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7 Nov 2011

Volume 99, Issue 19, Articles (19xxxx)

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Appl. Phys. Lett. 99, 193101 (2011); http://dx.doi.org/10.1063/1.3657777 (3 pages)

Sungwook Chung, Jonathan R. Felts, Debin Wang, William P. King, and James J. De Yoreo
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Temperature-dependence of ink transport during thermal dip-pen nanolithography

Sungwook Chung, Jonathan R. Felts, Debin Wang, William P. King, and James J. De Yoreo

Appl. Phys. Lett. 99, 193101 (2011); http://dx.doi.org/10.1063/1.3657777 (3 pages) | Cited 3 times

Online Publication Date: 7 November 2011

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We investigate the control of tip temperature on feature size during dip-pen nanolithography (DPN) of mercaptohexadecanoic acid (MHA) on Au. Heated atomic force microscopy (AFM) probes operated between 25 °C and 50 °C wrote nanostructures of MHA for various dwell times and tip speeds. The feature size exhibited an exponential dependence on tip temperature with an apparent activation barrier of 165 kJ/mol. Analysis of the ink transfer process shows that, while ∼1/3 of the barrier is from ink dissolution into the meniscus, the rest reflects the barrier to adsorption onto the growing feature, a process that has been ignored in previous DPN models.
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81.16.Nd Micro- and nanolithography
81.16.Ta Atom manipulation

Adjustable stiffness of individual piezoelectric nanofibers by electron beam polarization

Xi Chen, Anton Li, Nan Yao, and Yong Shi

Appl. Phys. Lett. 99, 193102 (2011); http://dx.doi.org/10.1063/1.3660226 (3 pages)

Online Publication Date: 7 November 2011

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We present a method to adjust the stiffness of individual piezoelectric nanofiber by electron beam induced polarization under an in situ scanning electron microscopy. The lead zirconate titanate (PZT) nanofibers were fabricated by an electrospinning process. The Young’s modulus was calculated from the resonant frequency excited by an oscillating electric field applied through a nanomanipulator. The stiffness can be adjusted up to 75% by induced polarization under the exposure of an electron beam to control the domain boundaries in single PZT nanofibers. Splitting effect of the resonant frequencies was observed due to anisotropic stiffness in polarized PZT nanofibers.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.40.Jj Elasticity and anelasticity, stress-strain relations
77.84.Cg PZT ceramics and other titanates
77.65.-j Piezoelectricity and electromechanical effects
62.20.dq Other elastic constants
62.20.de Elastic moduli

Solid-immersion-lens-enhanced nonlinear frequency-variation mapping of a silicon integrated-circuit

K. A. Serrels, C. Farrell, T. R. Lundquist, D. T. Reid, and P. Vedagarbha

Appl. Phys. Lett. 99, 193103 (2011); http://dx.doi.org/10.1063/1.3658873 (3 pages)

Online Publication Date: 7 November 2011

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By inducing two-photon absorption within the active layer of a proprietary silicon test chip, we demonstrate here solid-immersion-lens-enhanced nonlinear frequency-variation mapping of a 500-MHz ring oscillator circuit at 1560 nm. This work compares the performance of conventional single-photon linear methodologies against advanced two-photon alternatives and reports a maximum laser-induced change in the oscillator stage-delay of approximately 1 ps, and a signal injection resolution of 260 nm.
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85.60.-q Optoelectronic devices
42.65.-k Nonlinear optics
84.30.Ng Oscillators, pulse generators, and function generators

Thermal rectification in thickness-asymmetric graphene nanoribbons

Wei-Rong Zhong, Wei-Hao Huang, Xi-Rong Deng, and Bao-Quan Ai

Appl. Phys. Lett. 99, 193104 (2011); http://dx.doi.org/10.1063/1.3659474 (3 pages) | Cited 7 times

Online Publication Date: 7 November 2011

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Thermal rectification in thickness asymmetric graphene nanoribbons connecting single-layer with multi-layer graphene is investigated by using classical nonequilibrium molecular dynamics. It is reported that the graphene nanoribbons with thickness-asymmetry have a good thermal rectification. The thermal rectification factor depends on temperature as well as the thickness-ratio of the two-segment. Our results provide a direct evidence that the thermal rectifier can be achieved in a nanostructure crossing two- and three-dimension.
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81.05.ue Graphene
73.40.Ei Rectification
73.63.-b Electronic transport in nanoscale materials and structures
81.07.-b Nanoscale materials and structures: fabrication and characterization

Study on transport pathway in oxide nanowire growth by using spacing-controlled regular array

Annop Klamchuen, Takeshi Yanagida, Masaki Kanai, Kazuki Nagashima, Keisuke Oka, Sakon Rahong, Meng Gang, Mati Horprathum, Masaru Suzuki, Yoshiki Hidaka, Shoichi Kai, and Tomoji Kawai

Appl. Phys. Lett. 99, 193105 (2011); http://dx.doi.org/10.1063/1.3660246 (3 pages) | Cited 4 times

Online Publication Date: 8 November 2011

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Metal oxide nanowires formed via vapor-liquid-solid (VLS) process are promising nanoscale building blocks. Although understanding material transport pathways across three phases is crucial to realize well-defined oxide nanowires, such knowledge is unfortunately far from comprehensive. Here we investigate the material transport pathway in VLS grown MgO nanowires by utilizing spacing-controlled regular array. Defining the regular spacing of catalysts allows us to extract the information of transport pathway for each catalyst. We found the significant contribution of vapor phase transport pathway rather than the surface diffusion transport. This result highlights the critical role of re-evaporation process on VLS oxide nanowires.
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81.07.Gf Nanowires
81.16.Hc Catalytic methods
68.43.Jk Diffusion of adsorbates, kinetics of coarsening and aggregation
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)

