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5 Sep 2011

Volume 99, Issue 10, Articles (10xxxx)

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Appl. Phys. Lett. 99, 103701 (2011); http://dx.doi.org/10.1063/1.3633066 (3 pages)

Yinan Zhang, David J. S. Birch, and Yu Chen
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Threshold conductivity switching in sulfurized antimony selenide nanowires

C. Karthik, Rutvik J. Mehta, Wei Jiang, Eduardo Castillo, Theodorian Borca-Tasciuc, and Ganpati Ramanath

Appl. Phys. Lett. 99, 103101 (2011); http://dx.doi.org/10.1063/1.3624465 (3 pages) | Cited 1 time

Online Publication Date: 6 September 2011

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We report reversible switching between Ohmic and negative differential resistance states at a threshold voltage in sub-100-nm diameter sulfurized antimony selenide nanowires. We show that threshold switching in our nanowires arises due to high non-equilibrium free carrier concentrations resulting from impact ionization of carriers from defect states traceable to sulfurization and surface dangling bonds. Threshold switching is suppressed because of inhibited carrier generation at air-passivated defect states or at high temperatures due to thermally induced carrier depletion from deep states which preempts impact ionization. Such non-linear phenomena would be important for designing phase-change memories, thermoelectric devices, and sensors using pnictogen chalcogenide nanowires.
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73.21.Hb Quantum wires
73.50.-h Electronic transport phenomena in thin films
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Switching magnetoresistance in vertically interfaced Pr0.5Ca0.5MnO3 grown on ZnO nanowires

R. V. K. Mangalam, Z. Zhang, T. Wu, and W. Prellier

Appl. Phys. Lett. 99, 103102 (2011); http://dx.doi.org/10.1063/1.3627182 (3 pages) | Cited 1 time

Online Publication Date: 8 September 2011

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The synthesis, morphology, and magneto-transport properties of nanostructure-engineered charge-ordered Pr0.5Ca0.5MnO3 grown on ZnO nanowires are reported. The stability of the charge-ordering can be tuned, but more interestingly, the sign of the magnetoresistance is inverted at low temperatures. Coexistence of ferromagnetic clusters on the surface and antiferromagnetic phase in the core of the grains were considered in order to understand these features. This work suggests that such a process of growing on nanowires (NW) network can be readily extended to other transition metal oxides and open doors towards tailoring their functionalities.
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81.07.Gf Nanowires
75.75.-c Magnetic properties of nanostructures
72.20.My Galvanomagnetic and other magnetotransport effects
75.50.Dd Nonmetallic ferromagnetic materials
75.50.Ee Antiferromagnetics
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)

Luminescence blue-shift of CdSe nanowires beyond the quantum confinement regime

Yuan Yan, Zhi-Min Liao, Ya-Qing Bie, Han-Chun Wu, Yang-Bo Zhou, Xue-Wen Fu, and Da-Peng Yu

Appl. Phys. Lett. 99, 103103 (2011); http://dx.doi.org/10.1063/1.3634047 (3 pages) | Cited 3 times

Online Publication Date: 8 September 2011

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Photoluminescence (PL) properties of individual CdSe nanowires with diameters beyond the quantum confinement regime have been studied. A blue-shift in the PL spectra was observed with decreasing nanowire diameter. We attribute the blue-shift to band-filling effect. Carrier density induced by surface vacancy doping and laser excitation is found to be high enough to meet the criterion of the band-filling effect and increases with decreasing nanowire diameter. Temperature dependent PL analysis and characterizations of a single CdSe nanowire based field-effect transistor were also performed.
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85.30.Tv Field effect devices
78.55.Et II-VI semiconductors
81.07.Gf Nanowires
81.05.Dz II-VI semiconductors
78.67.Uh Nanowires
61.72.uj III-V and II-VI semiconductors
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Influence of carrier density on the electronic cooling channels of bilayer graphene

T. Limmer, A. J. Houtepen, A. Niggebaum, R. Tautz, and E. Da Como

Appl. Phys. Lett. 99, 103104 (2011); http://dx.doi.org/10.1063/1.3633099 (3 pages) | Cited 2 times

Online Publication Date: 9 September 2011

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We study the electronic cooling dynamics in a single flake of bilayer graphene by femtosecond transient absorption probing the photon-energy range 0.25–1.3 eV. From the transients, we extract the carrier cooling curves for different initial temperatures and densities of the photoexcited electrons and holes. Two regimes of carrier cooling, dominated by optical and acoustic phonons emission, are clearly identified. For increasing carrier density, the crossover between the two regimes occurs at larger carrier temperatures, since cooling via optical phonons experiences a bottleneck. Acoustic phonons, which are less sensitive to saturation, show an increasing contribution at high density.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
62.65.+k Acoustical properties of solids
78.20.Pa Photoacoustic effects

Remote actuation of a mechanical resonator

D. Hatanaka, I. Mahboob, and H. Yamaguchi

Appl. Phys. Lett. 99, 103105 (2011); http://dx.doi.org/10.1063/1.3635781 (3 pages)

Online Publication Date: 9 September 2011

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A micron-sized mechanical resonator is placed inside a coil operating at radio frequencies (RFs). The mechanical response is highly sensitive to continuous RF irradiation with the observation of both resonance frequency and quality factor shifts. If the RF amplitude is modulated at the natural mechanical frequency, it can drive the mechanical oscillator to resonance with an actuation efficiency of 4.0 μm/V. This remote actuation method is a promising technique to access performance and functionality beyond conventional actuation schemes.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
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