011); http://dx.doi.org/10.1063/1.3560304 (3 pages) | Cited 1 time

Online Publication Date: 2 March 2011

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We have characterized the emission spectrum and temporal history of a pure potassium plasma. Strong broadband emission was observed around 40 nm due to 3s−3p, 3p−3d, and 3d−4f transitions in ions ranging from K2+ to K4+ at a time-averaged electron temperature of about 12 eV. The temporal behavior of this emission strongly follows the recombination phase in the laser-produced plasma and it was reproduced by a hydrodynamic simulation of the potassium plasma which accounted for atomic processes.
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52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.50.Dg Plasma sources
52.65.-y Plasma simulation
52.38.Kd Laser-plasma acceleration of electrons and ions

The influence of hanging water droplets on discharge activity, application to high voltage insulators

A. Bojovschi, W. S. T. Rowe, and K. L. Wong

Appl. Phys. Lett. 98, 091504 (2011); http://dx.doi.org/10.1063/1.3559850 (3 pages) | Cited 2 times

Online Publication Date: 4 March 2011

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An investigation into the effect of hanging water droplets on a high voltage electrode is presented. This study is extended to a real life application of water droplets hanging on the sheds of high voltage ceramic insulators. The role of the water droplets on the partial discharge and flash over activity is considered. The results show that hanging droplets have a significant influence on corona discharges, which are visible between the sheds of insulators in a power network.
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84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
52.80.Hc Glow; corona
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High quality tensile-strained n-doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition

R. Jakomin, M. de Kersauson, M. El Kurdi, L. Largeau, O. Mauguin, G. Beaudoin, S. Sauvage, R. Ossikovski, G. Ndong, M. Chaigneau, I. Sagnes, and P. Boucaud

Appl. Phys. Lett. 98, 091901 (2011); http://dx.doi.org/10.1063/1.3559231 (3 pages) | Cited 8 times

Online Publication Date: 28 February 2011

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We show that high quality tensile-strained n-doped germanium films can be obtained on InGaAs buffer layers using metal-organic chemical vapor deposition with isobutyl germane as germanium precursor. A tensile strain up to 0.5% is achieved, simultaneously measured by x-ray diffraction and Raman spectroscopy. The effect of tensile strain on band gap energy is directly observed by room temperature direct band gap photoluminescence.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.ag Semiconductors
78.30.Am Elemental semiconductors and insulators

Midinfrared surface plasmon sensor based on a substrateless metal mesh

O. Limaj, S. Lupi, F. Mattioli, R. Leoni, and M. Ortolani

Appl. Phys. Lett. 98, 091902 (2011); http://dx.doi.org/10.1063/1.3559616 (3 pages) | Cited 3 times

Online Publication Date: 28 February 2011

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A midinfrared mass sensor based on high quality factor surface plasmon modes was designed, fabricated, and tested by infrared spectroscopy for the detection of nanometric layers of dielectric materials. Substrate removal below a metal mesh with period of 2 μm results in the coupling between degenerate surface plasmon modes on the two surfaces, resulting in a quality factor up to 33 for the antisymmetric mode. The presented substrateless metal mesh integrates mass sensing capability together with midinfrared spectroscopy, and is therefore of potential interest for substance-selective environmental and biomedical sensing applications
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Polarization-sensitive photoresponse of nanographite

Petr A. Obraztsov, Gennady M. Mikheev, Sergei V. Garnov, Alexander N. Obraztsov, and Yuri P. Svirko

Appl. Phys. Lett. 98, 091903 (2011); http://dx.doi.org/10.1063/1.3559928 (3 pages) | Cited 3 times

Online Publication Date: 28 February 2011

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We report on polarization-sensitive direct current photoresponse of nanographite films in a 532–4000 nm spectral range. It is found that irradiation of the nanographite by the nanosecond laser pulses produces the electric current with intensity depending on the incidence angle and polarization of the laser beam. The obtained dependencies of the photoresponse on wavelength and polarization of excitation laser beam are discussed in terms of the surface photogalvanic and photon drag effects.
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81.05.uf Graphite
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
72.40.+w Photoconduction and photovoltaic effects
73.50.Pz Photoconduction and photovoltaic effects

The hidden ingenuity in titin structure

Itamar Benichou and Sefi Givli

Appl. Phys. Lett. 98, 091904 (2011); http://dx.doi.org/10.1063/1.3558901 (3 pages) | Cited 2 times

Online Publication Date: 28 February 2011

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Titin is a giant protein that functions as a shock absorber in sarcomeres—the basic contractile unit of muscles. When stretched, thermal disturbances are expected to make titin follow the Maxwell path (global minimizer) of its energy. This path involves neither energy dissipation nor hysteresis. Therefore, a basic question is how does titin releases energy so efficiently? By adopting a simple mechanical model of a chain comprised from bistable elements, we show that dissipation depends on both system size and the height of the energy barrier separating equilibrium configurations. In this sense, titin is an optimal product of evolution.
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87.15.La Mechanical properties
87.15.B- Structure of biomolecules
87.14.E- Proteins
87.16.dm Mechanical properties and rheology
87.19.Ff Muscles

