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3 Oct 2011

Volume 99, Issue 14, Articles (14xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 99, 141901 (2011); http://dx.doi.org/10.1063/1.3644948 (3 pages)

G. Kozlowski, P. Zaumseil, M. A. Schubert, Y. Yamamoto, J. Bauer, J. Matejova, T. Schulli, B. Tillack, and T. Schroeder
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Comprehensive control of optical polarization anisotropy in semiconducting nanowires

Lei Fang, Xianwei Zhao, Yi-Hsin Chiu, Dongkyun Ko, Kongara M. Reddy, Thomas R. Lemberger, Nitin P. Padture, Fengyuan Yang, and Ezekiel Johnston-Halperin

Appl. Phys. Lett. 99, 141101 (2011); http://dx.doi.org/10.1063/1.3631630 (3 pages) | Cited 1 time

Online Publication Date: 3 October 2011

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The demonstration of strong photoluminescence polarization anisotropy in semiconducting nanowires embodies both technological promise and scientific challenge. Here, we present progress on both fronts through the study of the photoluminescence polarization anisotropy of randomly oriented nanowire ensembles in materials without/with crystalline anisotropy, small/wide bandgap, and both III-V/II-VI chemistry (InP/ZnO nanowires, respectively). Comprehensive control of the polarization anisotropy is realized by dielectric matching with conformally deposited Ta2O5 (dielectric ratios of 9.6:4.41 and 4.0:4.41 for InP and ZnO, respectively). After dielectric matching, the polarization anisotropy of the nanowire ensembles is reduced by 86% for InP:Ta2O5 and 84% for ZnO:Ta2O5.
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78.67.Uh Nanowires
81.07.Gf Nanowires
77.22.Ej Polarization and depolarization
78.55.Cr III-V semiconductors
78.55.Et II-VI semiconductors

Two electric-field components measurement using a 2-port pigtailed electro-optic sensor

Yann Gaeremynck, Gwenaël Gaborit, Lionel Duvillaret, Mickaël Ruaro, and Frédéric Lecoche

Appl. Phys. Lett. 99, 141102 (2011); http://dx.doi.org/10.1063/1.3646103 (3 pages)

Online Publication Date: 3 October 2011

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Based on an isotropic electro-optic crystal, a two-port pigtailed electro-optic sensor has been built. The probe allows to measure two orthogonal components of the ambient electric field. The sensor intrinsically presents a temperature-dependent free response. The two measured electric field components are orthogonal to the sensor revolution axis, leading to a transverse electro-optic probe. Magnitude and orientation of the electric field are measured simultaneously with an accuracy of 0.5 dB and 2°, respectively. The rejection of orthogonal components to the electric field vector reaches 30 dB.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)

Multijoule scaling of laser-induced condensation in air

M. Petrarca, S. Henin, K. Stelmaszczyk, S. Bock, S. Kraft, U. Schramm, C. Vaneph, A. Vogel, J. Kasparian, R. Sauerbrey, K. Weber, L. Wöste, and J.-P. Wolf

Appl. Phys. Lett. 99, 141103 (2011); http://dx.doi.org/10.1063/1.3646397 (3 pages) | Cited 5 times

Online Publication Date: 3 October 2011

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Using 100 TW laser pulses, we demonstrate that laser-induced nanometric particle generation in air increases much faster than the beam-averaged incident intensity. This increase is due to a contribution from the photon bath, which adds up with the previously identified one from the filaments and becomes dominant above 550 GW/cm2. It appears related to ozone formation via multiphoton dissociation of the oxygen molecules and demonstrates the critical need for further increasing the laser energy in view of macroscopic effects in laser-induced condensation.
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92.60.Mt Particles and aerosols
92.60.Ta Electromagnetic wave propagation

Electric quadrupole excitation in surface plasmon resonance of metallic composite nanohole arrays

Shan Wu, Jianqiang Liu, Lin Zhou, Qianjin Wang, Yi Zhang, Guodong Wang, and Yongyuan Zhu

Appl. Phys. Lett. 99, 141104 (2011); http://dx.doi.org/10.1063/1.3643036 (3 pages) | Cited 6 times

