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26 Sep 2011

Volume 99, Issue 13, Articles (13xxxx)

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Appl. Phys. Lett. 99, 131101 (2011); http://dx.doi.org/10.1063/1.3641907 (3 pages)

Linas Minkevičius, Vincas Tamošiūnas, Irmantas Kašalynas, Dalius Seliuta, Gintaras Valušis, Alvydas Lisauskas, Sebastian Boppel, Hartmut G. Roskos, and Klaus Köhler
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Inelastic electron tunneling spectroscopy of HfO2 gate stacks: A study based on first-principles modeling

E. Scalise, M. Houssa, G. Pourtois, V. V. Afanas’ev, and A. Stesmans

Appl. Phys. Lett. 99, 132101 (2011); http://dx.doi.org/10.1063/1.3644158 (3 pages)

Online Publication Date: 26 September 2011

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A first-principles modeling approach is used to investigate the vibrational properties of HfO2. The calculated phonon density of states is compared to experimental results obtained from inelastic electron tunneling spectroscopy (IETS) of various metal-oxide-semiconductor devices with HfO2 gate stacks. This comparison provides deep insights into the nature of the signatures of the complicated IETS spectra and provides valuable structural information about the gate stack, such as the possible presence of oxygen vacancies in jet-vapour deposited HfO2. Important structural differences between the interface of atomic-layer or molecular-beam deposited HfO2 and the Si substrate are also revealed.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
73.20.At Surface states, band structure, electron density of states

Surface barrier height lowering at above 540 K in AlInN/AlN/GaN heterostructures

Md. Tanvir Hasan, Hirokuni Tokuda, and Masaaki Kuzuhara

Appl. Phys. Lett. 99, 132102 (2011); http://dx.doi.org/10.1063/1.3644161 (3 pages)

Online Publication Date: 28 September 2011

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Hall mobility (μH) and two dimensional electron gas density (ns) have been measured from 77 up to 973 K in AlInN/AlN/GaN heterostructures, where the atmospheric condition is changed as measured in vacuum and air. The μH decreases monotonically with increasing the temperature. The characteristic feature is observed in ns that it is almost constant up to around 540 K and shows sudden increase at higher temperatures when measured in the vacuum, while it is almost constant measured in the air. The surface barrier lowering originated from the decomposition of the surface oxide layer on AlInN is proposed as the most probable mechanism for the increase in ns.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.My Galvanomagnetic and other magnetotransport effects

Enhancement of magnetoresistance by ultra-thin Zn wüstite layer

Yoshihiko Fuji, Michiko Hara, Hiromi Yuasa, Shuichi Murakami, and Hideaki Fukuzawa

Appl. Phys. Lett. 99, 132103 (2011); http://dx.doi.org/10.1063/1.3644470 (3 pages)

Online Publication Date: 29 September 2011

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We have investigated a hybrid magnetic material composed of ultra-thin oxide spin-filtering layer/ferromagnetic layer (FML) for magnetoresistance (MR) enhancement. Using Zn-Fe oxide/Fe50Co50 as a free layer in current-perpendicular-to-plane giant magnetoresistive films, the MR ratio and ΔRA (the change of resistance area product) were enhanced to 26.0% and 52 mΩ μm2 at a small RA (resistance area product) of about 0.2 Ω μm2, respectively. Structural analysis revealed that the Zn wüstite structure is responsible for the enhancement of the MR ratio, and spin-polarization of wüstite/FML is higher than that of spinel ferrite/FML.
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75.47.De Giant magnetoresistance
75.50.Bb Fe and its alloys
75.50.Gg Ferrimagnetics
75.50.Pp Magnetic semiconductors
75.70.Ak Magnetic properties of monolayers and thin films
72.15.Gd Galvanomagnetic and other magnetotransport effects

Investigating the improvement of resistive switching trends after post-forming negative bias stress treatment

Hsueh-Chih Tseng, Ting-Chang Chang, Jheng-Jie Huang, Po-Chun Yang, Yu-Ting Chen, Fu-Yen Jian, S. M. Sze, and Ming-Jinn Tsai

Appl. Phys. Lett. 99, 132104 (2011); http://dx.doi.org/10.1063/1.3645004 (3 pages) | Cited 5 times

Online Publication Date: 29 September 2011

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This paper investigates the improvement of resistive switching trends after post-forming negative bias stress treatment of a Pt/Yb2O3/TiN device that has undergone positive bias forming process for activation. After the treatment, characteristics of the conductive filament, such as the temperature dependence of resistivity and transition mechanism, undergo changes. Furthermore, this treatment causes the conductive filament to transform from being primarily composed of vacancies to being metallic Yb dominant, which not only reduces operation voltages such as Vset and Vreset but also improves the on/off ratio. In reliability tests, the device has stable retention.
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84.30.Sk Pulse and digital circuits

Charge transport in hierarchical α-Fe2O3 nanostructures

K. R. G. Karthik, H. K. Mulmudi, K. B. Jinesh, N. Mathews, C. H. Sow, Y. Z. Huang, and S. G. Mhaisalkar

Appl. Phys. Lett. 99, 132105 (2011); http://dx.doi.org/10.1063/1.3641903 (3 pages) | Cited 2 times

Online Publication Date: 30 September 2011

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Electronic properties of individual polycrystalline α-Fe2O3 nanojunctions have been evaluated. By measuring the space charge limited current, the electron mobilities of the nanorods and nanojunctions were estimated. The mobility of the individual nanojunctions was found to be significantly lower than the individual nanorods. The trend clearly associates with the presence of junctions and grain boundaries in the nanorods. Impedance spectroscopy analysis of individual nanojunctions has been carried out to distinguish between the effects of the grain boundaries and the nanojunctions.
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73.63.Bd Nanocrystalline materials
77.22.Jp Dielectric breakdown and space-charge effects
72.20.Ee Mobility edges; hopping transport
72.20.Fr Low-field transport and mobility; piezoresistance
61.72.Mm Grain and twin boundaries
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
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