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4 Jul 2011

Volume 99, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 99, 011107 (2011); http://dx.doi.org/10.1063/1.3606505 (3 pages)

Kosei Ueno, Satoaki Takabatake, Ko Onishi, Hiroko Itoh, Yoshiaki Nishijima, and Hiroaki Misawa
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Resistance states dependence of photoluminescence in Ag/ZnO/Pt structures

V. Sh. Yalishev, Y. S. Kim, B. H. Park, and Sh. U. Yuldashev

Appl. Phys. Lett. 99, 012101 (2011); http://dx.doi.org/10.1063/1.3607290 (3 pages) | Cited 1 time

Online Publication Date: 5 July 2011

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Optical and resistance switching properties in the Ag/ZnO/Pt structure were investigated. Two types of resistance switching (bipolar and monopolar) were observed. Photoluminescence measurements showed dissimilar emission spectra for the each type of switching that might be explained by different processes occurred during resistance switching. In case of the bipolar resistance switching, the change in the ultraviolet part of spectrum was observed and it was attributed to Ag+ ions migration. On the other hand, the monopolar switching demonstrated the changes in the visible luminescence emission that could be, in turn, interpreted by the generation/recovery of oxygen vacancies.
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73.40.Sx Metal-semiconductor-metal structures
78.40.Fy Semiconductors
78.55.Et II-VI semiconductors

Temperature dependence of the local conductance in nanocrystalline CdSe films

D. Toker, I. Balberg, O. Zelaya-Angel, E. Savir, and O. Millo

Appl. Phys. Lett. 99, 012102 (2011); http://dx.doi.org/10.1063/1.3607291 (3 pages)

Online Publication Date: 5 July 2011

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We have studied the local transport properties of nanocrystalline CdSe films by conductance atomic force microscopy (C-AFM) in the temperature range of 25–300 K. Surprisingly, the conductance measured under positive AFM-tip bias for the more resistive films was found to increase with decreasing temperature (i.e., “metallic-like” behavior), whereas the opposite temperature dependence was observed for the more conductive samples consisting of larger crystallites. We explain the results by considering the crystallite-size dependence of quantum-confinement and electron delocalization, which accounts also for the current decay-rate under the application of negative tip-bias.
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73.61.Ga II-VI semiconductors
73.63.Bd Nanocrystalline materials
81.07.Bc Nanocrystalline materials
73.50.Dn Low-field transport and mobility; piezoresistance

Gapless band structure of PbPdO2: A combined first principles calculation and experimental study

S. W. Chen, S. C. Huang, G. Y. Guo, J. M. Lee, S. Chiang, W. C. Chen, Y. C. Liang, K. T. Lu, and J. M. Chen

Appl. Phys. Lett. 99, 012103 (2011); http://dx.doi.org/10.1063/1.3607293 (3 pages) | Cited 6 times

Online Publication Date: 5 July 2011

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We present experimental evidence of the gapless band structure of PbPdO2 by combined x-ray photoemission and x-ray absorption spectra complemented with first principles band structure calculations. The electronic structure near the Fermi level of PbPdO2 is mainly composed of O 2p and Pd 4d bands, constructing the conduction path along the Pd-O layer in PbPdO2. Pd deficiency in PbPdO2 causes decreased O 2p-Pd 4d and increased O 2p-Pb 6p hybridizations, thereby inducing a small band gap and hence reducing conductivity. Hall measurements indicate that PbPdO2 is a p-type gapless semiconductor with intrinsic hole carriers transporting in the Pd-O layers.
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71.20.Nr Semiconductor compounds
72.20.My Galvanomagnetic and other magnetotransport effects
72.80.Jc Other crystalline inorganic semiconductors
78.70.Dm X-ray absorption spectra
79.60.-i Photoemission and photoelectron spectra
71.15.-m Methods of electronic structure calculations

Stark-effect scattering in rough quantum wells

Raj K. Jana and Debdeep Jena

Appl. Phys. Lett. 99, 012104 (2011); http://dx.doi.org/10.1063/1.3607485 (3 pages) | Cited 1 time