Online Publication Date: 5 October 2011

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We present an experimental and theoretical study on the composite nanostructures composed of the LT-shaped metallic nanohole arrays. Multiple resonance transmission peaks are observed in the optical transmission spectra. By analyzing their electric field distributions on the interface, we infer the electric dipole and the electric quadrupole plasmonic resonances contribute to these transmission peaks. The electric quadrupole is a subradiant mode, which cannot be directly excited by the incident light. Here, we demonstrate that the surface plasmon polaritons can excite the electric quadrupole plasmonic resonance mode through the near-field interaction.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.22.Lp Collective excitations
73.63.Bd Nanocrystalline materials
78.68.+m Optical properties of surfaces
78.67.Sc Nanoaggregates; nanocomposites
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)

All-optical switching via tunable coupling of nanocomposite photonic crystal microcavities

Zhiqiang Li, Xiaoyong Hu, Yingbo Zhang, Yulan Fu, Hong Yang, and Qihuang Gong

Appl. Phys. Lett. 99, 141105 (2011); http://dx.doi.org/10.1063/1.3647571 (3 pages)

Online Publication Date: 5 October 2011

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We report a low-power all-optical switching in a two-dimensional nanocomposite photonic crystal microcavity made of poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] doped with gold nanoparticles, realized based on surface plasmon resonance enhancing nonlinearity and dynamically tunable coupling of two asymmetric defect modes. Under excitation around the surface plasmon resonance peak, the value of the nonlinear susceptibility of the nanocomposite material reaches the order of 10−6 esu. A threshold photon energy as low as 700 fJ and an ultrahigh switching efficiency of 90% are realized simultaneously.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Gn Optical waveguides and couplers
42.70.Qs Photonic bandgap materials

Room temperature direct gap electroluminescence from Ge/Si0.15Ge0.85 multiple quantum well waveguide

Papichaya Chaisakul, Delphine Marris-Morini, Giovanni Isella, Daniel Chrastina, Nicolas Izard, Xavier Le Roux, Samson Edmond, Jean-René Coudevylle, and Laurent Vivien

Appl. Phys. Lett. 99, 141106 (2011); http://dx.doi.org/10.1063/1.3647572 (3 pages) | Cited 13 times

Online Publication Date: 5 October 2011

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We report room temperature direct gap electroluminescence (EL) from a Ge/Si0.15Ge0.85 multiple quantum well (MQW) waveguide. The excitonic direct gap transition and the dependence of the EL intensity on the injection currents and temperature are clearly observed. EL from the Ge/SiGe MQWs is shown to have a transverse-electric polarization. These results demonstrate the strong potential of the Ge/Si0.15Ge0.85 MQWs in terms of the realization of a monolithically integrated light source on the Si platform.
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42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers
78.60.Fi Electroluminescence

Determination of spatio-spectral properties of individual modes within multimode waveguides using spectrally resolved near-field scanning optical microscopy

S. A. Berry, J. C. Gates, and W. S. Brocklesby

Appl. Phys. Lett. 99, 141107 (2011); http://dx.doi.org/10.1063/1.3647620 (3 pages)

Online Publication Date: 5 October 2011

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Near-field scanning optical microscopy (NSOM) is used to measure the relative group velocity and relative amplitude of modes in a multimode waveguide with an incoherent broadband light source. A spectrally resolving NSOM probe was used to observe localized spectral interference in the multimode waveguide. Fourier analysis was used to identify temporal delays. The modes can be further identified by their temporally discriminated spatial profile which is based on the product of their fields. This data provide the relative amplitude and phases of the modes.
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42.79.Gn Optical waveguides and couplers
07.79.Fc Near-field scanning optical microscopes
42.82.Et Waveguides, couplers, and arrays

Microfabricated optofluidic ring resonator structures

Kee Scholten, Xudong Fan, and Edward. T. Zellers

Appl. Phys. Lett. 99, 141108 (2011); http://dx.doi.org/10.1063/1.3645629 (3 pages) | Cited 3 times

Online Publication Date: 5 October 2011

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We describe the fabrication and preliminary optical characterization of rugged, Si-micromachined optofluidic ring resonator (μOFRR) structures consisting of thin-walled SiOx cylinders with expanded midsections designed to enhance the three-dimensional confinement of whispering gallery modes (WGMs). These μOFRR structures were grown thermally at wafer scale on the interior of Si molds defined by deep-reactive-ion etching and pre-treated to reduce surface roughness. Devices 85-μm tall with 2-μm thick walls and inner diameters ranging from 50 to 200 μm supported pure-mode WGMs with Q-factors >104 near 985 nm. Advantages for eventual vapor detection in gas chromatographic microsystems are highlighted.
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42.79.-e Optical elements, devices, and systems
07.10.Cm Micromechanical devices and systems

