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28 Feb 2011

Volume 98, Issue 9, Articles (09xxxx)

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Appl. Phys. Lett. 98, 093502 (2011); http://dx.doi.org/10.1063/1.3531756 (3 pages)

Marina S. Leite, Robyn L. Woo, William D. Hong, Daniel C. Law, and Harry A. Atwater
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Improving the on-current of In0.7Ga0.3As tunneling field-effect-transistors by p++/n+ tunneling junction

Han Zhao, Yen-Ting Chen, Yanzhen Wang, Fei Zhou, Fei Xue, and Jack C. Lee

Appl. Phys. Lett. 98, 093501 (2011); http://dx.doi.org/10.1063/1.3559607 (3 pages) | Cited 4 times

Online Publication Date: 28 February 2011

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We have compared the device performance of In0.7Ga0.3As HfO2 gate dielectric tunneling field-effect-transistors (TFETs) using p++/i or p++/n+ tunneling junctions. Devices with p++/n+ tunneling junctions show 61% and 20% higher current at Vg-Vth = 0.5 and 2 V compared to the ones with p++/i junctions. These p++/n+ TFETs exhibit an on-current of 60 μA/μm and a minimum subthreshold swing of 84 mV/dec. Device characteristics of TFETs using p++/n+ tunneling diodes with various n+ region doping concentrations have been simulated, results indicate the doping concentration of the n+ region plays an important role in determining the on-current and providing a well gate-controlled tunneling behavior.
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85.30.Tv Field effect devices
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.40.Ry Impurity doping, diffusion and ion implantation technology

Wide-band-gap InAlAs solar cell for an alternative multijunction approach

Marina S. Leite, Robyn L. Woo, William D. Hong, Daniel C. Law, and Harry A. Atwater

Appl. Phys. Lett. 98, 093502 (2011); http://dx.doi.org/10.1063/1.3531756 (3 pages) | Cited 5 times

Online Publication Date: 28 February 2011

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We have fabricated an In0.52Al0.48As solar cell lattice-matched to InP with efficiency higher than 14% and maximum external quantum efficiency equal to 81%. High quality, dislocation-free InxAl1−xAs alloyed layers were used to fabricate the single junction solar cell. Photoluminescence of InxAl1−xAs showed good material quality and lifetime of over 200 ps. A high band gap In0.35Al0.65As window was used to increase light absorption within the p-n absorber layer and improve cell efficiency, despite strain. The InAlAs top cell reported here is a key building block for an InP-based three junction high efficiency solar cell consisting of InAlAs/InGaAsP/InGaAs lattice-matched to the substrate.
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88.40.jp Multijunction solar cells
88.40.hj Efficiency and performance of solar cells

Concurrent nonvolatile resistance and capacitance switching in LaAlO3

S. X. Wu, H. Y. Peng, and T. Wu

Appl. Phys. Lett. 98, 093503 (2011); http://dx.doi.org/10.1063/1.3560257 (3 pages) | Cited 5 times

Online Publication Date: 28 February 2011

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We report on the correlated nonvolatile resistance and capacitance switching in Pt/LaAlO3/Nb:SrTiO3 heterostructures. The pristine devices show the typical characteristics of a Schottky junction; however, after forming, a reverse bias switches the device into a low resistance and high capacitance state while a forward bias drives it into a high resistance and low capacitance state. Our experiments suggest that both the formation of conducting filaments and the modulation of interface barrier contribute to the resistance switching. Oxygen vacancies play critical roles in determining the switching characteristics and can be controlled in the process of device fabrication.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
73.30.+y Surface double layers, Schottky barriers, and work functions
73.61.Ng Insulators
72.60.+g Mixed conductivity and conductivity transitions

Acoustic plate mode propagation and interaction with ultraviolet light in periodic AIN-on-sapphire structure

Venkata Chivukula, Daumantas Čiplys, Rakesh Jain, Jinwei Yang, Remis Gaska, and Michael Shur