Influence of sample processing parameters on thermal boundary conductance value in an Al/AlN system

Christian Monachon, Mohamad Hojeij, and Ludger Weber

Appl. Phys. Lett. 98, 091905 (2011); http://dx.doi.org/10.1063/1.3560469 (3 pages) | Cited 1 time

Online Publication Date: 28 February 2011

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The influence of sample processing parameters on the thermal boundary conductance (TBC) between aluminum and aluminum nitride has been investigated by transient thermoreflectance. An evaporated Al layer on the polished substrate yielded a TBC at ambient of roughly 47 MW m−2 K−1. The largest improvement (by a factor of 5) was obtained by plasma-etching of the substrate and subsequent evaporation of the metal layer. Electron microscopy suggests that the differences in TBC were mainly due to the (partial) elimination of the native oxide layer on the substrate. The importance of an adequate model for data extraction on measured TBC is highlighted.
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78.66.Fd III-V semiconductors
78.20.N- Thermo-optic effects
78.66.Bz Metals and metallic alloys
81.65.Cf Surface cleaning, etching, patterning

Comprehensive insights into point defect and defect cluster formation in CuInSe2

Christiane Stephan, Susan Schorr, Michael Tovar, and Hans-Werner Schock

Appl. Phys. Lett. 98, 091906 (2011); http://dx.doi.org/10.1063/1.3559621 (3 pages) | Cited 7 times

Online Publication Date: 1 March 2011

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The concentration of native point defects in CuInSe2 powder material as a function of stoichiometry has been experimentally determined by neutron powder diffraction. A correlation between the Cu/In ratio and the density of VCu as well as InCu has been established and their concentrations are quantified. It is demonstrated, that assuming the spontaneous formation of defect pairs, the density of native point defects is reduced significantly by an order of magnitude. The functionality of a solar device, assuming same conditions like in the analyzed material, may be explained by a neutralization due to the formation of electrically inactive defect complexes.
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61.72.jd Vacancies
61.72.jj Interstitials
61.66.Fn Inorganic compounds
61.66.Bi Elemental solids
61.66.Dk Alloys

Theory of surface segregation in ternary semiconductor quantum dots

Sumeet C. Pandey, Georgios I. Sfyris, and Dimitrios Maroudas

Appl. Phys. Lett. 98, 091907 (2011); http://dx.doi.org/10.1063/1.3559939 (3 pages) | Cited 6 times

Online Publication Date: 1 March 2011

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We present a phenomenological species transport theory for surface segregation of constituent and dopant atoms in ternary semiconductor quantum dots. The theory employs continuum elasticity to describe species-surface interactions and is used to fit atomistic simulation results according to a first-principles-based force-field parameterization. The theory predicts equilibrium concentration profiles in the form of Maxwellian atmospheres near nanocrystal surfaces. The theory is accurate in the dilute limit and it is validated by fitting results of Monte Carlo simulations of compositional relaxation in InxGa1−xAs and ZnSe1−xTex nanocrystals for various representative sizes (diameters ≤ 5.7 nm) and compositions (x ≤ 0.2).
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68.35.Dv Composition, segregation; defects and impurities
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
81.07.Ta Quantum dots
81.07.Bc Nanocrystalline materials
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Probing the mechanical properties of graphene using a corrugated elastic substrate

Scott Scharfenberg, D. Z. Rocklin, Cesar Chialvo, Richard L. Weaver, Paul M. Goldbart, and Nadya Mason

Appl. Phys. Lett. 98, 091908 (2011); http://dx.doi.org/10.1063/1.3553228 (3 pages) | Cited 8 times

Online Publication Date: 1 March 2011

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We examine the mechanical properties of graphene samples of thicknesses ranging from 1 to 17 atomic layers, placed on a microscale-corrugated elastic substrate. Using atomic force microscopy, we show that the graphene adheres to the substrate surface and can substantially deform the substrate, with larger graphene thicknesses creating greater deformations. We use linear elasticity theory to model the deformations of the composite graphene-substrate system. We compare experiment and theory, and thereby extract information about graphene’s bending rigidity, adhesion, critical stress for interlayer sliding, and sample-dependent tension.
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81.05.ue Graphene
62.20.de Elastic moduli
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.F- Deformation and plasticity
62.20.D- Elasticity

First-principles study on migration mechanism in SrTiO3

Teruyasu Mizoguchi, Nobuaki Takahashi, and Hak-Sung Lee

Appl. Phys. Lett. 98, 091909 (2011); http://dx.doi.org/10.1063/1.3560464 (3 pages) | Cited 4 times

Online Publication Date: 1 March 2011

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The atomistic behavior of migration in SrTiO3 was investigated by first-principles nudged elastic band calculations. Calculated migration energies for Sr and oxygen are consistent with experimental values. In contrast, the calculated energy for Ti with a simple Ti-vacancy mechanism is far larger than the experimental value. In examining different Ti-migration mechanisms, the Ti-migration energy is found to decrease and become comparable to the Sr-migration energy by introducing a Sr vacancy. This Sr-vacancy-mediated Ti migration, which is consistent with the experimentally proposed mechanism by Gömann et al. [ Phys. Chem. Chem. Phys. 6, 3639 (2004) ], is confirmed theoretically by the present calculations.
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66.30.Lw Diffusion of other defects
61.72.jd Vacancies