Dual ground-state pulse generation from a passively mode-locked InAs/InGaAs quantum dot laser

Charis Mesaritakis, Christos Simos, Hercules Simos, Igor Krestnikov, and Dimitris Syvridis

Appl. Phys. Lett. 99, 141109 (2011); http://dx.doi.org/10.1063/1.3643523 (3 pages) | Cited 1 time

Online Publication Date: 5 October 2011

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In this paper, we present experimental results related to tunable dual wavelength passive mode locking of two independent ground state sub-bands in a multi section InAs/InGaAs quantum dot laser. The emission of these sub-bands is related to gain suppression at the center of the ground state emission, whereas their wavelength separation is tunable with injection current. Through the mechanism of passive mode locking two independent pulses were obtained, with typical pulse width in the order of 17 ps.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking

Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

K. J. Cheetham, A. Krier, I. P. Marko, A. Aldukhayel, and S. J. Sweeney

Appl. Phys. Lett. 99, 141110 (2011); http://dx.doi.org/10.1063/1.3646910 (3 pages) | Cited 1 time

Online Publication Date: 5 October 2011

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Mid-infrared light emitting diodes based on the pentanary alloy GaInAsSbP have been engineered to provide a favourable band structure for the suppression of non-radiative Auger recombination which is dominant in narrow band gap III-V materials. Hydrostatic pressure measurements at room temperature and at 100 K were used to tune the band gap towards resonance with the spin-orbit band gap. Analysis of the resulting electroluminescence confirms that the non-radiative Auger recombination process involving the spin-orbit-split-off-band is suppressed under ambient conditions.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
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Highly efficient excitation and detection of whispering gallery modes in a dye-doped microsphere using a microstructured optical fiber

Alexandre François, Kristopher J. Rowland, and Tanya M. Monro

Appl. Phys. Lett. 99, 141111 (2011); http://dx.doi.org/10.1063/1.3648109 (3 pages) | Cited 2 times

Online Publication Date: 6 October 2011

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A technique for the excitation of whispering gallery modes (WGMs) has been demonstrated using a dye-doped microsphere positioned onto the tip of a suspended core microstructured optical fiber. With this configuration, we have shown that both the excitation and collection efficiency of the WGMs modulated fluorescence spectra of the dye are greatly improved compared to a more conventional excitation scheme; an overall efficiency increase by a factor of 200 is demonstrated. It is also shown that positioning the resonator onto the fiber tip does not impact its sensitivity, providing a compact and robust architecture for applications such as localized in-vivo/vitro biosensing.
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42.81.Pa Sensors, gyros
42.81.Wg Other fiber-optical devices
07.60.Vg Fiber-optic instruments

Multi-channel terahertz grating spectrometer with quantum-cascade laser and microbolometer array

R. Eichholz, H. Richter, S. G. Pavlov, M. Wienold, L. Schrottke, R. Hey, H. T. Grahn, and H.-W. Hübers

Appl. Phys. Lett. 99, 141112 (2011); http://dx.doi.org/10.1063/1.3645635 (3 pages) | Cited 1 time

Online Publication Date: 6 October 2011

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We report on a terahertz absorption spectrometer, which combines a grating monochromator, a quantum-cascade laser (QCL), and a microbolometer camera. The emission modes of the laser are spectrally resolved by the monochromator and imaged onto the camera. An absorption cell is placed between the QCL and the monochromator, and the absorption spectrum of methanol around 3.4 THz is measured by integrating simultaneously the signal of each of its Fabry-Pérot modes as a function of the laser driving current. The frequency coverage of the spectrometer is about 20 GHz.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Multi-component nanocomposite for all-optical switching applications

Yingbo Zhang, Xiaoyong Hu, Hong Yang, and Qihuang Gong

Appl. Phys. Lett. 99, 141113 (2011); http://dx.doi.org/10.1063/1.3646376 (3 pages) | Cited 1 time

