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5 Sep 2011

Volume 99, Issue 10, Articles (10xxxx)

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Appl. Phys. Lett. 99, 103701 (2011); http://dx.doi.org/10.1063/1.3633066 (3 pages)

Yinan Zhang, David J. S. Birch, and Yu Chen
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Electromagnetic properties of sapphire, ruby, and irradiated ruby at frequencies of 30–40 GHz

Jerzy Krupka, Takeshi Shimada, Itaru Ueda, and Waldemar Karcz

Appl. Phys. Lett. 99, 102901 (2011); http://dx.doi.org/10.1063/1.3635787 (3 pages)

Online Publication Date: 6 September 2011

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Permittivity and electromagnetic losses of sapphire, ruby, and irradiated ruby samples were examined at frequencies of 30–40 GHz and temperatures of 4–300 K employing the whispering gallery mode technique. At room temperature, the dielectric properties of the sapphire, ruby, and irradiated ruby samples were similar. Significant differences in electromagnetic losses took place at cryogenic temperatures. Losses were related to the imaginary part of the susceptibility associated with the presence of paramagnetic Cr3+ ions as well as those introduced by structural defects caused by the irradiation of ruby samples. The presence of impurities and the structural defects result in the dielectric losses being larger than those of pure sapphire.
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77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
61.72.-y Defects and impurities in crystals; microstructure
75.20.Ck Nonmetals
75.30.Cr Saturation moments and magnetic susceptibilities

Origin of 90° domain wall pinning in Pb(Zr0.2Ti0.8)O3 heteroepitaxial thin films

Dong Su, Qingping Meng, C. A. F. Vaz, Myung-Geun Han, Yaron Segal, Fred J. Walker, Monica Sawicki, Christine Broadbridge, and Charles H. Ahn

Appl. Phys. Lett. 99, 102902 (2011); http://dx.doi.org/10.1063/1.3634028 (3 pages) | Cited 4 times

Online Publication Date: 8 September 2011

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We describe a transmission-electron-microscopy study of the ferroelectric domains in an epitaxial Pb(Zr0.2Ti0.8)O3 (PZT) film grown on La0.7Sr0.3MnO3/SrTiO3(001). We directly observe the pinning of 90° domain walls by pairs of misfit dislocations, respectively, with Burgers vectors a [100] and a [001]. Model calculations based on the elastic theory confirm our finding that, in addition to the depolarization field surrounding the dislocation, the strain field of misfit dislocation-pairs plays the primary role in the formation and pinning of a domains.
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77.80.Dj Domain structure; hysteresis
77.55.fg Pb(Zr,Ti)O3-based films
61.72.Lk Linear defects: dislocations, disclinations
77.22.Ej Polarization and depolarization
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity

Ferroelectricity in hafnium oxide thin films

T. S. Böscke, J. Müller, D. Bräuhaus, U. Schröder, and U. Böttger

Appl. Phys. Lett. 99, 102903 (2011); http://dx.doi.org/10.1063/1.3634052 (3 pages) | Cited 12 times

Online Publication Date: 8 September 2011

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We report that crystalline phases with ferroelectric behavior can be formed in thin films of SiO2 doped hafnium oxide. Films with a thickness of 10 nm and with less than 4 mol. % of SiO2 crystallize in a monoclinic/tetragonal phase mixture. We observed that the formation of the monoclinic phase is inhibited if crystallization occurs under mechanical encapsulation and an orthorhombic phase is obtained. This phase shows a distinct piezoelectric response, while polarization measurements exhibit a remanent polarization above 10 μC/cm2 at a coercive field of 1 MV/cm, suggesting that this phase is ferroelectric. Ferroelectric hafnium oxide is ideally suited for ferroelectric field effect transistors and capacitors due to its excellent compatibility to silicon technology.
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77.80.bg Compositional effects
61.66.Fn Inorganic compounds
77.55.hn Other piezoelectric or electrostrictive films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.65.-j Piezoelectricity and electromechanical effects
77.22.Ej Polarization and depolarization
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