Appl. Phys. Lett. 98, 093504 (2011); http://dx.doi.org/10.1063/1.3557507 (3 pages)

Online Publication Date: 28 February 2011

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AlN overlay featuring periodic columnar structure fabricated by epitaxial lateral overgrowth technique leads to excitation of acoustic plate modes (APMs) not observed in overlays without such periodic structure. The measured velocities of acoustic plate modes propagating in AlN-on-sapphire structure were verified by numerical simulation. The APM velocity is strongly modulated by UV illumination at wavelengths from 240 to 365 nm, and the corresponding phase response is sensitive to both the UV power and the wavelength with maximum sensitivity of 3.0 ppm/(μW/cm2) at 240 nm.
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68.35.Iv Acoustical properties
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
68.55.at Other materials

Dielectric charging in capacitive microelectromechanical system switches with silicon nitride

M. Koutsoureli, N. Tavassolian, G. Papaioannou, and J. Papapolymerou

Appl. Phys. Lett. 98, 093505 (2011); http://dx.doi.org/10.1063/1.3560465 (3 pages) | Cited 4 times

Online Publication Date: 1 March 2011

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The paper attempts to elaborate on the basic problem of dielectric charging in insulating films for microelectromechanical capacitive switches, the dependence of the film electrical properties on material stoichiometry and the uncertainty of whether the implementation of a leaky dielectric would reduce the charging effects. Silicon nitride films with stoichiometries (N/Si) ranging from 0.36 to 0.85 were assessed in metal-insulator-metal capacitors using the thermally stimulated depolarization current method and by obtaining the current-voltage characteristics. Capacitive switches were also fabricated with the same dielectric films. Results from both devices revealed an enhanced charging in the case of silicon-rich films.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
84.32.Tt Capacitors
77.55.F- High-permittivity capacitive films
07.10.Cm Micromechanical devices and systems
73.61.Ng Insulators
77.22.Ej Polarization and depolarization

Modeling of low-voltage oxide-based electric-double-layer thin-film transistors fabricated at room temperature

Mingzhi Dai, Guodong Wu, Yue Yang, Jie Jiang, Li Li, and Qing Wan

Appl. Phys. Lett. 98, 093506 (2011); http://dx.doi.org/10.1063/1.3555333 (3 pages) | Cited 6 times

Online Publication Date: 2 March 2011

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The room-temperature-made low-voltage electric-double-layer (EDL) thin-film transistors (TFTs) are reported previously with good performance including a huge EDL gate capacitance above 1 μF/cm2. We report a two-dimensional simulation of the carrier transport and subgap density of states (DOS) in low-voltage indium tin oxide EDL TFTs. The simple model with a constant mobility and two-step subgap DOS reproduces well the characteristics of EDL TFTs. A nice fitting to the experimental data was obtained with a changeable effective conduction band DOS and valence band DOS model, which is reasonable to EDL electrostatic modulation mechanism. The EDL TFTs show much lower DOS than the InGaZnO4 TFTs.
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85.30.Tv Field effect devices

Electrothermal simulation of superconducting nanowire avalanche photodetectors

Francesco Marsili, Faraz Najafi, Charles Herder, and Karl K. Berggren

Appl. Phys. Lett. 98, 093507 (2011); http://dx.doi.org/10.1063/1.3560458 (3 pages) | Cited 6 times

Online Publication Date: 2 March 2011

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We developed an electrothermal model of NbN superconducting nanowire avalanche photodetectors (SNAPs) on sapphire substrates. SNAPs are single-photon detectors consisting of the parallel connection of N superconducting nanowires. We extrapolated the physical constants of the model from experimental data and we simulated the time evolution of the device resistance, temperature and current by solving two coupled electrical and thermal differential equations describing the nanowires. The predictions of the model were in good quantitative agreement with the experimental results.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
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