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5 Sep 2011

Volume 99, Issue 10, Articles (10xxxx)

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Appl. Phys. Lett. 99, 103701 (2011); http://dx.doi.org/10.1063/1.3633066 (3 pages)

Yinan Zhang, David J. S. Birch, and Yu Chen
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Phase retrieval and compression of low-power white-light pulses

D. Wegkamp, D. Brida, S. Bonora, G. Cerullo, J. Stähler, M. Wolf, and S. Wall

Appl. Phys. Lett. 99, 101101 (2011); http://dx.doi.org/10.1063/1.3635396 (3 pages) | Cited 2 times

Online Publication Date: 6 September 2011

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We characterize and compress sub-nJ visible white-light continuum (WLC) pulses generated by self-phase modulation in yttrium aluminium garnet. The spectral phase is retrieved by spectrally resolving the transient reflectivity from an optically excited transition metal oxide. This measured phase is compensated by applying the appropriate distortion to a deformable mirror. By comparing the response of two different materials, we show that the white-light pulses can be compressed to approximately 10 fs duration.
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42.60.Fc Modulation, tuning, and mode locking
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.79.Bh Lenses, prisms and mirrors

A tunable colloidal quantum dot photo field-effect transistor

Subir Ghosh, Sjoerd Hoogland, Vlad Sukhovatkin, Larissa Levina, and Edward H. Sargent

Appl. Phys. Lett. 99, 101102 (2011); http://dx.doi.org/10.1063/1.3636438 (3 pages) | Cited 3 times

Online Publication Date: 6 September 2011

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We fabricate and investigate field-effect transistors in which a light-absorbing photogate modulates the flow of current along the channel. The photogate consists of colloidal quantum dots that efficiently transfer photoelectrons to the channel across a charge-separating (type-II) heterointerface, producing a primary and sustained secondary flow that is terminated via electron back-recombination across the interface. We explore colloidal quantum dot sizes corresponding to bandgaps ranging from 730 to 1475 nm and also investigate various stoichiometries of aluminum-doped ZnO (AZO) channel materials. We investigate the role of trap state energies in both the colloidal quantum dot energy film and the AZO channel.
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85.30.Tv Field effect devices
85.60.Dw Photodiodes; phototransistors; photoresistors

Spatial, spectral, and polarization properties of coupled micropillar cavities

S. Michaelis de Vasconcellos, A. Calvar, A. Dousse, J. Suffczyński, N. Dupuis, A. Lemaître, I. Sagnes, J. Bloch, P. Voisin, and P. Senellart

Appl. Phys. Lett. 99, 101103 (2011); http://dx.doi.org/10.1063/1.3632111 (3 pages) | Cited 8 times

Online Publication Date: 6 September 2011

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We report on an experimental and numerical study of the spatial and spectral properties of the optical modes in coupled pillar microcavities. Highly efficient photon blockade or bright sources of entangled photon pairs can be implemented by coupling a single quantum emitter to coupled cavities. Parameters for optimal coupling with a single quantum emitter are identified. Polarization properties, which are critical for both applications, are finally discussed. We show that an extremely small polarization splitting is obtained for the first modes in a wide range of parameters.
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42.79.Bh Lenses, prisms and mirrors
78.67.Hc Quantum dots
03.67.Mn Entanglement measures, witnesses, and other characterizations
42.50.Pq Cavity quantum electrodynamics; micromasers
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

High-efficiency graded band-gap AlxGa1−xAs/GaAs photocathodes grown by metalorganic chemical vapor deposition

Yijun Zhang, Benkang Chang, Jun Niu, Jing Zhao, Jijun Zou, Feng Shi, and Hongchang Cheng

Appl. Phys. Lett. 99, 101104 (2011); http://dx.doi.org/10.1063/1.3635401 (3 pages)

Online Publication Date: 7 September 2011

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To enhance the quantum efficiency over the wavelength region of interest, a special graded band-gap structure applied to the AlGaAs/GaAs photocathodes is developed, in which the compositional grade in the AlxGa1−xAs layer is associated with the doping grade in the GaAs layer. The experimental results show that this unique structure can be achieved by the metalorganic chemical vapor deposition technique. As a result of the built-in electric fields arising from the graded band-gap structure, the quantum efficiency in the short-wavelength and long-wavelength regions is significantly increased for the transmission-mode and reflection-mode photocathodes, respectively.
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85.60.Ha Photomultipliers; phototubes and photocathodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Dynamic size tuning of multidimensional optically bound matter

O. Brzobohatý, V. Karásek, T. Čižmár, and P. Zemánek

Appl. Phys. Lett. 99, 101105 (2011); http://dx.doi.org/10.1063/1.3634007 (3 pages) | Cited 1 time

Online Publication Date: 8 September 2011

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We generate and dynamically control one-, two- and three-dimensional optically bound structures of soft matter in the geometry of counter-propagating incoherent laser beams. We report results for the Bessel, Gaussian, and Laguerre-Gaussian laser modes and particularly focus on the influence of the lateral dimensions of the beam profile on the resulting self-arranged optically bound structures. Employing the transfer of the orbital angular momentum of light in the Laguerre-Gaussian beams, we show that optically bound structures can conserve their spatial arrangements even while orbiting along the beam circumference.
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42.50.Wk Mechanical effects of light on material media, microstructures and particles
42.50.Dv Quantum state engineering and measurements
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
33.80.Wz Other multiphoton processes

