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3 Oct 2011

Volume 99, Issue 14, Articles (14xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 99, 141901 (2011); http://dx.doi.org/10.1063/1.3644948 (3 pages)

G. Kozlowski, P. Zaumseil, M. A. Schubert, Y. Yamamoto, J. Bauer, J. Matejova, T. Schulli, B. Tillack, and T. Schroeder
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High electric breakdown strength and energy density in vinylidene fluoride oligomer/poly(vinylidene fluoride) blend thin films

Mojtaba Rahimabady, Shuting Chen, Kui Yao, Francis Eng Hock Tay, and Li Lu

Appl. Phys. Lett. 99, 142901 (2011); http://dx.doi.org/10.1063/1.3645619 (3 pages) | Cited 6 times

Online Publication Date: 4 October 2011

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Dense α-phase blend films of vinylidene fluoride (VDF) oligomer and poly(vinylidene fluoride) (PVDF) of various compositions were prepared from chemical solution deposition. The dielectric constant of the films was unexpectedly lower, and the mechanical strength was higher than either of the two components, leading to high electromechanical dielectric breakdown strength (>850 MV/m vs. 300∼500 MV/m for typical PVDF-based films). The properties were attributed to the unique blend structure with high crystallinity and densely packed rigid amorphous phase incorporating long and short chains. A maximum polarization of 162 mC/m2 and a large electric energy density up to 27.3 J/cm3 were obtained.
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77.22.Jp Dielectric breakdown and space-charge effects
77.22.Ch Permittivity (dielectric function)
73.61.Ph Polymers; organic compounds
68.55.am Polymers and organics
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Thermo-electromechanical response of a ferroelectric perovskite from molecular dynamics simulations

Xiaowei Zeng and R. E. Cohen

Appl. Phys. Lett. 99, 142902 (2011); http://dx.doi.org/10.1063/1.3646377 (3 pages) | Cited 3 times

Online Publication Date: 4 October 2011

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Based on a shell model potential obtained from first principles calculations, we performed molecular dynamics simulations to investigate the electromechanical response of a ferroelectric perovskite under finite temperature and electric field. We characterize the switching paths by which a homogeneous polarization reorientation process would take place in the prototypical ferroelectric PbTiO3. We observe the hysteresis loop and butterfly electric-strain curve and obtain finite temperature piezoelectric coefficients in good agreement with experiments.
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72.20.Pa Thermoelectric and thermomagnetic effects
77.80.Dj Domain structure; hysteresis
77.65.-j Piezoelectricity and electromechanical effects
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
71.15.Pd Molecular dynamics calculations (Car-Parrinello) and other numerical simulations

Effect of deep trapping states on space charge suppression in polyethylene/ZnO nanocomposite

Fuqiang Tian, Qingquan Lei, Xuan Wang, and Yi Wang

Appl. Phys. Lett. 99, 142903 (2011); http://dx.doi.org/10.1063/1.3646909 (3 pages) | Cited 2 times

Online Publication Date: 4 October 2011

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This letter intends to reveal the mechanism of space charge suppression in low density polyethylene (LDPE)/ZnO nanocomposites. Trap level and space charge distributions were obtained from modified isothermal discharge current method and pulsed electro-acoustic (PEA) method, respectively. The results showed that ZnO nanoparticle doping introduced large amounts of deep trapping states, significantly reduced space charge accumulation and conduction current. The results can be explained in terms of deep trapping states resulted from the interface regions and morphology structure changes by nanoparticles doping, which greatly reduced the charge mobility, raised the charge injection potential at the contact and weakened impurity ionization.
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77.22.Jp Dielectric breakdown and space-charge effects
72.20.Fr Low-field transport and mobility; piezoresistance

Polarization switching at the nanoscale in ferroelectric copolymer thin films

R. V. Gaynutdinov, S. Mitko, S. G. Yudin, V. M. Fridkin, and Stephen Ducharme

Appl. Phys. Lett. 99, 142904 (2011); http://dx.doi.org/10.1063/1.3646906 (3 pages) | Cited 5 times

Online Publication Date: 5 October 2011

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The polarization switching kinetics were measured at the nanoscale in continuous thin films of a ferroelectric copolymer of vinylidene fluoride and trifluoroethylene. The dependence of the switching rate on voltage for a 54-nm thick film exhibits extrinsic nucleation and domain-growth type kinetics with no true threshold coercive field, and is qualitatively different from the behavior of an 18-nm thick film, which exhibits intrinsic switching kinetics, and a true threshold field. The results are consistent with studies of thin film capacitors of much larger area and with a recent refinement of the theory of the critical size for intrinsic switching.
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77.80.Fm Switching phenomena
77.84.Jd Polymers; organic compounds
84.32.Tt Capacitors
68.55.am Polymers and organics
73.61.Ph Polymers; organic compounds
77.22.Ej Polarization and depolarization

Nanosecond-range imprint and retention characterized from polarization-voltage hysteresis loops in insulating or leaky ferroelectric thin films

