APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

12 Sep 2011

Volume 99, Issue 11, Articles (11xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 99, 113501 (2011); http://dx.doi.org/10.1063/1.3634072 (3 pages)

Asif Islam Khan, Debanjan Bhowmik, Pu Yu, Sung Joo Kim, Xiaoqing Pan, Ramamoorthy Ramesh, and Sayeef Salahuddin
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Radiation patterns from coupled photonic crystal nanocavities

M. Brunstein, T. J. Karle, I. Sagnes, F. Raineri, J. Bloch, Y. Halioua, G. Beaudoin, L. Le Gratiet, J. A. Levenson, and A. M. Yacomotti

Appl. Phys. Lett. 99, 111101 (2011); http://dx.doi.org/10.1063/1.3633106 (3 pages) | Cited 7 times

Online Publication Date: 12 September 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on far field measurements on two coupled photonic crystal nanocavities. The distinct features of the antisymmetric modes (minima of intensity at zero-emission angles) allow us to demonstrate a π-phase difference between the cavity fields, a clear signature of evanescent coupling. Good agreement between experimental results and simulated radiation patterns has been found.
Show PACS
42.70.Qs Photonic bandgap materials
07.60.-j Optical instruments and equipment

A hot-carrier solar cell with optical energy selective contacts

D. J. Farrell, Y. Takeda, K. Nishikawa, T. Nagashima, T. Motohiro, and N. J. Ekins-Daukes

Appl. Phys. Lett. 99, 111102 (2011); http://dx.doi.org/10.1063/1.3636401 (3 pages) | Cited 2 times

Online Publication Date: 12 September 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The hot-carrier solar cell (HC-SC) is an ambitious approach to solar energy conversion which in principle can achieve high efficiency (84%) from a single bandgap semiconductor. Here we propose a method of utilising hot-carriers within a photovoltaic device in which energy is extracted optically from a hot-carrier distribution rather than through the usual approach of electrical conduction. Depending on the optical extraction rate, the concept proposed here may attain an upper efficiency approaching that of the conventional HC-SC.
Show PACS
88.40.H- Solar cells (photovoltaics)
72.20.Ht High-field and nonlinear effects

Light-induced spontaneous pattern formation in nematic liquid crystal cells

István Jánossy, Katalin Fodor-Csorba, Anikó Vajda, and Laura O. Palomares

Appl. Phys. Lett. 99, 111103 (2011); http://dx.doi.org/10.1063/1.3635785 (3 pages) | Cited 1 time

Online Publication Date: 13 September 2011

Full Text: Read Online (HTML) | Download PDF

multimedia

Show Abstract
Optically induced instabilities were observed in nematic liquid crystals sandwiched between a photosensitive layer and a reference plate. The instabilities occurred when the light entered the cell from the reference plate and its polarization was parallel to the director alignment at the entrance face. Two kinds of patterns were detected, a static and a dynamic one. The underlying mechanism of pattern formation is the coupling between the director orientation on the photosensitive plate and the polarization direction of the light on that plate.
Show PACS
78.15.+e Optical properties of fluid materials, supercritical fluids and liquid crystals
42.65.Sf Dynamics of nonlinear optical systems; optical instabilities, optical chaos and complexity, and optical spatio-temporal dynamics
42.70.Df Liquid crystals
61.30.Eb Experimental determinations of smectic, nematic, cholesteric, and other structures

Distance-dependence of the coupling between split-ring resonators and single-quantum-well gain

N. Meinzer, M. König, M. Ruther, S. Linden, G. Khitrova, H. M. Gibbs, K. Busch, and M. Wegener

Appl. Phys. Lett. 99, 111104 (2011); http://dx.doi.org/10.1063/1.3633353 (3 pages) | Cited 3 times

Online Publication Date: 13 September 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present low-temperature femtosecond pump-probe experiments on arrays of silver split-ring resonators coupled to single quantum wells, in which we vary the geometrical separation between the two components to study the variation of coupling with distance. Its strength is found to decrease exponentially with increasing separation with a 1/e length on the order of 8 nm. We further link our experimental results to numerical calculations of the near fields which show the same distance-dependence as the coupling strength in the experiment. Together, this confirms the assumption of a near-field-assisted coupling mechanism.
Show PACS
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Direct generation of 20 W peak power picosecond optical pulses from an external-cavity mode-locked GaInN laser diode incorporating a flared waveguide

Tomoyuki Oki, Rintaro Koda, Shunsuke Kono, Takao Miyajima, Hideki Watanabe, Masaru Kuramoto, Masao Ikeda, and Hiroyuki Yokoyama

Appl. Phys. Lett. 99, 111105 (2011); http://dx.doi.org/10.1063/1.3640499 (3 pages) | Cited 2 times

