APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Next Issue

4 Jul 2011

Volume 99, Issue 1, Articles (01xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 99, 011107 (2011); http://dx.doi.org/10.1063/1.3606505 (3 pages)

Kosei Ueno, Satoaki Takabatake, Ko Onishi, Hiroko Itoh, Yoshiaki Nishijima, and Hiroaki Misawa
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

H. Jönen, U. Rossow, H. Bremers, L. Hoffmann, M. Brendel, A. D. Dräger, S. Schwaiger, F. Scholz, J. Thalmair, J. Zweck, and A. Hangleiter

Appl. Phys. Lett. 99, 011901 (2011); http://dx.doi.org/10.1063/1.3607301 (3 pages) | Cited 6 times

Online Publication Date: 5 July 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on the optical properties of m-plane GaInN/GaN quantum wells (QWs). We found that the emission energy of GaInN QWs grown on m-plane SiC is significantly lower than on non-polar bulk GaN, which we attribute to the high density of stacking faults. Temperature and power dependent photoluminescence reveals that the GaInN QWs on SiC have almost as large internal quantum efficiencies as on bulk GaN despite the much higher defect density. Our results indicate that quantum-wire-like features formed by stacking faults intersecting the quantum wells provide a highly efficient light emission completely dominating the optical properties of the structures.
Show PACS
78.66.Fd III-V semiconductors
61.72.Nn Stacking faults and other planar or extended defects
78.55.Cr III-V semiconductors

Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region

Ryan G. Banal, Mitsuru Funato, and Yoichi Kawakami

Appl. Phys. Lett. 99, 011902 (2011); http://dx.doi.org/10.1063/1.3607306 (3 pages) | Cited 9 times

Online Publication Date: 6 July 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Internal quantum efficiencies (IQEs) as high as 69% were realized at room temperature from AlGaN/AlN quantum wells (QWs) emitting at 247 nm grown by metalorganic vapor phase epitaxy. The extremely high IQEs were achieved by examining the source–supply sequence. QWs fabricated by a continuous source–supply method have longer emission wavelengths (λ) and higher IQEs compared to QWs fabricated by modified migration enhanced epitaxy (MMEE). MMEE is an alternating source–supply method where the NH3 interruption promotes Ga evaporation. Thus, to obtain the same λ, MMEE requires a lower growth temperature than the continuous method, compromising the quality of the AlN and AlGaN layers as well as the IQE of QWs.
Show PACS
73.63.Hs Quantum wells
78.67.De Quantum wells
82.33.Ya Chemistry of MOCVD and other vapor deposition methods

Spectral and spatially resolved imaging of photoluminescence in multicrystalline silicon wafers

E. Olsen and A.S. Flø

Appl. Phys. Lett. 99, 011903 (2011); http://dx.doi.org/10.1063/1.3607307 (3 pages) | Cited 5 times

Online Publication Date: 6 July 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The photoluminescent properties of multicrystalline silicon wafers have been studied using hyperspectral imaging in the region 900–1700 nm. Hyperspectral imaging provides high resolution macroscopic images in both the spatial and spectral dimensions over a time frame of seconds. Energy states introduced in the bandgap of Si from crystal imperfections resulted in increased recombination of photogenerated free charge carriers. Spectral resolution in the near infrared enabled us to spatially image specific radiative recombination processes through traps in the Si bandgap. Hyperspectral imaging is a fast, non-contact, and non-destructive method, giving it potential for industrial applications.
Show PACS
78.55.Ap Elemental semiconductors
61.72.Mm Grain and twin boundaries
71.20.Mq Elemental semiconductors
71.55.Cn Elemental semiconductors

Photoreflectance study of N- and Sb-related modifications of the energy gap and spin-orbit splitting in InNAsSb alloys

R. Kudrawiec, M. Latkowska, J. Misiewicz, Q. Zhuang, A. M. R. Godenir, and A. Krier

Appl. Phys. Lett. 99, 011904 (2011); http://dx.doi.org/10.1063/1.3607479 (3 pages) | Cited 4 times

Online Publication Date: 6 July 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Photoreflectance spectroscopy has been used to study the energy gap and spin-orbit splitting in InNAsSb alloys containing different amounts of nitrogen and antimony. It has been observed that nitrogen mainly affects the conduction band, without having any influence on the spin-orbit splitting, whereas antimony significantly modifies the spin-orbit splitting. The N- and Sb-related modifications to the band structure lead to alloys which have a spin orbit splitting larger than the energy gap. Consequently, InNAsSb alloys are very promising for use in optoelectronic devices since they offer a route towards the reduction of non-radiative Auger recombination.
Show PACS
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.20.-e Optical properties of bulk materials and thin films
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Modulation of strain, resistance, and capacitance of tantalum oxide film by converse piezoelectric effect

Yanmin Jia, Xiangling Tian, Jianxiao Si, Shihua Huang, Zheng Wu, and Chenchen Zhu

Appl. Phys. Lett. 99, 011905 (2011); http://dx.doi.org/10.1063/1.3609012 (3 pages)

