APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

12 Sep 2011

Volume 99, Issue 11, Articles (11xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 99, 113501 (2011); http://dx.doi.org/10.1063/1.3634072 (3 pages)

Asif Islam Khan, Debanjan Bhowmik, Pu Yu, Sung Joo Kim, Xiaoqing Pan, Ramamoorthy Ramesh, and Sayeef Salahuddin
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications

J. Müller, T. S. Böscke, D. Bräuhaus, U. Schröder, U. Böttger, J. Sundqvist, P. Kücher, T. Mikolajick, and L. Frey

Appl. Phys. Lett. 99, 112901 (2011); http://dx.doi.org/10.1063/1.3636417 (3 pages) | Cited 7 times

Online Publication Date: 12 September 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the observation of ferroelectricity in capacitors based on hafnium-zirconium-oxide. Hf0.5Zr0.5O2 thin films of 7.5 to 9.5 nm thickness were found to exhibit ferroelectric polarization-voltage hysteresis loops when integrated into TiN-based metal-insulator-metal capacitors. A remnant polarization of 16 μC/cm2 and a high coercive field of 1 MV/cm were observed. Further proof for the ferroelectric nature was collected by quasi-static polarization-voltage hysteresis, small signal capacitance-voltage, and piezoelectric measurements. Data retention characteristics were evaluated by a Positive Up Negative Down pulse technique. No significant decay of the initial polarization state was observed within a measurement range of up to two days.
Show PACS
84.32.Tt Capacitors
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
85.50.Gk Non-volatile ferroelectric memories

Controlled oxygen vacancy induced p-type conductivity in HfO2−x thin films

Erwin Hildebrandt, Jose Kurian, Mathis M. Müller, Thomas Schroeder, Hans-Joachim Kleebe, and Lambert Alff

Appl. Phys. Lett. 99, 112902 (2011); http://dx.doi.org/10.1063/1.3637603 (3 pages) | Cited 3 times

Online Publication Date: 12 September 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have synthesized highly oxygen deficient HfO2−x thin films by controlled oxygen engineering using reactive molecular beam epitaxy. Above a threshold value of oxygen vacancies, p-type conductivity sets in with up to 6 times 1021 charge carriers per cm3. At the same time, the band-gap is reduced continuously by more than 1 eV. We suggest an oxygen vacancy induced p-type defect band as origin of the observed behavior.
Show PACS
71.55.Ht Other nonmetals
73.61.Ng Insulators
68.55.aj Insulators
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.20.Ps Other inorganic compounds
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y2O3 films

X. D. Huang, L. Liu, J. P. Xu, and P. T. Lai

Appl. Phys. Lett. 99, 112903 (2011); http://dx.doi.org/10.1063/1.3639275 (3 pages) | Cited 1 time

Online Publication Date: 14 September 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The charge-trapping properties of HfYON film are investigated by using the Al/HfYON/SiO2/Si structure. The physical features of this film were explored by transmission electron microscopy and x-ray photoelectron spectroscopy. The proposed device shows better charge-trapping characteristics than samples with HfON or Y2O3 as the charge-trapping layer due to its higher trapping efficiency, as confirmed by extracting their charge-trap centroid and charge-trap density. Moreover, the Al/Al2O3/HfYON/SiO2/Si structure shows high program speed (4.5 V at +14 V, 1 ms), large memory window (6.0 V at ±14 V, 1 s), and good retention property, further demonstrating that HfYON is a promising candidate as the charge-trapping layer for nonvolatile memory applications.
Show PACS
84.30.Sk Pulse and digital circuits
79.60.Dp Adsorbed layers and thin films

Phase transitions in ferroelectric silicon doped hafnium oxide

T. S. Böscke, St. Teichert, D. Bräuhaus, J. Müller, U. Schröder, U. Böttger, and T. Mikolajick

Appl. Phys. Lett. 99, 112904 (2011); http://dx.doi.org/10.1063/1.3636434 (3 pages) | Cited 3 times

Online Publication Date: 15 September 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We investigated phase transitions in ferroelectric silicon doped hafnium oxide (FE-Si:HfO2) by temperature dependent polarization and x-ray diffraction measurements. If heated under mechanical confinement, the orthorhombic ferroelectric phase reversibly transforms into a phase with antiferroelectric behavior. Without confinement, a transformation into a monoclinic/tetragonal phase mixture is observed during cooling. These results suggest the existence of a common higher symmetry parent phase to the orthorhombic and monoclinic phases, while transformation between these phases appears to be inhibited by an energy barrier.
Show PACS
77.80.B- Phase transitions and Curie point
77.22.Ej Polarization and depolarization
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close