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28 Feb 2011

Volume 98, Issue 9, Articles (09xxxx)

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Appl. Phys. Lett. 98, 093502 (2011); http://dx.doi.org/10.1063/1.3531756 (3 pages)

Marina S. Leite, Robyn L. Woo, William D. Hong, Daniel C. Law, and Harry A. Atwater
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Interlaced phase stepping in phase-contrast x-ray tomography

I. Zanette, M. Bech, F. Pfeiffer, and T. Weitkamp

Appl. Phys. Lett. 98, 094101 (2011); http://dx.doi.org/10.1063/1.3559849 (3 pages) | Cited 3 times

Online Publication Date: 28 February 2011

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We report on an interlaced acquisition scheme in grating-based x-ray phase-contrast tomography in which different viewing angles are used to retrieve a single differential phase projection. This interlaced acquisition scheme is particularly beneficial for region-of-interest tomography since it substantially reduces the artifacts caused by the external region and can eliminate the need for stop-and-go motion of the tomography rotation axis. In this letter, the higher accuracy of the region-of-interest phase reconstructions obtained with the interlaced approach is demonstrated by numerical simulation and experimental results.
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87.57.Q- Computed tomography
42.30.Wb Image reconstruction; tomography

Micro-nondestructive evaluation of microelectronics using three-dimensional acoustic imaging

Guang-Ming Zhang, David M. Harvey, and David R. Burton

Appl. Phys. Lett. 98, 094102 (2011); http://dx.doi.org/10.1063/1.3556646 (3 pages)

Online Publication Date: 28 February 2011

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Holographic-like three-dimensional (3D) acoustic imaging is developed for micro-nondestructive evaluation of microelectronics. It is implemented by stacking all the interface slices together to locate and identify hidden defects. Matching pursuit based acoustic time-frequency domain imaging is proposed to overcome the wavelength limit of axial resolution so that ultra-thin slices are generated. Experiments are performed on 3D acoustic data collected from microelectronic packages. Results show that the proposed technique resolves closely spaced features that are unavailable by conventional acoustic imaging, revealing more image details of defects.
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43.35.Zc Use of ultrasonics in nondestructive testing, industrial processes, and industrial products
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
81.70.Cv Nondestructive testing: ultrasonic testing, photoacoustic testing
61.72.Nn Stacking faults and other planar or extended defects
43.60.Hj Time-frequency signal processing, wavelets

Characterization of write-once blu-ray disk containing Cu–Al/Si recording layer using transmission electron microscopy

Hung-Chuan Mai, Tsung-Eong Hsieh, and Shiang-Yao Jeng

Appl. Phys. Lett. 98, 094103 (2011); http://dx.doi.org/10.1063/1.3560053 (3 pages) | Cited 1 time

Online Publication Date: 1 March 2011

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Microstructure change in write-once blu-ray disk containing Cu–Al/Si recording layer was investigated by transmission electron microscopy. Nanoscale crystallites were found to comprise of the Cu–Al/Si recording layer before and after signal writing and the energy dispersive spectroscopy revealed insignificant composition fluctuation in disk sample. Analytical results indicated the signal properties of disk samples are correlated with a moderate improvement of crystallinity and the formation of Cu and Si solid-solution phases due to element mixing in mark area, rather than the formation of Cu3Si silicide and recrystallization of recording layer as reported by previous studies.
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42.79.Vb Optical storage systems, optical disks

Effect of nanoscale surface roughness on transverse energy spread from GaAs photocathodes

Siddharth Karkare and Ivan Bazarov

Appl. Phys. Lett. 98, 094104 (2011); http://dx.doi.org/10.1063/1.3559895 (3 pages) | Cited 4 times

Online Publication Date: 2 March 2011

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High quantum yield, low transverse energy spread, and prompt response time make GaAs activated to negative electron affinity an ideal candidate for a photocathode in high brightness photoinjectors. Even after decades of investigation, the exact mechanism of electron emission from GaAs is not well understood. We show that a nanoscale surface roughness can affect the transverse electron spread from GaAs by nearly an order of magnitude and explain the seemingly controversial experimental results obtained so far. This model can also explain the measured dependence of transverse energy spread on the wavelength of incident light.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
68.35.bg Semiconductors
73.20.-r Electron states at surfaces and interfaces

A method to characterize the sheet resistance of a laser doped line on crystalline silicon wafers for photovoltaic applications

Kee Soon Wang, Budi S. Tjahjono, Ashraf Uddin, and Stuart R. Wenham

Appl. Phys. Lett. 98, 094105 (2011); http://dx.doi.org/10.1063/1.3560056 (3 pages) | Cited 1 time

Online Publication Date: 2 March 2011

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A theory is presented that correlates the different sheet resistance (Rsh) values of the same phosphorus laser doped (LD) line approximated by two different methods: the LD box and transfer length measurement (TLM) methods. By modeling the LD line junction profile, an effective Rsh value using the LD box method is obtained and used to derive the Rsh upper limit (Rsh.UL) of the LD line. This value matches within ±10% of the Rsh.UL value obtained using the TLM method across four lasing speeds. Subsequently, a LD box method is introduced to determine the LD line Rsh.UL easily without modeling work.
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72.80.Cw Elemental semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
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