Online Publication Date: 13 September 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We directly generated 1.6-ps optical pulses with a peak power of 20 W at a repetition of 1 GHz using a blue-violet GaInN mode-locked laser diode incorporating a flared waveguide operating in single transverse mode. The flared waveguide enabled optical pulses to be generated with peak powers of over six times higher than those produced using a straight waveguide while preserving the pulse duration.
Show PACS
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Gn Optical waveguides and couplers
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Ultra-low threshold polariton lasing in photonic crystal cavities

Stefano Azzini, Dario Gerace, Matteo Galli, Isabelle Sagnes, Rémy Braive, Aristide Lemaître, Jacqueline Bloch, and D. Bajoni

Appl. Phys. Lett. 99, 111106 (2011); http://dx.doi.org/10.1063/1.3638469 (3 pages) | Cited 9 times

Online Publication Date: 13 September 2011

Full Text: Read Online (HTML) | Download PDF


See Also: Erratum

Show Abstract
The authors show clear experimental evidence of lasing of exciton polaritons confined in L3 photonic crystal cavities. The samples are based on an InP membrane in air containing five InAsP quantum wells. Polariton lasing is observed with thresholds as low as 120 nW, below the Mott transition, while conventional photon lasing is observed for a pumping power one to three orders of magnitude higher.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.55.Tv Photonic crystal lasers and coherent effects
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.70.Qs Photonic bandgap materials
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Angular resolved scattering by a nano-textured ZnO/silicon interface

M. Schulte, K. Bittkau, K. Jäger, M. Ermes, M. Zeman, and B. E. Pieters

Appl. Phys. Lett. 99, 111107 (2011); http://dx.doi.org/10.1063/1.3640238 (3 pages) | Cited 8 times

Online Publication Date: 14 September 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Textured interfaces in thin-film silicon solar cells improve the efficiency by light scattering. A technique to get experimental access to the angular intensity distribution (AID) at textured interfaces of the transparent conductive oxide (TCO) and silicon is introduced. Measurements are performed on a sample with polished microcrystalline silicon layer deposited onto a rough TCO layer. The AID determined from the experiment is used to validate the AID obtained by a rigorous solution of Maxwell’s equations. Furthermore, the applicability of other theoretical approaches based on scalar scattering theory and ray tracing is discussed with respect to the solution of Maxwell’s equations.
Show PACS
88.40.jj Silicon solar cells
88.40.hj Efficiency and performance of solar cells

Superconducting single photon detectors integrated with single flux quantum readout circuits in a cryocooler

Shigehito Miki, Hirotaka Terai, Taro Yamashita, Kazumasa Makise, Mikio Fujiwara, Masahide Sasaki, and Zhen Wang

Appl. Phys. Lett. 99, 111108 (2011); http://dx.doi.org/10.1063/1.3640503 (3 pages) | Cited 5 times

Online Publication Date: 14 September 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the operation of superconducting single photon detectors (SSPDs) with integrated readout electronics based on a single-flux-quantum (SFQ) circuit. The SSPDs were connected to a SFQ readout circuit without bias tee in a cryocooler system, and detection efficiencies (DEs) were measured to verify their correct operation. The DE curves matched well with those measured by conventional readout electronics, and the maximum bias current for normal operation was increased. In addition, we confirmed that the SFQ circuit correctly merged the input signals from two SSPDs. SSPDs with a SFQ readout circuit demonstrated a favorable timing jitter of 50 ps.
Show PACS
85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
84.30.-r Electronic circuits
07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment

Enhanced electrostatic discharge properties of nitride-based light-emitting diodes with inserting Si-delta-doped layers

Zhiyuan Zheng, Zimin Chen, Yulun Xian, Bingfeng Fan, Shanjin Huang, Weiqing Jia, Zhisheng Wu, Gang Wang, and Hao Jiang

Appl. Phys. Lett. 99, 111109 (2011); http://dx.doi.org/10.1063/1.3637599 (3 pages) | Cited 2 times

Online Publication Date: 14 September 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report significantly improved electrostatic discharge (ESD) properties of InGaN/GaN-based light-emitting diodes (LEDs) with inserting Si-delta-doped layers between multiple quantum wells and n-cladding layer. The ESD endurance voltage increased from −1200 V to −4000 V with the insertion of delta-doped layers. The mechanism of the enhanced ESD properties was then investigated. According to capacitance-voltage results, the factor of capacitance modulation was ruled out. However, infrared microscopy image proved better current spreading in the LEDs with delta-doped layers. In addition, current-voltage, photoluminescence, and atomic force microscope measurements demonstrated substantial quality improvements. These two reasons were considered as the dominant mechanisms of the enhanced ESD properties.
Show PACS
85.60.Jb Light-emitting devices

Polariton laser based on a ZnO photonic crystal slab

D. D. Solnyshkov, T. Weiss, G. Malpuech, and N. A. Gippius

Appl. Phys. Lett. 99, 111110 (2011); http://dx.doi.org/10.1063/1.3639272 (3 pages) | Cited 2 times