A. Q. Jiang, X. B. Liu, and Q. Zhang

Appl. Phys. Lett. 99, 142905 (2011); http://dx.doi.org/10.1063/1.3647577 (3 pages) | Cited 1 time

Online Publication Date: 6 October 2011

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We transferred ferroelectric domain switching currents under pulses into polarization-voltage (P-V) hysteresis loops. With this transformation, it is possible to derive the remanent polarization and coercive voltage from domain switching currents after the shortest imprint and retention time of 35 ns. After the separation of film leakage current from domain switching current, we measured the P-V hysteresis loop in a semiconducting BiFeO3 leaky thin film, where the apparent coercive field highly reaches 320 kV/cm2, suggestive of a different domain switching mechanism from other insulators. This technique facilitates nanosecond-range measurements of both ferroelectric capacitive and resistive memories.
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77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
77.22.Ej Polarization and depolarization
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
73.61.Le Other inorganic semiconductors
85.50.Gk Non-volatile ferroelectric memories

Correlation between dielectric properties and chemical composition of the tourmaline single crystals

Chandra Shekhar Pandey, Sven Jodlauk, and Jürgen Schreuer

Appl. Phys. Lett. 99, 142906 (2011); http://dx.doi.org/10.1063/1.3646912 (3 pages) | Cited 1 time

Online Publication Date: 6 October 2011

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Dielectric responses were studied on piezoelectric tourmaline single crystals of widely varying chemical composition from different geological origins. The dielectric constants at constants stress, and dissipation factor were measured as a function of frequency (100-1000 kHz) using method of substitution. A correlation between two independent dielectric constants (along and perpendicular to crystallographic c-axis) is observed, and dependence of dielectric constants on chemical composition is presented.
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77.22.Ch Permittivity (dielectric function)
77.65.Bn Piezoelectric and electrostrictive constants
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Detrimental Hf penetration into TiN gate electrode and subsequent degradation in dielectric properties of HfSiO high-k film

Hiroaki Arimura, Yuki Odake, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, and Heiji Watanabe

Appl. Phys. Lett. 99, 142907 (2011); http://dx.doi.org/10.1063/1.3646378 (3 pages)

Online Publication Date: 7 October 2011

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Hafnium penetration through the TiN gate electrode as thick as 10 nm is detected in the TiN/HfSiO/SiO2 gate stacks after high-temperature annealing by using x-ray photoelectron spectroscopy. The Hf outdiffusion, showing TiN thickness dependence, is revealed to cause permittivity lowering of the pristine HfSiO high-k layer, which accelerates the equivalent oxide thickness increase and degrades the dielectric properties. In contrast, such diffusion is suppressed by adopting metal inserted polycrystalline silicon stack (MIPS) structure. Our further experiments indicate that the SiO2 regrowth during high-temperature annealing, which is hampered in MIPS structure, triggers the adverse Hf diffusion.
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77.55.df For silicon electronics
66.30.Ny Chemical interdiffusion; diffusion barriers
79.60.Bm Clean metal, semiconductor, and insulator surfaces
77.22.Ch Permittivity (dielectric function)

Domain structures of ferroelectric thin film controlled by oxidizing atmosphere

D. C. Ma, Yue Zheng, Biao Wang, and C. H. Woo

Appl. Phys. Lett. 99, 142908 (2011); http://dx.doi.org/10.1063/1.3646387 (3 pages) | Cited 1 time

Online Publication Date: 7 October 2011

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Evolutions of domain morphology in the ferroelectric thin film subjected to the oxidizing atmosphere were predicted by using the phase field simulations, which incorporate the long-range electrostatic interactions and ionic surface charges. Due to effect of the oxidizing atmosphere, it is found that the ionic surface charges carried by oxygen can effectively change the internal electric filed, control the polarization orientation, and drive the domain wall motion of the ferroelectric thin film. Domain structures were simulated and also reveal that domain morphology of the ferroelectric thin film can be adjusted from a multi-domain to a mono-domain with increasing of the ionic charge density.
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77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
65.40.G- Other thermodynamical quantities

Nanoscale ferroelectric switching behavior at charged domain boundaries studied by angle-resolved piezoresponse force microscopy

Moonkyu Park, Seungbum Hong, Jiyoon Kim, Jongin Hong, and Kwangsoo No

Appl. Phys. Lett. 99, 142909 (2011); http://dx.doi.org/10.1063/1.3646761 (3 pages) | Cited 2 times

Online Publication Date: 7 October 2011

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We investigated the effect of charged domain boundaries (CDBs) on the coercive voltage (Vc) in polycrystalline Pb(Zr0.25Ti0.75)O3 (PZT) thin films using angle-resolved piezoresponse force microscopy (AR-PFM). By using the AR-PFM technique, we could observe the detailed domain structure with various degrees of CDBs including neutral domain boundaries in the PZT thin films. We found that the Vc increases at CDBs induced by polarization discontinuities. We attribute the change in Vc to the built-in field created by uncompensated polarization charges at the CDBs in the PZT thin films.
Show PACS
77.80.Fm Switching phenomena
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.65.-j Piezoelectricity and electromechanical effects
77.55.hj PZT
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