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26 Sep 2011

Volume 99, Issue 13, Articles (13xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 99, 131101 (2011); http://dx.doi.org/10.1063/1.3641907 (3 pages)

Linas Minkevičius, Vincas Tamošiūnas, Irmantas Kašalynas, Dalius Seliuta, Gintaras Valušis, Alvydas Lisauskas, Sebastian Boppel, Hartmut G. Roskos, and Klaus Köhler
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Heat recovery mechanism in the excitation of radiative polaritons by broadband infrared radiation in thin oxide films

Anita J. Vincent-Johnson, Kyle A. Vasquez, John E. Bridstrup, Andrew E. Masters, Xiaofeng Hu, and Giovanna Scarel

Appl. Phys. Lett. 99, 131901 (2011); http://dx.doi.org/10.1063/1.3643464 (3 pages) | Cited 2 times

Online Publication Date: 26 September 2011

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This work probes radiative polaritons in thin oxide layers as a mean to capture and absorb broadband infrared radiation and transform it into heat. A heat recovery mechanism, based on the Seebeck effect, is used as the tool of the investigation. Heat production challenges the current understanding which views the excitation of radiative polaritons as only accompanied by the emission of electromagnetic radiation. The heat recovery mechanism presented here can inspire the design of infrared energy harvesting devices, similar to photovoltaic cells, and other devices to convert energy from a wide range of the electromagnetic radiation spectrum using thermoelectric power generators.
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73.50.Lw Thermoelectric effects
72.20.Pa Thermoelectric and thermomagnetic effects
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.20.nb Photothermal effects
73.61.Ng Insulators

Phosphorus ion implantation and annealing induced n-type conductivity and microstructure evolution in ultrananocrystalline diamond films

X. J. Hu, J. S. Ye, H. Hu, X. H. Chen, and Y. G. Shen

Appl. Phys. Lett. 99, 131902 (2011); http://dx.doi.org/10.1063/1.3641458 (3 pages) | Cited 5 times

Online Publication Date: 26 September 2011

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We report n-type conductivity in phosphorus ion implanted ultrananocrystalline diamond films annealed at 800 °C and above. The amorphous carbon transits to diamond with an increase of stress after 900 °C annealing, which exhibits lower resistivity with Hall mobility of 143 cm2/Vs. After 1000 °C annealing, the diamond transits to amorphous carbon with the stress release, which has higher carrier concentration and lower Hall mobility. Both P+-implanted nano-sized diamond grains and amorphous carbon give contributions to the n-type conductivity in the films. The microstructure evolution and electrical properties are relative to the hydrogen diffusion and desorption under high temperature annealing.
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73.61.Le Other inorganic semiconductors
73.63.Bd Nanocrystalline materials
61.72.Cc Kinetics of defect formation and annealing
61.72.up Other materials
72.20.My Galvanomagnetic and other magnetotransport effects
68.43.Nr Desorption kinetics

Ellipsometric demonstration of the existence of a strong correlation between size distribution and optical responses of silicon nanoclusters in a nitride matrix

A.-S. Keita, A. En Naciri, F. Delachat, M. Carrada, G. Ferblantier, and A. Slaoui

Appl. Phys. Lett. 99, 131903 (2011); http://dx.doi.org/10.1063/1.3644131 (3 pages) | Cited 1 time

Online Publication Date: 27 September 2011

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We report on ellipsometric study of the influence of size distribution (SD) of silicon nanoclusters (Si-ncs) in a nitride matrix on their optical responses. The latter are extracted by using a modified Maxwell-Garnett theory that explicitly takes into account inhomogeneous broadening of the Si-ncs. The effects of the size dispersion (σ) and shape (Gaussian or lognormal) of the SD are investigated. It is evidenced that the value of σ may substantially change the whole line shapes of the Si-ncs dielectric functions. We also show that a Gaussian SD may lead to somewhat different properties as compared to the lognormal one.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
02.50.Cw Probability theory
07.60.Fs Polarimeters and ellipsometers
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Size-dependent model for thin film and nanowire thermal conductivity

