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4 Jul 2011

Volume 99, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 99, 011107 (2011); http://dx.doi.org/10.1063/1.3606505 (3 pages)

Kosei Ueno, Satoaki Takabatake, Ko Onishi, Hiroko Itoh, Yoshiaki Nishijima, and Hiroaki Misawa
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A frequency shifting liquid metal antenna with pressure responsiveness

Mohammad Rashed Khan, Gerard J. Hayes, Ju-Hee So, Gianluca Lazzi, and Michael D. Dickey

Appl. Phys. Lett. 99, 013501 (2011); http://dx.doi.org/10.1063/1.3603961 (3 pages) | Cited 8 times

Online Publication Date: 5 July 2011

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This letter describes the fabrication and characterization of a shape shifting antenna that changes electrical length and therefore, frequency, in a controlled and rapid response to pressure. The antenna is composed of a liquid metal alloy (eutectic gallium indium) injected into microfluidic channels that feature rows of posts that separate adjacent segments of the metal. The initial shape of the antenna is stabilized mechanically by a thin oxide skin that forms on the liquid metal. Rupturing the skin merges distinct segments of the metal, which rapidly changes the length, and therefore frequency, of the antenna. A high speed camera elucidates the mechanism of merging and simulations model accurately the spectral properties of the antennas.
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84.40.Ba Antennas: theory, components and accessories

Characterization of a junctionless diode

Ran Yu, Isabelle Ferain, Nima Dehdashti Akhavan, Pedram Razavi, Ray Duffy, and Jean-Pierre Colinge

Appl. Phys. Lett. 99, 013502 (2011); http://dx.doi.org/10.1063/1.3608150 (3 pages)

Online Publication Date: 5 July 2011

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A diode has been realised using a silicon junctionless (JL) transistor. The device contains neither PN junction nor Schottky junction. The device is measured at different temperatures. The characteristics of the JL diode are essentially identical to those of a regular PN junction diode. The JL diode has an on/off current ratio of 108, an ideality factor of 1.09, and a reverse leakage current of 1 × 10−14 A at room temperature. The mechanism of the leakage current is discussed using the activation energy (EA). The turn-on voltage of the device can be tuned by JL transistor threshold voltage.
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85.30.Tv Field effect devices

Temperature performance of the edge emitting transistor laser

Song Liang, Hongliang Zhu, Duanhua Kong, Bin Niu, Lingjuan Zhao, and Wei Wang

Appl. Phys. Lett. 99, 013503 (2011); http://dx.doi.org/10.1063/1.3608384 (3 pages)

Online Publication Date: 6 July 2011

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The characteristic temperature (T0) of the edge emitting transistor laser (TL) is studied numerically. For the deep-ridge TL, the common base (CB) mode characteristic temperature (T0,CB) is a lot lower than the common emitter (CE) mode characteristic temperature (T0,CE), which is comparable to a conventional laser. This is resulted from the increase of the emitter to base current gain with the base current, which amplifies the increase of the CB threshold current with temperature. For the shallow-ridge TL, the T0,CE is found to be also rather low and is only slightly higher than the T0,CB. This can be attributed to the large fraction of electron current in the total base current, which is related to the large thickness of base layer and the insertion of quantum wells in the TL.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.30.Pq Bipolar transistors

Graphene-based quantum Hall effect infrared photodetector operating at liquid Nitrogen temperatures

Nikolai G. Kalugin, Lei Jing, Wenzhong Bao, Lee Wickey, Christopher Del Barga, Mekan Ovezmyradov, Eric A. Shaner, and Chun Ning Lau

Appl. Phys. Lett. 99, 013504 (2011); http://dx.doi.org/10.1063/1.3609320 (3 pages) | Cited 2 times

Online Publication Date: 8 July 2011

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We demonstrate a quantum Hall effect (QHE) graphene-based infrared photodetector that functions at 70K—a temperature achievable using liquid Nitrogen in vapor evacuation regime. This result opens up the possibility of wider use of QHE photodetectors if graphene is utilized instead of “classical” materials with two-dimensional electron gas. The potential advantages to this approach are increased operating temperature, reduced magnetic field, and wider range of operating frequency compared to previous implementations of QHE detectors.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Retention mechanism study of the ferroelectric field effect transistor

Xiao Pan and T. P Ma

Appl. Phys. Lett. 99, 013505 (2011); http://dx.doi.org/10.1063/1.3609323 (3 pages) | Cited 4 times

Online Publication Date: 8 July 2011

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Single-transistor ferroelectric field effect transistor offers attractive features for future memory applications, such as scalable cell structure, high speed, and low power consumption. However, its relatively short retention time has prevented its application as a non-volatile memory. In order to investigate its retention mechanism, we have developed an automatic retention measurement technique, which enables direct flatband voltage tracking shortly after programming. Two mechanisms, based on the effects of the depolarization field and the gate leakage followed by trapping, respectively, have been identified responsible for the memory window loss in different time regimes, according to the data obtained from this technique.
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85.30.Tv Field effect devices
85.50.Gk Non-volatile ferroelectric memories
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