Online Publication Date: 7 July 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We deposited tantalum oxide film on a laminate structure composed of a Si substrate and a piezoelectric 0.72Pb(Mg1/3Nb2/3)O3–0.28PbTiO3 single crystal and achieved in situ modulation of the resistance and capacitance of the Ta2O5 film. The modulation arises from the induced lattice strain in the Ta2O5 film, which is induced by the electric-field-induced strain in the piezoelectric crystal. Under an external electric field of ∼2 kV/cm, the longitudinal gauge factor of the Ta2O5 film is ∼3300. The control of the strain using the converse piezoelectric effect may be further extended to tune the intrinsic strain of other oxide thin films.
Show PACS
73.61.Ng Insulators
68.55.aj Insulators
77.55.hn Other piezoelectric or electrostrictive films

Dynamic heat flux experiments in Cu67.64Zn16.71Al15.65: Separating the time scales of fast and ultra-slow kinetic processes in martensitic transformations

F. J. Romero, J. Manchado, J. M. Martín-Olalla, M. C. Gallardo, and E. K. H. Salje

Appl. Phys. Lett. 99, 011906 (2011); http://dx.doi.org/10.1063/1.3609239 (3 pages) | Cited 5 times

Online Publication Date: 7 July 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Crackling noise and avalanches during the martensite phase transformation of Cu67.64Zn16.71Al15.65 were investigated. Heat flux measurements with extremely slow heating rates of 0.005 Kh−1 allowed sufficient separation between the continuous background and the avalanche jerks. The jerk enthalpy is below 3% of the total transformation enthalpy. The crackling noise follows power law behavior with an energy exponent near ɛ = 1.8. The jerks are almost uncorrelated with approximately a Poisson distribution of the waiting times between jerks. Quantitative analysis showed a scaling behavior with p(wt) ∼ wt(γ−1)exp(−wt/τ)n with γ = 0.7 and n ≈ 1.
Show PACS
81.30.Kf Martensitic transformations
64.70.K- Solid-solid transitions
65.40.G- Other thermodynamical quantities

Ultrafast carrier dynamics in gold/iron-oxide nanocrystal heterodimers

Kseniya Korobchevskaya, Chandramohan George, Alberto Diaspro, Liberato Manna, Roberto Cingolani, and Alberto Comin

Appl. Phys. Lett. 99, 011907 (2011); http://dx.doi.org/10.1063/1.3609324 (3 pages) | Cited 6 times

Online Publication Date: 7 July 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Colloidal nanocrystal heterodimers composed of a gold domain and an iron oxide domain have been investigated by femtosecond transient absorption spectroscopy. The measured decay times were compared with the ones obtained from samples of “only” gold nanocrystals and iron oxide nanocrystals. Our results indicate that there is no significant charge transfer at the interface between gold and iron oxide in heterodimers.
Show PACS
71.70.-d Level splitting and interactions
82.70.Dd Colloids
78.47.J- Ultrafast spectroscopy (<1 psec)
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

High-pressure Raman scattering in wurtzite indium nitride

J. Ibáñez, F. J. Manjón, A. Segura, R. Oliva, R. Cuscó, R. Vilaplana, T. Yamaguchi, Y. Nanishi, and L. Artús

Appl. Phys. Lett. 99, 011908 (2011); http://dx.doi.org/10.1063/1.3609327 (3 pages) | Cited 2 times

Online Publication Date: 7 July 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We perform Raman-scattering measurements at high hydrostatic pressures on c-face and a-face InN layers to investigate the high-pressure behavior of the zone-center optical phonons of wurtzite InN. Linear pressure coefficients and mode Grüneisen parameters are obtained, and the experimental results are compared with theoretical values obtained from ab initio lattice-dynamical calculations. Good agreement is found between the experimental and calculated results.
Show PACS
78.30.Fs III-V and II-VI semiconductors
62.50.-p High-pressure effects in solids and liquids
63.20.Ry Anharmonic lattice modes

Infinitely stiff composite via a rotation-stabilized negative-stiffness phase

D. M. Kochmann and W. J. Drugan

Appl. Phys. Lett. 99, 011909 (2011); http://dx.doi.org/10.1063/1.3609328 (3 pages) | Cited 3 times

Online Publication Date: 7 July 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We show that an elastic composite material having a component with sufficiently negative stiffness to produce positive-infinite composite stiffness can be stabilized by the gyroscopic forces produced by composite rotation.
Show PACS
46.40.Ff Resonance, damping, and dynamic stability
62.20.de Elastic moduli
83.80.Ab Solids: e.g., composites, glasses, semicrystalline polymers
62.25.Jk Mechanical modes of vibration
46.05.+b General theory of continuum mechanics of solids

Scaling of reliability of gold interconnect lines subjected to alternating current

M. Wang, B. Zhang, G. P. Zhang, and C. S. Liu

Appl. Phys. Lett. 99, 011910 (2011); http://dx.doi.org/10.1063/1.3609779 (3 pages)