Alan J. H. McGaughey, Eric S. Landry, Daniel P. Sellan, and Cristina H. Amon

Appl. Phys. Lett. 99, 131904 (2011); http://dx.doi.org/10.1063/1.3644163 (3 pages) | Cited 11 times

Online Publication Date: 27 September 2011

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We present an analytical model for the size-dependence of thin film and nanowire thermal conductivity and compare the predictions to experimental measurements on silicon nanostructures. The model contains no fitting parameters and only requires the bulk lattice constant, bulk thermal conductivity, and an acoustic phonon speed as inputs. By including the mode-dependence of the phonon lifetimes resulting from phonon-phonon and phonon-boundary scattering, the model captures the approach to the bulk thermal conductivity of the experimental data better than gray models based on a single lifetime.
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66.70.Df Metals, alloys, and semiconductors
68.55.J- Morphology of films
68.60.Dv Thermal stability; thermal effects
63.20.kg Phonon-phonon interactions
63.22.Dc Free films
63.22.Gh Nanotubes and nanowires

Multiscale element mapping of buried structures by ptychographic x-ray diffraction microscopy using anomalous scattering

Yukio Takahashi, Akihiro Suzuki, Nobuyuki Zettsu, Yoshiki Kohmura, Kazuto Yamauchi, and Tetsuya Ishikawa

Appl. Phys. Lett. 99, 131905 (2011); http://dx.doi.org/10.1063/1.3644396 (3 pages) | Cited 5 times

Online Publication Date: 28 September 2011

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We propose an element mapping technique of nano-meso-microscale structures buried within large and/or thick objects by ptychographic x-ray diffraction microscopy using anomalous scattering. We performed quantitative imagings of both the electron density and Au element of Au/Ag nanoparticles at the pixel resolution of better than 10 nm in a field of view larger than 5 × 5 μm2 by directly phasing ptychographic coherent diffraction patterns acquired at two x-ray energies below the Au L3 edge. This method provides us with multiscale structural and elemental information for understanding the element/property relationship linking nanoscale structures to macroscopic functional properties in material and biological systems.
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81.07.Bc Nanocrystalline materials
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
73.63.Bd Nanocrystalline materials
78.70.Ck X-ray scattering

Controlled positions and kinetic analysis of spontaneous tin whisker growth

Chien-Hao Su, Hao Chen, Hsin-Yi Lee, and Albert T. Wu

Appl. Phys. Lett. 99, 131906 (2011); http://dx.doi.org/10.1063/1.3643472 (3 pages)

Online Publication Date: 28 September 2011

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This study achieved controlling the positions of spontaneous growth of tin whiskers. We surmounted the unpredictable growing nature of such whiskers and performed accurately quantitative analyses of the growth kinetics and yielded precise measurement of the growth rate. Furthermore, using synchrotron radiation x-ray, this study determined the stress variations in conjunction with whisker growth that fitted appropriately to the model. Accordingly, the results could address the debate held for decades and prove that forming a surface oxide layer is one of the required and necessary conditions for controlling the positions of spontaneous growth of tin whiskers.
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68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
82.20.Pm Rate constants, reaction cross sections, and activation energies
07.85.Qe Synchrotron radiation instrumentation

A thermochromic low-emittance coating: Calculations for nanocomposites of In2O3:Sn and VO2

S.-Y. Li, G. A. Niklasson, and C. G. Granqvist

Appl. Phys. Lett. 99, 131907 (2011); http://dx.doi.org/10.1063/1.3641869 (3 pages) | Cited 2 times

Online Publication Date: 28 September 2011

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Calculations based on the Bruggeman effective medium theory were applied to thin films comprising a heavily doped wide band gap semiconductor (specifically In2O3:Sn (ITO)) and VO2. Films with ∼20 vol. % of VO2 can combine a 10% thermochromic modulation of the solar energy throughput with a luminous transmittance of 50%–60% and low thermal emittance. The maximum thermochromic modulation is ∼13% and occurs at ∼35 vol. % VO2. Coatings of ITO-VO2 are of interest for energy efficient fenestration.
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68.55.ag Semiconductors
78.20.nb Photothermal effects
78.66.Li Other semiconductors
78.67.Sc Nanoaggregates; nanocomposites

Photoluminescence due to inelastic exciton-exciton scattering in ZnMgO-alloy thin film

