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3 Oct 2011

Volume 99, Issue 14, Articles (14xxxx)

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Appl. Phys. Lett. 99, 141901 (2011); http://dx.doi.org/10.1063/1.3644948 (3 pages)

G. Kozlowski, P. Zaumseil, M. A. Schubert, Y. Yamamoto, J. Bauer, J. Matejova, T. Schulli, B. Tillack, and T. Schroeder
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High-Q aluminum nitride Lamb wave resonators with biconvex edges

Chih-Ming Lin, Yun-Ju Lai, Jin-Chen Hsu, Yung-Yu Chen, Debbie G. Senesky, and Albert P. Pisano

Appl. Phys. Lett. 99, 143501 (2011); http://dx.doi.org/10.1063/1.3643153 (3 pages) | Cited 4 times

Online Publication Date: 3 October 2011

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A Lamb wave resonator utilizing an aluminum nitride (AlN) plate with biconvex edges to enhance the quality factor (Q) is demonstrated. The simulation results based on finite element analysis verify that the use of the biconvex edges, instead of the conventional flat edges, can efficiently confine mechanical energy in the AlN Lamb wave resonator. Specifically, the measured frequency response of a 491.8-MHz AlN Lamb wave resonator with biconvex edges yields a Q of 3280 which represents a 2.6× enhancement in Q over a 517.9-MHz Lamb wave resonator on the same AlN plate but with the suspended flat edges.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
02.70.Dh Finite-element and Galerkin methods

Thin film CdTe solar cells with an absorber layer thickness in micro- and sub-micrometer scale

Zhizhong Bai, Jun Yang, and Deliang Wang

Appl. Phys. Lett. 99, 143502 (2011); http://dx.doi.org/10.1063/1.3644160 (3 pages) | Cited 7 times

Online Publication Date: 3 October 2011

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CdTe thin film solar cell with an absorber layer as thin as 0.5 μm was fabricated. An efficiency of 7.9% was obtained for a 1-μm-thick CdTe solar cell. An increased intensity of deep recombination states in the band gap, which was responsible for the reduced open-circuit voltage and fill factor for ultra-thin solar cells, was induced due to the not-well-developed polycrystalline CdTe microstructure and the CdS/CdTe heterojunction and the presence of Cu in the back contact. The experimental results presented in this study demonstrated that 1-μm-thick absorber layer is thick enough to fabricate CdTe solar cell with a decent efficiency.
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88.40.hj Efficiency and performance of solar cells
88.40.jm Thin film III-V and II-VI based solar cells
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Hf II-VI semiconductors

Intrinsic reduction of ballistic hole current due to quantum mechanical coupling of heavy and light holes in p-type Si nanowire field effect transistors

Mincheol Shin

Appl. Phys. Lett. 99, 143503 (2011); http://dx.doi.org/10.1063/1.3644959 (3 pages)

Online Publication Date: 4 October 2011

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Rigorous quantum mechanical transport calculations based on the multi-band k · p Hamiltonian are performed in this work to show that the coupling of heavy and light holes (LHs) greatly reduces on-state hole current in ultra-scaled p-type Si nanowire FETs. If the coupling between the heavy and light holes is artificially suppressed, on-current of the p-type devices almost doubles and becomes comparable to that of n-type counterparts. It is found that the effect of the coupling on the hole transport is maximized at the channel width of around 5 nm.
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85.30.Tv Field effect devices
85.75.Hh Spin polarized field effect transistors
73.23.Ad Ballistic transport
72.20.Ht High-field and nonlinear effects
72.20.Fr Low-field transport and mobility; piezoresistance

Ultra-fast switching in solution processed quantum dot based non-volatile resistive memory

V. Kannan and J. K. Rhee

Appl. Phys. Lett. 99, 143504 (2011); http://dx.doi.org/10.1063/1.3647629 (3 pages) | Cited 1 time

Online Publication Date: 6 October 2011

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In this letter, we report a facile quantum dot based non-volatile resistive memory device with a switching speed of 10 ns and ON/OFF ratio of 10 000. The device showed excellent endurance characteristics for 100 000 switching cycles. Retention tests showed good stability and the devices are reproducible. Memory operating mechanism is proposed based on charge trapping in quantum dots with AlOx acting as barrier. This mechanism is supported by marked variation in capacitance value in ON and OFF states.
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81.07.Ta Quantum dots
73.63.Kv Quantum dots
84.30.Sk Pulse and digital circuits

Controlled recrystallization for low-current RESET programming characteristics of phase-change memory with Ge-doped SbTe

Zhe Wu, Gang Zhang, Youngwook Park, Stephen D. Kang, Ho-Ki Lyeo, Doo Seok Jeong, Jeung-hyun Jeong, Kwangsoo No, and Byung-ki Cheong

Appl. Phys. Lett. 99, 143505 (2011); http://dx.doi.org/10.1063/1.3641470 (3 pages) | Cited 5 times

Online Publication Date: 7 October 2011

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An investigation was conducted to examine the high RESET-current (IRESET) problem of phase-change memory (PCM) using a fast growth-dominated Ge-doped SbTe (GeST). By examining material and device characteristics of GeST with varying Sb-to-Te ratio from 1.80 to 3.82, the growth rate of crystallization was found to play an important role in determining IRESET and SET speed of the device. Lower IRESET obtained with decreasing Sb-to-Te ratio was ascribed to lower growth rate leading to smaller degree of recrystallization during melt-quenching. With shrinkage of device dimensions, GeST-PCM of a lower Sb-to-Te ratio may become increasingly promising due to its lower IRESET and scaled SET speed.
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81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
81.10.Fq Growth from melts; zone melting and refining
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