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26 Sep 2011

Volume 99, Issue 13, Articles (13xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 99, 131101 (2011); http://dx.doi.org/10.1063/1.3641907 (3 pages)

Linas Minkevičius, Vincas Tamošiūnas, Irmantas Kašalynas, Dalius Seliuta, Gintaras Valušis, Alvydas Lisauskas, Sebastian Boppel, Hartmut G. Roskos, and Klaus Köhler
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Polar-fluoropolymer blends with tailored nanostructures for high energy density low loss capacitor applications

Shan Wu, Minren Lin, S. G. Lu, Lei Zhu, and Q. M. Zhang

Appl. Phys. Lett. 99, 132901 (2011); http://dx.doi.org/10.1063/1.3645009 (3 pages) | Cited 5 times

Online Publication Date: 27 September 2011

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A polar-fluoropolymer blend consisting of a high energy density poly(vinylidene fluoride-chlorotrifluoroethylene) (P(VDF-CTFE)) and a low dielectric loss poly(ethylene-chlorotrifluoroethylene) (ECTFE) was developed. Both the blend and crosslinked blend films exhibit a dielectric constant of 7 and low loss (∼1%), as expected from the classical composite theory. Moreover, introducing crosslinking in the blends can lead to a marked reduction of losses in blend films at high fields while maintaining a high energy density. At 250 MV/m, a loss of 3% can be achieved in the crosslinked blend compared with 7% loss in pure blend, which is already much below that of neat P(VDF-CTFE) (∼35%).
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77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.84.Jd Polymers; organic compounds
77.84.Lf Composite materials
84.32.Tt Capacitors

Band structure and electronic characteristics of cubic La2O3 gate dielectrics epitaxially grown on InP substrates

Xinqiang Zhang, Hailing Tu, Hongbin Zhao, Mengmeng Yang, Xiaona Wang, Yuhua Xiong, Zhimin Yang, Jun Du, Wenwu Wang, and Dapeng Chen

Appl. Phys. Lett. 99, 132902 (2011); http://dx.doi.org/10.1063/1.3643470 (3 pages) | Cited 2 times

Online Publication Date: 27 September 2011

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We first reported the hetero-epitaxial growth with good lattice matching of cubic structure La2O3 dielectric ultra-thin films on InP substrates by PLD. Epitaxial relationship between the La2O3 film and InP substrate, namely [001]La2O3||[001]InP and [012]La2O3||[012]InP, and cross-section of the stack without interface layer have been revealed by RHEED and HRTEM. The band offset for La2O3/InP is evaluated to be 1.62 eV for valence band and 2.61 eV for conduction band by XPS. A leakage current of 2 × 10−4 A/cm2 at bias voltage of −1 V and small equivalent oxide thickness of 0.3 nm have been measured on the capacitors with W/La2O3/InP/Al stack.
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77.55.df For silicon electronics
71.20.Ps Other inorganic compounds
68.55.aj Insulators
79.60.Dp Adsorbed layers and thin films
73.61.Ng Insulators
81.15.Fg Pulsed laser ablation deposition

Tunable and absolute electromagnetic vacuum in two-dimensional photonic-band-gap Based on multiferroic materials

Kai Chen, Wei Jia, Yanbin Chen, Minghui Lu, Xirui Zhang, Wei Yang, Yong Wu, Chenxi Huang, Xiangyin Li, Jie Su, Junming Liu, Xiaomei Lu, Jinsong Zhu, and Yun Liu

Appl. Phys. Lett. 99, 132903 (2011); http://dx.doi.org/10.1063/1.3643053 (3 pages)

Online Publication Date: 28 September 2011

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When multiferroic terbium manganite (TbMnO3) crystal cylinders are periodically arranged in a square lattice, the resulting two-dimensional (2D) system exhibits photonic band gaps (PBGs). The absolute PBG originating from the Mie resonance is modulated from closed to open by applying an external static magnetic field, which is attributed to the electromagnon depression of the dielectric constant by the rearrangement of antiferromagnetic order. Tunable electromagnetic band structure may be realized by controlling the magnetic transition of manganese spins in TbMnO3.
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42.70.Qs Photonic bandgap materials
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
77.22.Ch Permittivity (dielectric function)
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
75.85.+t Magnetoelectric effects, multiferroics
77.55.Nv Multiferroic/magnetoelectric films

Enhanced photovoltaic properties in graphene/polycrystalline BiFeO3/Pt heterojunction structure

Yongyuan Zang, Dan Xie, Xiao Wu, Yu Chen, Yuxuan Lin, Mohan Li, He Tian, Xiao Li, Zhen Li, Hongwei Zhu, Tianling Ren, and David Plant