C. H. Chia, J. N. Chen, and Y. M. Hu

Appl. Phys. Lett. 99, 131908 (2011); http://dx.doi.org/10.1063/1.3646116 (3 pages) | Cited 1 time

Online Publication Date: 28 September 2011

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We studied the photoluminescence of ZnMgO thin film, grown by the radiofrequency sputtering method, as a function of excitation intensity and temperature. As the excitation intensity increases, a nonlinear emission band caused by the radiative recombination of the inelastic exciton-exciton scattering was detected at low temperature. We found that the inelastic exciton-exciton scattering process can only persist up to T ∼ 260 K. The nonlinear emission band observed at room temperature is due to the radiative recombination of the electron-hole plasma.
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78.55.Et II-VI semiconductors
71.35.-y Excitons and related phenomena
78.66.Hf II-VI semiconductors
81.05.Dz II-VI semiconductors
81.15.Cd Deposition by sputtering
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Evidence of lattice tilt and slip in m-plane InGaN/GaN heterostructure

Shunji Yoshida, Toshiya Yokogawa, Yasuhiko Imai, Shigeru Kimura, and Osami Sakata

Appl. Phys. Lett. 99, 131909 (2011); http://dx.doi.org/10.1063/1.3644978 (3 pages) | Cited 9 times

Online Publication Date: 29 September 2011

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Using high-resolution microbeam x-ray diffraction and cross-section transmission electron microscopy, we investigated in-plane anisotropy resulting from epilayer lattice tilts in heteroepitaxial InGaN on a m-plane GaN substrate. The in-plane structure consists of two lattice tilts along the [11math0] direction corresponding to (10math0) and (0math10) slip planes inclined at roughly 60° from the m-plane. Based on the Peierls-Nabarro model, we explain this structure by proposing a slip system via the {10math0} prism plane with 〈11math0〉-type slip directions.
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61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
61.72.Mm Grain and twin boundaries
68.55.ag Semiconductors
62.20.F- Deformation and plasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations

The curious case of thin-body Ge crystallization

R. Duffy, M. Shayesteh, B. McCarthy, A. Blake, M. White, J. Scully, R. Yu, A.-M. Kelleher, M. Schmidt, N. Petkov, L. Pelaz, and L. A. Marqués

Appl. Phys. Lett. 99, 131910 (2011); http://dx.doi.org/10.1063/1.3643160 (3 pages) | Cited 2 times

Online Publication Date: 29 September 2011

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The authors investigate the templated crystallization of thin-body Ge fin structures with high aspect ratios. Experimental variables include fin thickness and thermal treatments, with fin structures oriented in the 〈110〉 direction. Transmission electron microscopy determined that various crystal defects form during crystallization of amorphous Ge regions, most notably {111} stacking faults, twin boundaries, and small crystallites. In all cases, the nature of the defects is dependent on the fin thickness and thermal treatments applied. Using a standard 600 °C rapid-thermal-anneal, Ge structures with high aspect ratios crystallize with better crystal quality and fewer uncured defects than the equivalent Si case, which is a cause for optimism for thin-film Ge devices.
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64.70.kg Semiconductors
61.72.Mm Grain and twin boundaries
61.72.Nn Stacking faults and other planar or extended defects

Buckling of poly(methyl methacrylate) in stimulus-responsive shape recovery

Yong Zhao, Chang Chun Wang, Wei Min Huang, and Hendra Purnawali

Appl. Phys. Lett. 99, 131911 (2011); http://dx.doi.org/10.1063/1.3645005 (3 pages) | Cited 2 times

Online Publication Date: 30 September 2011

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We investigate buckling phenomenon during shape recovery in a poly(methyl methacrylate) upon immersing in ethanol (chemo-responsive) and heating (thermo-responsive). The underlying mechanism is revealed and the influential factors are discussed. Such buckling phenomenon is generic and applicable to all materials during shape recovery when certain conditions (as discussed here) are satisfied.
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81.40.Lm Deformation, plasticity, and creep
62.20.mq Buckling
61.41.+e Polymers, elastomers, and plastics

Dynamic mechanical behavior of magnetorheological nanocomposites filled with carbon nanotubes