Online Publication Date: 15 September 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We propose a scheme of a ZnO room-temperature polariton laser based on a photonic crystal slab. We predict a very low threshold density for optical pumping: 5 × 1016 cm−3. We have studied the threshold dependence on the parameters of the system, such as detuning. The main advantage of photonic-crystal-based polariton laser is expected to be the simplicity of production.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
42.70.Qs Photonic bandgap materials

Controlled tuning of whispering gallery modes of GaN/InGaN microdisk cavities

Igor Aharonovich, Nan Niu, Fabian Rol, Kasey J. Russell, Alexander Woolf, Haitham A. R. El-Ella, Menno J. Kappers, Rachel A Oliver, and Evelyn L. Hu

Appl. Phys. Lett. 99, 111111 (2011); http://dx.doi.org/10.1063/1.3640211 (3 pages) | Cited 1 time

Online Publication Date: 15 September 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Controlled tuning of the whispering gallery modes of GaN/InGaN microdisk cavities is demonstrated. The whispering gallery mode (WGM) tuning is achieved at room temperature by immersing the microdisks in water and irradiating with ultraviolet laser. The tuning rate can be controlled by varying the laser excitation power, with a nanometer precision accessible at low excitation power (approximately several μW). The selective oxidation mechanism is proposed to explain the results and supported by theoretical analysis. The tuning of WGMs in GaN/InGaN microdisk cavities may have important implications in cavity quantum electrodynamics and the development of efficient light emitting devices.
Show PACS
42.62.-b Laser applications

Stability of Al/Ti/Au contacts to N-polar n-GaN of GaN based vertical light emitting diode on silicon substrate

Junlin Liu, Feifei Feng, Yinhua Zhou, Jianli Zhang, and Fengyi Jiang

Appl. Phys. Lett. 99, 111112 (2011); http://dx.doi.org/10.1063/1.3640229 (3 pages) | Cited 2 times

Online Publication Date: 15 September 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The electrical characteristics of Al/Ti/Au contact to N-polar n-GaN on Si substrate are investigated. It was found that a pre-treatment to the surface with Ar plasma could significantly enhance the stability of Al/Ti/Au contact. Forward voltage of the pre-treated sample was stabilized at about 3.23 V upon 1000 h aging under 900 mA and room temperature. In contrast, forward voltage of the untreated sample increased from 3.52 V to 4 V after 24 h aging. Those differences between the Ar plasma treated sample and untreated sample were attributed to the increase of the VN concentrate near surface of n-GaN by the Ar plasma treatment.
Show PACS
85.60.Jb Light-emitting devices

Tuning of a cavity in a silicon photonic crystal by thermal expansion of an elastomeric infill

A. Koray Erdamar, M. M. van Leest, S. J. Picken, and J. Caro

Appl. Phys. Lett. 99, 111113 (2011); http://dx.doi.org/10.1063/1.3640235 (3 pages) | Cited 1 time

Online Publication Date: 16 September 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We use an elastomer as infill material for a photonic crystal. As a result of the thermal-expansion-induced strongly negative thermal optical coefficient, this material is highly suitable for thermal tuning of the transmission of a cavity. This is demonstrated by global infilling of a hole-type silicon photonic crystal slab and global thermal tuning. In the temperature range 20-60 °C the cavity peak shows a pronounced elastomer-induced blue shift of 2.7 nm, which amply overcompensates the red shift arising from the thermo-optic property of the silicon. These results qualify the elastomer for tuning by local optical heating.
Show PACS
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
78.20.N- Thermo-optic effects
65.60.+a Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.
42.70.Qs Photonic bandgap materials

Improvement of surface-enhanced Raman scattering performance for broad band gap semiconductor nanomaterial (TiO2): Strategy of metal doping

Libin Yang, Xin Jiang, and Ming Yang

Appl. Phys. Lett. 99, 111114 (2011); http://dx.doi.org/10.1063/1.3638467 (3 pages) | Cited 1 time

Online Publication Date: 16 September 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The strategy of metal doping was performed to improve surface-enhanced Raman scattering (SERS) performance for semiconductor TiO2 and deeply understand the contributing/controlling factors of semiconductor (TiO2)-to-molecule charge transfer (CT) mechanism contributed to SERS. The amount and intrinsic nature of doping ions have a great influence on SERS enhancement. An appropriate doping amount of Fe3+, Co2+, and Ni2+ is 0.5%, 1%, 3% mol., respectively, which can enormously improve SERS properties of TiO2 substrate. The considerable SERS enhancement is attributed to doped metal ions, which can embed abundant doping level in TiO2 band gap contributing to semiconductor (TiO2)-to-molecule CT and SERS effect.
Show PACS
78.30.Hv Other nonmetallic inorganics
61.72.U- Doping and impurity implantation
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close