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Applied Physics Letters / Volume 99 / Issue 12 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 99, 121106 (2011); http://dx.doi.org/10.1063/1.3636418 (3 pages)

Emission and absorption cross-sections of an Er:GaN waveguide prepared with metal organic chemical vapor deposition

Q. Wang1, R. Dahal2, I.-W. Feng2, J. Y. Lin2, H. X. Jiang2, and R. Hui1

1Department of Electrical Engineering and Computer Science, The University of Kansas, Lawrence, Kansas 66045, USA
2Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, USA

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(Received 9 August 2011; accepted 19 August 2011; published online 20 September 2011)

We repost the characterization of emission and absorption cross-sections in an erbium-doped GaN waveguide prepared by metal organic chemical vapor deposition. The emission cross-section was obtained with the Füchtbauer–Ladenburg equation based on the measured spontaneous emission and the radiative carrier lifetime. The absorption cross-section was derived from the emission cross-section through their relation provided from the McCumber’s theory. The conversion efficiency from a 1480 nm pump to 1537 nm emission was measured, which reasonably agreed with the calculation based on the emission and absorption cross-sections.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

carrier lifetime, erbium, gallium compounds, III-V semiconductors, infrared spectra, light absorption, MOCVD coatings, optical materials, optical waveguides, spontaneous emission, wide band gap semiconductors

PACS

  • 42.79.Gn

    Optical waveguides and couplers

  • 78.30.Fs

    III-V and II-VI semiconductors

  • 78.55.Cr

    III-V semiconductors

  • 78.66.Fd

    III-V semiconductors

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3636418

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, Appl. Phys. Lett. 90, 051110 (2007)APPLAB000090000005051110000001.

    Q. Wang, R. Hui, R. Dahal, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 97, 241105 (2010)APPLAB000097000024241105000001.


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