Online Publication Date: 6 July 2011

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A scattering mechanism stemming from the Stark-shift of energy levels by electric fields due to interface roughness in semiconductor quantum wells is identified. This scattering mechanism feeds off interface roughness and electric fields and modifies the well known “sixth-power” law of electron mobility degradation. This work first treats Stark-effect scattering in rough quantum wells as a perturbation for small electric fields and then directly absorbs it into the Hamiltonian for large fields. The major result is the existence of a window of quantum well widths for which the combined roughness scattering is minimum. Carrier scattering and mobility degradation in wide quantum wells are thus expected to be equally severe as in narrow wells due to Stark-effect scattering in electric fields.
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78.20.Jq Electro-optical effects
78.67.De Quantum wells
68.35.Ct Interface structure and roughness
72.20.Fr Low-field transport and mobility; piezoresistance
73.21.Fg Quantum wells
73.63.Hs Quantum wells

Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In0.53Ga0.47As

Ivana, Jisheng Pan, Zheng Zhang, Xingui Zhang, Huaxin Guo, Xiao Gong, and Yee-Chia Yeo

Appl. Phys. Lett. 99, 012105 (2011); http://dx.doi.org/10.1063/1.3607959 (3 pages) | Cited 6 times

Online Publication Date: 6 July 2011

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The work function of Ni-InGaAs and the band alignment between Ni-InGaAs and In0.53Ga0.47As were investigated using photoelectron spectroscopy. The vacuum work function of Ni-InGaAs is obtained to be ∼5.1 eV using ultraviolet photoelectron spectroscopy (UPS). In addition, it was observed that the Fermi level of Ni-InGaAs is aligned to near conduction band of In0.53Ga0.47As at interface. For Ni-InGaAs formed on p-type In0.53Ga0.47As, this gives a Schottky contact with a hole barrier height of 0.8 ± 0.1 eV. Ni-InGaAs would form an ohmic contact on n-type In0.53Ga0.47As.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
81.05.Ea III-V semiconductors
71.20.Nr Semiconductor compounds
73.30.+y Surface double layers, Schottky barriers, and work functions
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
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Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors

Chih-Hao Dai, Ting-Chang Chang, Ann-Kuo Chu, Yuan-Jui Kuo, Szu-Han Ho, Tien-Yu Hsieh, Wen-Hung Lo, Ching-En Chen, Jou-Miao Shih, Wan-Lin Chung, Bai-Shan Dai, Hua-Mao Chen, Guangrui Xia, Osbert Cheng, and Cheng Tung Huang

Appl. Phys. Lett. 99, 012106 (2011); http://dx.doi.org/10.1063/1.3608241 (3 pages) | Cited 8 times

Online Publication Date: 6 July 2011

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This paper investigates the channel hot carrier stress (CHCS) effects on gate-induced drain leakage (GIDL) current in high-k/metal-gate n-type metal-oxide-semiconductor field effect transistors. It was found that the behavior of GIDL current during CHCS is dependent upon the interfacial layer (IL) oxide thickness of high-k/metal-gate stacks. For a thinner IL, the GIDL current gradually decreases during CHCS, a result contrary to that found in a device with thicker IL. Based on the variation of GIDL current at different stress conditions, the trap-assisted band-to-band hole injection model is proposed to explain the different behavior of GIDL current for different IL thicknesses.
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85.30.Tv Field effect devices
77.55.D- High-permittivity gate dielectric films
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.30.+q High-frequency effects; plasma effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Ht High-field and nonlinear effects

Energy gaps in nitrogen delta-doping graphene: A first-principles study

Xiao-Lin Wei, Hui Fang, Ru-Zhi Wang, Yuan-Ping Chen, and Jian-Xin Zhong

Appl. Phys. Lett. 99, 012107 (2011); http://dx.doi.org/10.1063/1.3609243 (3 pages) | Cited 4 times