Metal organic vapor-phase epitaxy of InAs/InGaAsP quantum dots for laser applications at 1.5 μm

E. S. Semenova, I. V. Kulkova, S. Kadkhodazadeh, M. Schubert, and K. Yvind

Appl. Phys. Lett. 99, 101106 (2011); http://dx.doi.org/10.1063/1.3634029 (3 pages) | Cited 2 times

Online Publication Date: 8 September 2011

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The epitaxial growth of InAs/InGaAsP/InP quantum dots (QDs) for emission around 1.5 μm by depositing a thin layer of GaAs on top of the QDs is presented in this letter. The infuence of various growth parameters on the properties of the QDs, in particular, size, shape, chemical composition, and emission wavelength are investigated. Continuous wave lasing in ridge waveguide QD laser structures in the 1.5 μm wavelength range is demonstrated.
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81.07.Ta Quantum dots
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
78.67.Hc Quantum dots

Dilute nitride InGaAsN/GaAs V-groove quantum wires emitting at 1.3 μm wavelength at room temperature

R. Carron, D. Fekete, P. Gallo, B. Dwir, A. Rudra, M. Felici, B. Bartova, M. Cantoni, and E. Kapon

Appl. Phys. Lett. 99, 101107 (2011); http://dx.doi.org/10.1063/1.3610950 (3 pages) | Cited 6 times

Online Publication Date: 9 September 2011

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Site-controlled InGaAsN quantum wires (QWRs) emitting at 1.3 μm at room temperature were grown on V-grooved GaAs substrates by modulated-flux metallorganic vapor phase epitaxy. The nonplanar substrate template is shown to enhance the nitrogen uptake, evidenced by a redshift in photoluminescence wavelength twice larger for the QWRs than for the adjacent quantum well regions. The mechanism of this increase in nitrogen incorporation efficiency, achieved without degradation in optical properties, is explained by the extended gradient of In content at the step-rich QWR interfaces.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.82.Cr Fabrication techniques; lithography, pattern transfer
78.55.Cr III-V semiconductors
78.67.Lt Quantum wires
81.07.Vb Quantum wires
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Excitonic parameters of GaN studied by time-of-flight spectroscopy

T. V. Shubina, A. A. Toropov, G. Pozina, J. P. Bergman, M. M. Glazov, N. A. Gippius, P. Disseix, J. Leymarie, B. Gil, and B. Monemar

Appl. Phys. Lett. 99, 101108 (2011); http://dx.doi.org/10.1063/1.3625431 (3 pages) | Cited 1 time

Online Publication Date: 9 September 2011

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We refine excitonic parameters of bulk GaN by means of time-of-flight spectroscopy of light pulses propagating through crystals. The influence of elastic photon scattering is excluded by using the multiple reflections of the pulses from crystal boundaries. The shapes of these reflexes in the time-energy plane depict the variation of the group velocity induced by excitonic resonances. Modeling of the shapes, as well as optical spectra, shows that a homogeneous width of the order of 10 μeV characterizes the exciton-polariton resonances within the crystal. The oscillator strength of A and B exciton-polaritons is determined as 0.0022 and 0.0016, respectively.
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82.80.Rt Time of flight mass spectrometry
78.55.Cr III-V semiconductors

Highly selective standoff detection and imaging of trace chemicals in a complex background using single-beam coherent anti-Stokes Raman scattering

Marshall T. Bremer, Paul J. Wrzesinski, Nathan Butcher, Vadim V. Lozovoy, and Marcos Dantus

Appl. Phys. Lett. 99, 101109 (2011); http://dx.doi.org/10.1063/1.3636436 (3 pages) | Cited 15 times

Online Publication Date: 9 September 2011

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A non-destructive and highly selective method of standoff detection is presented and quantitatively evaluated. The method is found to be orders of magnitude more sensitive than previous coherent spectroscopy methods, identifying concentrations as low as 2 μg/cm2 of an explosive simulant mixed in a polymer matrix. The approach uses a single amplified femtosecond laser to generate high-resolution multiplex coherent anti-Stokes Raman scattering (CARS) spectra encompassing the fingerprint region (400−2500 cm−1) at standoff distance. Additionally, a standoff imaging modality is introduced, visually demonstrating similar sensitivity and high selectivity, providing promising results toward highly selective trace detection of explosives or warfare agents.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering

Deep-ultraviolet light-emitting device realized via a hole-multiplication process

H. Zhu, C. X. Shan, B. H. Li, Z. Z. Zhang, B. Yao, and D. Z. Shen

Appl. Phys. Lett. 99, 101110 (2011); http://dx.doi.org/10.1063/1.3637575 (3 pages) | Cited 4 times

Online Publication Date: 9 September 2011

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By proper controlling the carrier generation and multiplication processes, an Au/MgO/Mg0.52Zn0.48O/MgxZn1−xO/n-ZnO structure has been designed and fabricated. In this structure, holes are multiplied via an impact ionization process in the MgO layer and injected into the Mg0.52Zn0.48O layer, and electrons are injected into the Mg0.52Zn0.48O layer from the n-ZnO layer through a composition-gradient MgxZn1−xO bridging layer. With the injection of electrons and holes, a deep ultraviolet emission at around 276 nm, coming from the Mg0.52Zn0.48O active layer, has been observed. The results reported in this letter may provide a promising route to high performance deep ultraviolet light-emitting devices.
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85.60.Jb Light-emitting devices
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