R. Li and L. Z. Sun

Appl. Phys. Lett. 99, 131912 (2011); http://dx.doi.org/10.1063/1.3645627 (3 pages) | Cited 1 time

Online Publication Date: 30 September 2011

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Magnetorheological (MR) elastomer composites with the addition of multi-walled carbon nanotubes are developed. The dynamic mechanical responses of the MR nanocomposites to applied magnetic fields are investigated through dynamic mechanical analysis. It is found that a small amount of carbon nanotubes can effectively improve the mechanical performance of conventional MR elastomers. The MR nanocomposites have shown not only large jumps in zero-field dynamic stiffness and damping, but also higher magnetic-field-induced improvement in these dynamic mechanical properties.
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81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
75.75.-c Magnetic properties of nanostructures
81.70.Bt Mechanical testing, impact tests, static and dynamic loads
62.23.Pq Composites (nanosystems embedded in a larger structure)

Multi-beam generations at pre-designed directions based on anisotropic zero-index metamaterials

Qiang Cheng, Wei Xiang Jiang, and Tie Jun Cui

Appl. Phys. Lett. 99, 131913 (2011); http://dx.doi.org/10.1063/1.3645628 (3 pages) | Cited 6 times

Online Publication Date: 30 September 2011

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We show that anisotropic zero-index metamaterials (AZIMs) can be utilized to realize single- and multiple-beam generations in the pre-designed directions. It has been shown that a high-gain beam will be generated when a line source is located in an AZIM, directing to the AZIM principle-axis direction. By rotating the principle axis to an arbitrary angle, the beam direction is adjusted correspondingly to that angle. Therefore, multi-beams are generated at the desired directions by designing differently oriented AZIMs. An experiment is carried out to validate this property, which shows good agreement to the theoretical analysis.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation
81.05.Xj Metamaterials for chiral, bianisotropic and other complex media

Diffusion behavior of dual capping layers in TiN/LaN/AlN/HfSiOx/Si stack

X. H. Zheng, A. P. Huang, Z. S. Xiao, M. Wang, X. Y. Liu, Z. W. Wu, and Paul K. Chu

Appl. Phys. Lett. 99, 131914 (2011); http://dx.doi.org/10.1063/1.3643517 (3 pages) | Cited 1 time

Online Publication Date: 30 September 2011

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The diffusion behavior and interlayer interactions in the LaN/AlN dual capping layers of TiN/LaN/AlN/HfSiOx/Si stacks are investigated. Depth profiling and chemical state analysis performed after partial removal of the TiN gate indicate that Al-O replaces Al-N forming an Al-O dipole layer between the TiN and high-k layer after annealing. Meanwhile, La diffuses into HfSiOx and the La-based dipole is controlled by suppression of O diffusion to the bottom layer. Our results reveal that the properties of the TiN/LaN/AlN/HfSiOx/Si stack can be improved significantly by the dual capping layers.
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66.30.Ny Chemical interdiffusion; diffusion barriers
81.40.Gh Other heat and thermomechanical treatments
77.55.df For silicon electronics
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

InAs quantum dots and quantum wells grown on stacking-fault controlled InP nanowires with wurtzite crystal structure

Kenichi Kawaguchi, Magnus Heurlin, David Lindgren, Magnus T. Borgström, Martin Ek, and Lars Samuelson

Appl. Phys. Lett. 99, 131915 (2011); http://dx.doi.org/10.1063/1.3646386 (3 pages) | Cited 2 times

Online Publication Date: 30 September 2011

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Heteroepitaxial growth of InAs was investigated on sidewalls of InP nanowires (NWs) using metal-organic vapor phase epitaxy. InAs quantum wells (QWs) with smooth surface were formed on the InP NWs having perfect wurtzite phase structure. On the other hand, InAs quantum dots (QDs) were formed on wurtzite InP NWs purposely introduced with stacking-fault segments. Photoluminescence from single NWs attributed to both QWs and QDs was observed.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.07.Ta Quantum dots
81.07.St Quantum wells
81.05.Ea III-V semiconductors
78.67.Hc Quantum dots
81.15.Kk Vapor phase epitaxy; growth from vapor phase
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