Antiphase boundaries in Ba0.75Sr0.25TiO3 epitaxial film grown on (001) LaAlO3 substrate

Y. Q. Wang, W. S. Liang, Peter Kr. Petrov, and Neil McN. Alford

Appl. Phys. Lett. 98, 091910 (2011); http://dx.doi.org/10.1063/1.3562972 (3 pages)

Online Publication Date: 2 March 2011

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Ba0.75Sr0.25TiO3 film was epitaxially grown on a (001) LaAlO3 substrate using single-target pulsed laser deposition. The microstructure of the epitaxial film was investigated by conventional and high-resolution transmission electron microscopy. Apart from dislocations and stacking faults, two different kinds of antiphase boundaries, one being straight, and the other being zig-zagged, have been observed. The formation mechanism of these antiphase boundaries is discussed.
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77.55.fe BaTiO3-based films
77.80.-e Ferroelectricity and antiferroelectricity
61.72.Nn Stacking faults and other planar or extended defects
81.15.Fg Pulsed laser ablation deposition
81.16.Mk Laser-assisted deposition
68.55.aj Insulators

Losses in high quality quartz crystal resonators at cryogenic temperatures

Serge Galliou, Joël Imbaud, Maxim Goryachev, Roger Bourquin, and Philippe Abbé

Appl. Phys. Lett. 98, 091911 (2011); http://dx.doi.org/10.1063/1.3559611 (3 pages) | Cited 2 times

Online Publication Date: 3 March 2011

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Measurement of the mechanical losses of quartz crystal is a topic of interest for communities dealing with the gravitational wave detectors and also the time and frequency domain. About the latter, the authors describe Q-factor measurements of quartz crystal resonators at cryogenic temperatures under 10 K, thanks to a cryocooler-based experimental set-up. A Q-factor of 325 millions at 4 K, on the fifth overtone of the quasilongitudinal mode at 15.9 MHz, has been recorded. As shown, the acoustic wave trapping is suspected to limit the Landau–Rumer regime below 6 K [Landau and Rumer, Phys. Z. Sowjetunion 11, 18 (1937)] .
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.65.Fs Electromechanical resonance; quartz resonators
07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment
42.70.Ce Glasses, quartz

PbO-deficient PbTiO3: Mass transport, structural effects and possibility for intrinsic screening of the ferroelectric polarization

Sverre M. Selbach, Thomas Tybell, Mari-Ann Einarsrud, and Tor Grande

Appl. Phys. Lett. 98, 091912 (2011); http://dx.doi.org/10.1063/1.3555336 (3 pages) | Cited 2 times

Online Publication Date: 3 March 2011

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Intrinsic solid solubility in the form of cation nonstoichiometry has been studied in PbO-deficient bulk PbTiO3 prepared by solid-state reaction. The unit cell distortion, or tetragonality c/a, decreases with increasing concentration of Pb and O vacancies across the solid solubility range. Mass transport during solid-state reaction and sintering is sensitive to the nominal stoichiometry of the system: Excess PbO promotes grain growth and densification while excess TiO2 yields coarsening and swelling. These findings are discussed with respect to thin film growth and screening of the ferroelectric polarization by point defect concentration gradients at epitaxial interfaces.
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77.80.-e Ferroelectricity and antiferroelectricity
64.75.Bc Solubility
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.at Other materials
61.72.jd Vacancies

Abnormal temperature dependence of interband electronic transitions in relaxor-based ferroelectric (1−x)Pb(Mg1/3Nb2/3)O3−xPbTiO3 (x = 0.24 and 0.31) single crystals

J. J. Zhu (诸佳俊), W. W. Li (李文武), G. S. Xu (许桂生), K. Jiang (姜凯), Z. G. Hu (胡志高), M. Zhu (朱敏), and J. H. Chu (褚君浩)

Appl. Phys. Lett. 98, 091913 (2011); http://dx.doi.org/10.1063/1.3560342 (3 pages) | Cited 5 times

Online Publication Date: 3 March 2011

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The transmittance spectra of (1−x)Pb(Mg1/3Nb2/3)O3−xPbTiO3 (x = 0.24 and 0.31) single crystals have been studied in the temperature range of 5.3–300 K. It was found that the direct band gap Egd is 3.150±0.016 eV, indirect band gap Egi is 2.939±0.014 eV, and the phonon energy Ep is 0.098±0.014 eV for the PMN-0.24PT crystal at 300 K. With increasing the temperature, the Egd of the PMN-0.24PT crystal decreases from 3.263±0.017 to 3.150±0.016 eV while the Egd of the PMN-0.31PT crystal increases from 3.050±0.015 to 3.101±0.016 eV. The peculiar characteristic can be ascribed to the monoclinic and rhombohedral multiphase coexistence in the PMN-0.31PT crystal.
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77.80.B- Phase transitions and Curie point
63.20.-e Phonons in crystal lattices
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
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