Online Publication Date: 7 July 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present an investigation of damage morphologies of small-scale gold interconnect lines subjected to thermal fatigue strain generated by alternating current. Fractal dimension analysis reveals a general scaling relation between the critical strain range causing thermal fatigue damage and the ratio of the width to the thickness of the metal line. Such the scaling rule may be useful in controlling reliability of the metal interconnect lines subjected to long-term thermal cyclic strain.
Show PACS
85.40.Ls Metallization, contacts, interconnects; device isolation
85.40.Qx Microcircuit quality, noise, performance, and failure analysis

Interatomic potential to calculate the driving force, optimized composition, and atomic structure of the Cu-Hf-Al metallic glasses

Y. Y. Cui, J. H. Li, Y. Dai, and B. X. Liu

Appl. Phys. Lett. 99, 011911 (2011); http://dx.doi.org/10.1063/1.3609861 (3 pages) | Cited 2 times

Online Publication Date: 7 July 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An interatomic potential is proposed for the Cu-Hf-Al system and applied in molecular dynamics/statics simulations. Simulations predict a hexagonal composition region for the Cu-Hf-Al metallic glass formation. Kinetically, a local maximum driving force, defined by energy difference between the solid solution and disordered state, is predicted to be at Cu48Hf41Al11, close to the experimentally measured optimized composition. Moreover, Voronoi tessellation analysis shows that though the icosahedron and icosidihedron are dominant configurations, the fractions of both icosihexahedron and icosioctahedron decrease with increasing Al content, correlating closely with the atomic radii and the heat of mixing of the component metals.
Show PACS
64.70.pe Metallic glasses
64.75.Nx Phase separation and segregation in solid solutions
61.43.Fs Glasses
71.15.Pd Molecular dynamics calculations (Car-Parrinello) and other numerical simulations

Temperature dependence of Raman scattering from 4H-SiC with hexagonal defects

R. Han, B. Han, D. H. Wang, and C. Li

Appl. Phys. Lett. 99, 011912 (2011); http://dx.doi.org/10.1063/1.3609009 (3 pages) | Cited 1 time

Online Publication Date: 8 July 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Noncontact temperature measurements based on Raman scattering were performed on 4H-SiC with hexagonal defects. These measurements show that the four-phonon process makes a greater contribution to the E2(TO) mode than to the E1(TO) mode. The longer lifetimes of E2(TO) and E1(TO) phonons in hexagonal defects demonstrate that there are fewer possible decay channels than in the defect free zone. The absence of electronic Raman peaks in the hexagonal defects suggests that hexagonal defects seriously limit the uniformity of the nitrogen distribution. The intensity of electronic Raman spectra is related to the density of neutral nitrogen atoms.
Show PACS
78.30.Hv Other nonmetallic inorganics
63.20.dd Measurements
61.72.Nn Stacking faults and other planar or extended defects

Surface plasmon modes guided by Ga-doped ZnO layers bounded by different dielectrics

Wasanthamala Badalawa, Hiroaki Matsui, Akifumi Ikehata, and Hitoshi Tabata

Appl. Phys. Lett. 99, 011913 (2011); http://dx.doi.org/10.1063/1.3608313 (3 pages) | Cited 3 times

Online Publication Date: 8 July 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report two types of surface plasmon (SP) modes guided by a Ga-doped ZnO (ZnO:Ga) layer bounded between air and glass. A symmetric SP (s-) mode having leaky waves was found at an air-ZnO interface by attenuated total reflection measurements and showed a cutoff thickness region from 141 to 107 nm. Consequently, only an asymmetric SP (a-) mode bound at a ZnO-glass interface remained, as confirmed by numerical analyses and finite-difference time-domain simulations. s- and a-modes of the ZnO:Ga layer exhibited a high cutoff thickness and a strongly confined SP field at air-ZnO and ZnO-glass interfaces, respectively.
Show PACS
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.55.Gs II-VI semiconductors
73.61.Ga II-VI semiconductors
78.66.Hf II-VI semiconductors
71.20.Nr Semiconductor compounds
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Magneto-absorption spectra of Bernal graphite

Yen-Hung Ho, Yu-Huang Chiu, Wu-Pei Su, and Ming-Fa Lin

Appl. Phys. Lett. 99, 011914 (2011); http://dx.doi.org/10.1063/1.3608383 (3 pages) | Cited 1 time

Online Publication Date: 8 July 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
With the availability of Landau wave functions in real space, we investigate the magneto-optical spectra of ordinary bulk graphite within a tight-binding model. The interlayer interactions significantly affect the structure, frequency and intensity of absorption peaks, as well as their field evolution and the double-peak absorptions. Those unique features of the absorption constitute important characterization of graphite and serve to differentiate the bulk spectra from those of true monolayer and bilayer graphenes.
Show PACS
78.20.Ls Magneto-optical effects
81.05.uf Graphite
71.70.Di Landau levels
78.67.Wj Optical properties of graphene
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)
73.22.Pr Electronic structure of graphene
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close