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Appl. Phys. Lett. 99, 171113 (2011); http://dx.doi.org/10.1063/1.3656970 (3 pages)

High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes

R. M. Farrell1, D. A. Haeger2, P. S. Hsu2, M. C. Schmidt2, K. Fujito3, D. F. Feezell2, S. P. DenBaars1,2, J. S. Speck2, and S. Nakamura1,2

1Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
2Materials Department, University of California, Santa Barbara, California 93106, USA
3Optoelectronics Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan

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(Received 27 September 2011; accepted 11 October 2011; published online 28 October 2011)

We demonstrate AlGaN-cladding-free (ACF) m-plane InGaN/GaN laser diodes (LDs) with peak output powers and estimated front facet optical power densities that are comparable to the state-of-the-art single-stripe emitter c-plane LDs. The threshold current density, slope efficiency, and peak output power were 4.66 kA/cm2, 1.29 W/A, and 1.6 W, respectively, after facet coating and under pulsed conditions. Catastrophic optical mirror damage was not observed up to an estimated optical power density of 51.2 MW/cm2 at the front mirror facet, indicating the potential for using ACF m-plane InGaN/GaN LDs in high-power LD applications.

© 2011 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 42.60.By

    Design of specific laser systems

  • 42.60.Jf

    Beam characteristics: profile, intensity, and power; spatial pattern formation

  • 42.79.Bh

    Lenses, prisms and mirrors

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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    References

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