Online Publication Date: 6 October 2011

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We report a multi-component nanocomposite material with large and ultrafast third-order nonlinearity, made of poly(3-hexylthiophene) doped with 1-(3-methoxycarbonyl)propyl-1-phenyl-(6,6)C61 and silver nanoparticles. Large nonlinear refractive index of the order of 10−7 cm2/W is reached by combining surface plasmon resonance enhancing nonlinearity and local-field enhancing nonlinearity. An ultrafast response time of 33.6 ps is achieved due to the enhanced charge transfer and exciton-exciton annihilation associated with surface plasmon resonance. An ultrafast photonic crystal all-optical switching with an ultralow pump intensity of 70 KW/cm2 is also realized.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.70.Qs Photonic bandgap materials
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Influence of Mg-doped barriers on semipolar (20math1) multiple-quantum-well green light-emitting diodes

Chia-Yen Huang, Qimin Yan, Yuji Zhao, Kenji Fujito, Daniel Feezell, Chris G. Van de Walle, James S. Speck, Steven P. DenBaars, and Shuji Nakamura

Appl. Phys. Lett. 99, 141114 (2011); http://dx.doi.org/10.1063/1.3647560 (3 pages) | Cited 2 times

Online Publication Date: 7 October 2011

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We report the effects of Mg doping in the barriers of semipolar (20math1) multiple-quantum-well light-emitting diodes (LEDs) with long emission wavelengths (>500 nm). With moderate Mg doping concentrations (3 × 1018–5 × 1018 cm−3) in the barriers, the output power was enhanced compared to those with undoped barriers, which suggests that hole transport in the active region is a limiting factor for device performance. Improved hole injection due to Mg doping in the barriers is demonstrated by dichromatic LED experiments and band diagram simulations. With Mg-doped AlGaN barriers, double-quantum-well LEDs with orange to red emission (λ > 600 nm) were also demonstrated.
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85.60.Jb Light-emitting devices
61.72.uj III-V and II-VI semiconductors

Terahertz quantum-cascade laser with active leaky-wave antenna

Amir A. Tavallaee, Benjamin S. Williams, Philip W. C. Hon, Tatsuo Itoh, and Qi-Sheng Chen

Appl. Phys. Lett. 99, 141115 (2011); http://dx.doi.org/10.1063/1.3648104 (3 pages) | Cited 3 times

Online Publication Date: 7 October 2011

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We report the demonstration of a one-dimensional waveguide for terahertz quantum-cascade (QC) lasers, which acts as a leaky-wave antenna and tailors laser radiation in one dimension to a directional beam. This scheme adapts microwave transmission-line metamaterial concepts to a planar structure realized in terahertz metal-metal waveguide technology. The active leaky-wave antenna is fed by a master oscillator QC-laser with a mode that propagates with an effective phase index smaller than unity, such that it radiates in the surface direction. The direction of emission of main beam is governed by the antenna dispersion characteristic. 25° of beam steering is observed as the lasing frequency of the QC-laser is varied from 2.65–2.81 THz.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
84.30.Ng Oscillators, pulse generators, and function generators
84.40.Az Waveguides, transmission lines, striplines

Properties of unrelaxed InAs1−XSbX alloys grown on compositionally graded buffers

G. Belenky, D. Donetsky, G. Kipshidze, D. Wang, L. Shterengas, W. L. Sarney, and S. P. Svensson

Appl. Phys. Lett. 99, 141116 (2011); http://dx.doi.org/10.1063/1.3650473 (3 pages) | Cited 5 times

Online Publication Date: 7 October 2011

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Unrelaxed InAs1−xSbx layers with lattice constants up to 2.1% larger than that of GaSb substrates were grown by molecular beam epitaxy on GaInSb and AlGaInSb compositionally graded buffer layers. The topmost section of the buffers was unrelaxed but strained. The in-plane lattice constant of the top buffer layer was grown to be equal to the lattice constant of unrelaxed and unstrained InAs1−xSbx with given X. The InAs0.56Sb0.44 layers demonstrate photoluminescence peak at 9.4 μm at 150 K. The minority carrier lifetime measured at 77 K for InAs0.8Sb0.2 was τ = 250 ns.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.ag Semiconductors
73.61.Ey III-V semiconductors
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors

Single-cycle terahertz pulses with >0.2 V/Å field amplitudes via coherent transition radiation

Dan Daranciang, John Goodfellow, Matthias Fuchs, Haidan Wen, Shambhu Ghimire, David A. Reis, Henrik Loos, Alan S. Fisher, and Aaron M. Lindenberg

Appl. Phys. Lett. 99, 141117 (2011); http://dx.doi.org/10.1063/1.3646399 (3 pages) | Cited 12 times

