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Applied Physics Letters / Volume 99 / Issue 18 / LASERS, OPTICS, AND OPTOELECTRONICS
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Appl. Phys. Lett. 99, 181127 (2011); http://dx.doi.org/10.1063/1.3658031 (3 pages)

Temperature-dependence of the internal efficiency droop in GaN-based diodes

J. Hader1, J. V. Moloney1, and S. W. Koch2

1Nonlinear Control Strategies, Inc., 3542 N. Geronimo Ave., Tucson, Arizona 85705, USA and Optical Sciences Center, University of Arizona, Tucson, Arizona 85721, USA
2Department of Physics and Materials Sciences Center, Philipps Universität Marburg, Renthof 5, 35032 Marburg, Germany

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(Received 8 June 2011; accepted 14 October 2011; published online 4 November 2011)

The temperature dependence of the measured internal efficiencies of green and blue emitting InGaN-based diodes is analyzed. With increasing temperature, a strongly decreasing strength of the loss mechanism responsible for droop is found which is in contrast to the usually assumed behavior of Auger losses. However, the experimental observations can be well reproduced assuming density activated defect recombination with a temperature independent recombination time.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

Auger effect, electron-hole recombination, gallium compounds, III-V semiconductors, indium compounds, light emitting diodes, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3658031

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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  11. The formula shown for the broadening in Ref. 10 is not correct. The correct formula is J(N)=(1/(sqrt(2 pi sigma[sup 2])))[integral]<sub>0</sub><sup>[infinity]</sup>dÑJ(N(Ñ,N))e<sup>-(((N - [N-tilde])[sup 2])/(2 sigma[sup 2]))</sup>, with N(Ñ,N)=ÑN((1/(sqrt(2 pi sigma[sup 2])))[integral]<sub>0</sub><sup>[infinity]</sup>dN'N'e<sup>-(((N-N')[sup 2])/(2 sigma[sup 2]))</sup>)-1.
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Figures (click on thumbnails to view enlargements)

FIG.1
(Color online) Experimentally measured IQEs (symbols) and fits using the DADR model (solid lines). Top: for the 523 nm device from Ref. 13. Bottom: for the 465 nm device.14

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
(Color online) Temperature dependence of fit parameters. Circles: 523 nm device from Ref. 13. Squares: 465 nm device.14 Symbols: values determined from fits to the experiment. Black (red) lines are fits (a) assuming an activation energy Ea = 53 meV (50 meV). (b) ∝ T−7/4. (c) ∝ T−5/2 (T−3). (d) Ea = 30 meV. Dashed line in (c): Ea = −60 meV.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
(Color online) As bottom part of Fig. 1. Here using Auger losses (∝CN3) instead of DADR losses.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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