Adatom kinetics on nonpolar InN surfaces: Implications for one-dimensional nanostructures growth

A. Aliano, A. Catellani, and G. Cicero

Appl. Phys. Lett. 99, 193106 (2011); http://dx.doi.org/10.1063/1.3658029 (3 pages) | Cited 1 time

Online Publication Date: 8 November 2011

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The adatom kinetics processes of adsorption and diffusion for In and N species on nonpolar InN a- and m-planes have been studied using ab initio density functional theory calculations. Our results reveal remarkable in-plane anisotropic potential energy surfaces, consistently with experimental data on vertically c-oriented one-dimensional nanostructure formation; we demonstrate that lateral wall morphology strongly determinates the contribution of diffusion to the growth process.
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81.05.Ea III-V semiconductors
81.07.Bc Nanocrystalline materials
81.16.-c Methods of micro- and nanofabrication and processing
68.35.Fx Diffusion; interface formation
68.43.Jk Diffusion of adsorbates, kinetics of coarsening and aggregation
68.43.Mn Adsorption kinetics

Vertically integrated silicon-germanium nanowire field-effect transistor

G. Rosaz, B. Salem, N. Pauc, A. Potié, P. Gentile, and T. Baron

Appl. Phys. Lett. 99, 193107 (2011); http://dx.doi.org/10.1063/1.3660244 (3 pages) | Cited 2 times

Online Publication Date: 9 November 2011

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We demonstrate in this paper the possibility to vertically integrate SiGe nanowires in order to use them as vertical channel for field-effect transistors (FETs). We report a threshold voltage close to 3.9 V, an ION/IOFF ratio of 104. The subthreshold slope was estimated to be around 0.9 V/decade and explained by a high traps density at the nanowire core/oxide shell interface with an estimated density of interface traps Dit ∼ 1.2 × 1013 cm−2 eV−1. Comparisons are made with both vertical Si and horizontal SiGe FETs performances.
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85.30.Tv Field effect devices

Silicon nanocrystals doped with substitutional or interstitial manganese

Xiaobo Chen (陈晓波), Xiaodong Pi (皮孝东), and Deren Yang (杨德仁)

Appl. Phys. Lett. 99, 193108 (2011); http://dx.doi.org/10.1063/1.3660233 (3 pages)

Online Publication Date: 11 November 2011

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Manganese (Mn)-doped silicon nanocrystals (Si NCs) in which Mn is in its most likely substitutional or interstitial location have been investigated. Large differences in magnetic moment are found between Si NCs doped with substitutional Mn and those doped with interstitial Mn. For all the doped Si NCs, quantum confinement affects the electronic states of majority spin more significantly than those of minority spin. As the NC size changes from 1.2 to 1.5 nm, the spin flipping of electronic transition across the NC optical gap occurs for Si NCs doped with substitutional Mn. This leads to significant changes in the optical absorption of Si NCs. It is likely that such spin-flipping also happens for larger (>1.7 nm) Si NCs doped with interstitial Mn.
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61.72.uf Ge and Si
73.22.-f Electronic structure of nanoscale materials and related systems
61.72.jj Interstitials
75.30.Cr Saturation moments and magnetic susceptibilities
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.20.Mq Elemental semiconductors

Tunable magneto-photonic response of nickel nanostructures

J. F. Torrado, J. B. González-Díaz, G. Armelles, A. García-Martín, A. Altube, M. López-García, J. F. Galisteo-López, A. Blanco, and C. López

Appl. Phys. Lett. 99, 193109 (2011); http://dx.doi.org/10.1063/1.3660587 (3 pages) | Cited 4 times

Online Publication Date: 11 November 2011

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In this letter, we present both experimental and numerical studies of the magneto-optical (MO) properties of nickel infiltrated opals. Ni can show interesting MO properties that can be controlled by nanostructuration through colloidal crystals templating. Nanostructuration allows the coupling of light to surface plasmon modes of Ni, and a clear dependence of the MO response as a function of the structural parameters of the template has been observed. This dependence can be used in future tunable devices such as switchers or MO modulators.
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78.20.Ls Magneto-optical effects
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
73.22.Lp Collective excitations
61.46.Hk Nanocrystals

Controlling the morphology and optical properties of self-assembled InAsSb/InGaAs/InP nanostructures via Sb exposure

W. Lei, H. H. Tan, and C. Jagadish

Appl. Phys. Lett. 99, 193110 (2011); http://dx.doi.org/10.1063/1.3659695 (3 pages) | Cited 6 times

Online Publication Date: 11 November 2011

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Engineering the surface energy, interface energy, and elastic strain energy in the system via Sb exposure is used to realize the control on the morphology and optical properties of self-assembled InP-based InAsSb/InGaAs nanostructures. By flowing trimethylantimony precursor over the surface of InGaAs buffer layer before the growth of InAsSb nanostructures, the surface/interface energy in the system is reduced, while the strain energy in the system is enhanced, which lead to a shape transition from dot to dash, and to wire for the InAsSb nanostructures. As a result of their morphology changes, the InAsSb nanostructures show different polarization characteristics in their photoluminescence emission.
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81.16.Dn Self-assembly
61.46.Bc Structure of clusters (e.g., metcars; not fragments of crystals; free or loosely aggregated or loosely attached to a substrate)
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
81.07.Bc Nanocrystalline materials
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