Online Publication Date: 7 October 2011

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We demonstrate terahertz pulses with field amplitudes exceeding 0.2 V/Å generated by coherent transition radiation. Femtosecond, relativistic electron bunches generated at the Linac Coherent Light Source are passed through a beryllium foil, and the emitted radiation is characterized as a function of the bunch duration and charge. Broadband pulses centered at a frequency of 10 THz with energies of 140 μJ are measured. These far-below-bandgap pulses drive a nonlinear optical response in a silicon photodiode, with which we perform nonlinear autocorrelations that yield information regarding the terahertz temporal profile. Simulations of the spatiotemporal profile agree well with experimental results.
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41.75.Ht Relativistic electron and positron beams
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
85.60.Dw Photodiodes; phototransistors; photoresistors
84.40.-x Radiowave and microwave (including millimeter wave) technology
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Generating intense ultrashort radiation by reflecting an ultrashort laser pulse from a thin target

Wenmin Zhang (张文敏) and M. Y. Yu (郁明阳)

Appl. Phys. Lett. 99, 141501 (2011); http://dx.doi.org/10.1063/1.3645630 (3 pages) | Cited 1 time

Online Publication Date: 3 October 2011

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Particle-in-cell simulation and analytical modeling demonstrate that the reflection of a single-cycle light pulse from a thin target can produce an ultrashort ultraintense electromagnetic field.
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52.38.Kd Laser-plasma acceleration of electrons and ions
52.65.Rr Particle-in-cell method

Density evolution measurement of hydrogen plasma in capillary discharge by spectroscopy and interferometry methods

D. G. Jang, M. S. Kim, I. H. Nam, H. S. Uhm, and H. Suk

Appl. Phys. Lett. 99, 141502 (2011); http://dx.doi.org/10.1063/1.3643134 (3 pages) | Cited 3 times

Online Publication Date: 5 October 2011

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Plasma density is one of the most important parameters for laser wakefield acceleration using a gas-filled capillary waveguide. We measured the evolving hydrogen plasma densities in capillary discharge by using two different diagnostics methods at the same time, i.e., the Stark-effect-based spectroscopy and the transverse interferometry methods. It was found that there is a rather large difference between two methods and the phenomenon is explained in view of self-absorption. The correlation was obtained and the result is quite useful for capillary-plasma-based laser wakefield acceleration research.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.80.Tn Other gas discharges
29.20.Ej Linear accelerators
52.25.-b Plasma properties
52.38.Kd Laser-plasma acceleration of electrons and ions

Microwave diagnostics of femtosecond laser-generated plasma filaments

J. Papeer, C. Mitchell, J. Penano, Y. Ehrlich, P. Sprangle, and A. Zigler

Appl. Phys. Lett. 99, 141503 (2011); http://dx.doi.org/10.1063/1.3643478 (3 pages) | Cited 2 times

Online Publication Date: 5 October 2011

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We present a simple non-intrusive experimental method allowing a complete single shot temporal measurement of laser produced plasma filament conductivity. The method is based on filament interaction with low intensity microwave radiation in a rectangular waveguide. The suggested diagnostics allow a complete single shot temporal analysis of filament plasma decay with resolution better than 0.3 ns and high spatial resolution along the filament. The experimental results are compared to numerical simulations, and an initial electron density of 7 × 1016 cm−3 and decay time of 3 ns are obtained.
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52.38.Hb Self-focussing, channeling, and filamentation in plasmas
52.25.Fi Transport properties
52.70.Gw Radio-frequency and microwave measurements
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Ionization wave propagation on a micro cavity plasma array

Alexander Wollny, Torben Hemke, Markus Gebhardt, Ralf Peter Brinkmann, Henrik Boettner, Jörg Winter, Volker Schulz-von der Gathen, Zhongmin Xiong, Mark J. Kushner, and Thomas Mussenbrock

Appl. Phys. Lett. 99, 141504 (2011); http://dx.doi.org/10.1063/1.3647978 (3 pages) | Cited 1 time

Online Publication Date: 6 October 2011

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Microcavity plasma arrays of inverse pyramidal cavities fabricated on p-Si wafers act as localized dielectric barrier discharges. When operated at atmospheric pressure in argon and excited with high voltage at 10 kHz, a strong interaction between individual cavities is observed leading to wave-like optical emission propagating along the surface of the array. This phenomenon is numerically investigated. The computed ionization wave propagates with a speed of 5 km/s, which agrees well with experiments. The wave propagation is due to the sequential drift of electrons followed by drift of ions between cavities seeded by photoemission of electrons by the plasma in adjacent cavities.
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52.30.-q Plasma dynamics and flow
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.50.Dg Plasma sources
52.65.-y Plasma simulation
52.80.Dy Low-field and Townsend discharges
52.80.Hc Glow; corona
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Compliant substrate versus plastic relaxation effects in Ge nanoheteroepitaxy on free-standing Si(001) nanopillars