Online Publication Date: 7 July 2011

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First-principles calculations are performed to study the modulation of energy gaps in nitrogen delta-doping (N δ-doping) graphene and armchair-edge graphene nanoribbons (AGNRs). The energy gap of graphene only opens at a large nitrogen doping content. For AGNRs, the energy gaps tend to decrease with the N δ-doping, and an interesting transition from direct to indirect bandgap is observed. Moreover, the effects of N δ-doping on energy gaps incline to decease with the reduction of the doping content. Our results may help to design novel graphene-based nanoelectronics devices by controlling N δ-doping of graphene.
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73.22.Pr Electronic structure of graphene
71.15.-m Methods of electronic structure calculations
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
71.20.Tx Fullerenes and related materials; intercalation compounds
61.72.up Other materials

Phase separation in thermoelectric delafossite CuFe1−xNixO2 observed by soft x-ray magnetic circular dichroism

J.-S. Kang, D. H. Kim, Jihoon Hwang, Eunsook Lee, T. Nozaki, K. Hayashi, T. Kajitani, B.-G. Park, J.-Y. Kim, and B. I. Min

Appl. Phys. Lett. 99, 012108 (2011); http://dx.doi.org/10.1063/1.3609248 (3 pages)

Online Publication Date: 7 July 2011

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Electronic structures of Ni-doped CuFe1−xNixO2 delafossite oxides (0 ≤ x ≤ 0.03) have been investigated by employing soft x-ray magnetic circular dichroism (XMCD). Finite XMCD signals are observed for Fe, Ni, and Cu 2p states, and valence states of Cu, Fe, and Ni ions are nearly monovalent (Cu+), trivalent (Fe3+), and divalent (Ni2+), respectively, for all x ≤ 0.03. Tiny magnetic impurities could be detected by employing XMCD. Fe and Ni 2p XMCD signals are identified due to ferrimagnetic spinel impurities of CuFe2O4 and NiFe2O4. XMCD signals for Cu 2p states arise from divalent Cu2+ ions. Thermoelectrical properties are found to be very sensitive to the very little impurity phase present in delafossite oxides.
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72.20.Pa Thermoelectric and thermomagnetic effects
75.30.Hx Magnetic impurity interactions
75.50.Gg Ferrimagnetics
64.75.Bc Solubility
71.20.Nr Semiconductor compounds

Surface versus bulk state in topological insulator Bi2Se3 under environmental disorder

Matthew Brahlek, Yong Seung Kim, Namrata Bansal, Eliav Edrey, and Seongshik Oh

Appl. Phys. Lett. 99, 012109 (2011); http://dx.doi.org/10.1063/1.3607484 (3 pages) | Cited 6 times

Online Publication Date: 7 July 2011

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Topological insulators (TIs) are predicted to be composed of an insulating bulk state along with conducting channels on the boundary of the material. In Bi2Se3, however, the Fermi level naturally resides in the conduction band due to intrinsic doping by selenium vacancies, leading to metallic bulk states. In such non-ideal TIs, it is not well understood how the surface and bulk states behave under environmental disorder. In this letter, based on transport measurements of Bi2Se3 thin films, we show that the bulk states are sensitive to environmental disorder but the surface states remain robust.
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73.20.At Surface states, band structure, electron density of states
73.61.Ng Insulators
61.72.jd Vacancies
71.20.Ps Other inorganic compounds

Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

Nicolas Reckinger, Claude Poleunis, Emmanuel Dubois, Constantin Augustin Duţu, Xiaohui Tang, Arnaud Delcorte, and Jean-Pierre Raskin

Appl. Phys. Lett. 99, 012110 (2011); http://dx.doi.org/10.1063/1.3608159 (3 pages) | Cited 2 times

Online Publication Date: 7 July 2011

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The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2−x formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at the ErSi2–x/Si interface. On the other hand, if the implanted dose is slightly enhanced, the annealing temperature required to reach sub-0.12-eV effective SBH can be further reduced. This process enables the formation of very low effective SBH ErSi2–x/n-Si contacts with a low thermal budget.
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73.40.Ns Metal-nonmetal contacts
81.40.Gh Other heat and thermomechanical treatments
73.30.+y Surface double layers, Schottky barriers, and work functions
61.72.up Other materials
61.72.sh Impurity distribution

Two-dimensional electron gas properties by current-voltage analyses of Al0.86In0.14N/AlN/GaN heterostructures