Appl. Phys. Lett. 99, 132904 (2011); http://dx.doi.org/10.1063/1.3644134 (3 pages) | Cited 11 times

Online Publication Date: 28 September 2011

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We report the enhanced photovoltaic properties in polycrystalline BiFeO3 (BFO) thin films with graphene as top electrodes. The short circuit current density (Jsc) and open circuit voltage of the heterojunction are measured to be 25 μA/cm2 and 0.44 V, respectively, much higher than the reported values for polycrystalline BFO with indium tin oxide (ITO) as top electrodes. Influence of HNO3 treatment on the photovoltaic properties is studied, and a significant photocurrent density improvement from 25 μA/cm2 to 2.8 mA/cm2 is observed. A metal-intrinsic semiconductor-metal model is proposed to explain the graphene induced enhancement comparing with traditional ITO.
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72.40.+w Photoconduction and photovoltaic effects
79.60.Jv Interfaces; heterostructures; nanostructures

Nanoscale phase separation in quasi-uniaxial and biaxial strained multiferroic thin films

Yajun Qi, Chuanwei Huang, Zuhuang Chen, Zhenlin Luo, Yiqian Wang, Jun Guo, Tim White, Junling Wang, Chen Gao, Thirumany Sritharan, and Lang Chen

Appl. Phys. Lett. 99, 132905 (2011); http://dx.doi.org/10.1063/1.3644958 (3 pages) | Cited 1 time

Online Publication Date: 29 September 2011

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Nanoscale phase separation was investigated in epitaxial strained BiFeO3 thin films on LaAlO3 single crystal substrate. In biaxial strained thin films, nanoscale mixtures of the tetragonal-like and rhombohedral-like phases occur with a film thickness above 35 nm. For 10-30 nm ultrathin ones, tetragonal-like single phase is confirmed using synchrotron x-ray and the atomic force microscopy studies. However, nanoscale phase separations are still observed in quasi-uniaxial transmission electron microscopy foil specimens for those ultrathin films, indicating the phase separation emerges in a much smaller thickness in uniaxial constraint films than that in biaxial ones.
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81.30.Dz Phase diagrams of other materials
77.80.-e Ferroelectricity and antiferroelectricity
68.55.-a Thin film structure and morphology

Spin-flop driven magneto-dielectric effect in Co4Nb2O9

T. Kolodiazhnyi, H. Sakurai, and N. Vittayakorn

Appl. Phys. Lett. 99, 132906 (2011); http://dx.doi.org/10.1063/1.3645017 (3 pages)

Online Publication Date: 29 September 2011

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Co4Nb2O9 becomes antiferromagnetic (AFM) below 27.4 K with a spin-flop transition at a critical field, Hc, of 12 kOe. Room-temperature dielectric properties are dominated by finite electronic conductivity. Below 125 K, the charge carriers are frozen-out and the dielectric constant is controlled by the lattice phonons. A large (12%) spin flop-driven enhancement in dielectric constant is found in the very narrow temperature interval (Δ T = 1.6 K) in the vicinity of the AFM phase transition. Magneto-dielectric anomaly shows low-frequency dispersion; therefore, the H-induced changes in the phonon eigenfrequencies are unlikely. Other possible reasons for unusual magneto-dielectric effect in Co4Nb2O9 are discussed.
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75.85.+t Magnetoelectric effects, multiferroics
75.30.Wx Spin crossover
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.40.Cx Static properties (order parameter, static susceptibility, heat capacities, critical exponents, etc.)
77.22.Ch Permittivity (dielectric function)
75.50.Ee Antiferromagnetics

Surface passivation of p-type Ge substrate with high-quality GeNx layer formed by electron-cyclotron-resonance plasma nitridation at low temperature

Yukio Fukuda, Hiroshi Okamoto, Takuro Iwasaki, Yohei Otani, and Toshiro Ono

Appl. Phys. Lett. 99, 132907 (2011); http://dx.doi.org/10.1063/1.3647621 (3 pages)

Online Publication Date: 30 September 2011

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We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeNx/p-Ge fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The nitridation temperature is found to be a critical parameter in improving the finally obtained GeNx/Ge interface properties. The GeNx/Ge formed at room temperature and treated by PMA at 400 °C exhibits the best interface properties with an interface trap density of 1 × 1011 cm−2 eV−1. The GeNx/Ge interface is unpinned and the Fermi level at the Ge surface can move from the valence band edge to the conduction band edge.
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81.65.Rv Passivation
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
52.77.-j Plasma applications
76.40.+b Diamagnetic and cyclotron resonances
81.40.Gh Other heat and thermomechanical treatments
73.20.At Surface states, band structure, electron density of states
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