G. Kozlowski, P. Zaumseil, M. A. Schubert, Y. Yamamoto, J. Bauer, J. Matejova, T. Schulli, B. Tillack, and T. Schroeder

Appl. Phys. Lett. 99, 141901 (2011); http://dx.doi.org/10.1063/1.3644948 (3 pages) | Cited 4 times

Online Publication Date: 3 October 2011

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We report on the structural characterization of Ge clusters selectively grown by chemical vapor deposition on free-standing 50 nm wide Si(001) nanopillars. Synchrotron based x-ray diffraction studies and transmission electron microscopy were performed to experimentally verify the nanoheteroepitaxy theory as a technique to grow high quality Ge on Si(001). Although the structure dimensions are comparable to the theoretical values required for the strain partitioning phenomenon, the compliant character of Si is not unambiguously proven. In consequence, the strain is relieved by nucleation of misfit dislocations at the Ge/Si interface. By gliding out of threading arms, high quality Ge nanostructures are achieved.
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81.05.Cy Elemental semiconductors
81.40.Lm Deformation, plasticity, and creep
81.07.Nb Molecular nanostructures
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.47.Fg Semiconductor surfaces

Picosecond carrier lifetimes in dilute GaInNAs grown on InP substrate

J. Mangeney, T. Laurent, M. Martin, J. C. Harmand, L. Travers, and O. Mauguin

Appl. Phys. Lett. 99, 141902 (2011); http://dx.doi.org/10.1063/1.3644954 (3 pages) | Cited 1 time

Online Publication Date: 3 October 2011

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We study the carrier relaxation dynamics in Ga1−yIny N0.03As0.97 layers grown on InP substrate by molecular beam epitaxy. This dilute nitride semiconductor is a potential candidate for ultrafast components such as photoconductive terahertz devices driven at 1.55 μm wavelength. Carrier lifetimes are measured by pump-probe experiments at 1550 nm wavelength and the shortest carrier lifetime is 2.6 ps under photoexcitation with ∼4.2 μJ/cm2. We observe two contributions in the differential transmittance decay. These contributions are discussed in terms of photocarrier recombination processes.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
84.40.-x Radiowave and microwave (including millimeter wave) technology
85.60.-q Optoelectronic devices

Wrinkles formation and evolution of nanoribbons with finite length on elastomeric substrate

Xue Feng, Binrui Qu, Bingwei Lu, Zhihua Zhao, and Xufei Fang

Appl. Phys. Lett. 99, 141903 (2011); http://dx.doi.org/10.1063/1.3645012 (3 pages)

Online Publication Date: 3 October 2011

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We report in situ observation of wrinkles formation and evolution of Si nanoribbons with finite length on elastomeric substrate via white light interferometer. The wrinkle originates from the middle of the nanoribbon, propagates symmetrically to the two ends, and finally reaches the stable configuration. The wavelength and amplitude will increase abruptly when the released strain exceeds the critical value. The interface interaction between Si nanoribbons and elastomeric substrate plays the key role for wrinkles formation.
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61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
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Structure of the InAlAs/InP interface by atomically resolved energy dispersive spectroscopy

Dmitri O. Klenov and Joshua M. O. Zide

Appl. Phys. Lett. 99, 141904 (2011); http://dx.doi.org/10.1063/1.3645632 (3 pages) | Cited 4 times

Online Publication Date: 3 October 2011

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The structure of epitaxially grown InAlAs/InP interfaces was studied using atomically resolved x-ray energy dispersive spectroscopy in scanning transmission electron microscopy. As and P sublattices show sharp termination on the interface. The In sublattice is continuous across the interface. The study has shown the depletion of the Al concentration at the interface; at the last atomic columns of the InAlAs, In occupancy is close to 100%, while Al occupancy is almost zero. A monolayer of InAs at the interface is consistent with substitution of As for P at the surface preceding growth.
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68.55.-a Thin film structure and morphology
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
68.35.Ct Interface structure and roughness
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