S. Pandey, B. Fraboni, D. Cavalcoli, A. Minj, and A. Cavallini

Appl. Phys. Lett. 99, 012111 (2011); http://dx.doi.org/10.1063/1.3608162 (3 pages) | Cited 6 times

Online Publication Date: 7 July 2011

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We report on the current transport properties of AlInN/AlN/GaN high electron mobility transitors with different AlN interlayer thickness. We determined the two-dimensional electron gas (2DEG) properties directly from simple current-voltage measurements, carried out with two Schottky contacts in a planar back-to-back configuration. A model has been developed to straightforwardly extract the 2DEG electrical properties from room-temperature current-voltage curves, and we correlated them to the effects of varying AlN thickness. The 2DEG properties calculated from current-voltage analyses are in very good agreement with results obtained with standard Hall measurements.
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85.30.Tv Field effect devices

Electrical measurement of non-destructively p-type doped graphene using molybdenum trioxide

Lanfei Xie, Xiao Wang, Hongying Mao, Rui Wang, Mianzhi Ding, Yu Wang, Barbaros Özyilmaz, Kian Ping Loh, Andrew T. S. Wee, Ariando, and Wei Chen

Appl. Phys. Lett. 99, 012112 (2011); http://dx.doi.org/10.1063/1.3609318 (3 pages) | Cited 6 times

Online Publication Date: 8 July 2011

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We demonstrate effective non-destructive p-type doping of graphene via surface modification with molybdenum trioxide (MoO3) thin film using electrical transport measurements. The p-type doping via MoO3 modification of graphene leads to the downward shift of Fermi level towards the valence band. MoO3 modified graphene retains its high charge carrier mobility, facilitating the observation of quantum Hall effect. In-situ ultraviolet photoelectron spectroscopy studies also show that air exposure of MoO3 modified graphene reduces the doping efficiency.
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72.80.Vp Electronic transport in graphene
73.22.Pr Electronic structure of graphene
72.20.Fr Low-field transport and mobility; piezoresistance
73.43.-f Quantum Hall effects
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact

Y. Ando, K. Kasahara, K. Yamane, Y. Baba, Y. Maeda, Y. Hoshi, K. Sawano, M. Miyao, and K. Hamaya

Appl. Phys. Lett. 99, 012113 (2011); http://dx.doi.org/10.1063/1.3607480 (3 pages) | Cited 19 times

Online Publication Date: 8 July 2011

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We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si channel and a Schottky tunnel contact. In a low current-bias region, the Hanle-effect curves are observed only under forward bias conditions. This can be considered that the electrical detectability at the forward-biased contact is higher than that at the reverse-biased contact. This is possible evidence for the detection of spin-polarized electrons created in a Si channel.
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73.30.+y Surface double layers, Schottky barriers, and work functions
72.25.-b Spin polarized transport

Extraction of correct Schottky barrier height of sulfur implanted NiSi/n-Si junctions: Junction doping rather than barrier height lowering

J. Chan, N. Y. Martinez, J. J. D. Fitzgerald, A. V. Walker, R. A. Chapman, D. Riley, A. Jain, C. L. Hinkle, and E. M. Vogel

Appl. Phys. Lett. 99, 012114 (2011); http://dx.doi.org/10.1063/1.3609874 (3 pages) | Cited 2 times

Online Publication Date: 8 July 2011

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Proper analysis of the Schottky barrier height extraction methods shows that sulfur implantation followed by anneal does not effectively reduce the Schottky barrier height of NiSi/n-Si contacts. Instead, the results for sulfur implanted samples are consistent with enhanced field emission due to an increased doping density of the surface region of the silicon. Sulfur has a large impact on contact resistivity for silicon with low initial doping concentration (<∼1017 cm−3), but little impact for silicon with high initial doping density (>∼1017 cm−3). Internal photoemission measurements show that the Schottky barrier height remains unchanged with sulfur implantation.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Cg Contact resistance, contact potential
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
79.70.+q Field emission, ionization, evaporation, and desorption
61.72.uf Ge and Si
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