APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 99 / Issue 22 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 99, 221112 (2011); http://dx.doi.org/10.1063/1.3664769 (3 pages)

Induced terahertz emission as a probe for semiconductor devices

Patrick Hoyer1, Gabor Matthäus2, Ulrike Blumröder2, Kevin Füchsel2, and Stefan Nolte2

1Fraunhofer Gesellschaft, Headquarters, Hansastrasse 27c, München D-80686, Germany
2Institute of Applied Physics, Friedrich-Schiller-University Jena, Max-Wien-Platz 1, Jena D-07743, Germany

View MapView Map

(Received 12 May 2011; accepted 8 November 2011; published online 2 December 2011)

A nondestructive and contact free method for the characterization of semiconductor devices is presented using stimulated terahertz (THz) emission. For demonstration purposes, nanostructured semiconductor-insulator-semiconductor solar cells are investigated. These solar cells are based on indium tin oxide (ITO) upon black silicon (BS). During illumination with fs laser pulses, free charge carriers are generated at the junction between ITO and BS yielding the emission of broadband THz radiation. Since the THz field strength depends on the acceleration characteristics of the photoinduced charge carriers, phase sensitive detection of the emitted THz signal reflects the existing electric field distribution at the boundary zone. In contrast to existing methods where the sample is illuminated by an additional THz generator, here, the THz emission itself characterizes the sample. Moreover, only the region of THz generation is probed yielding a depth-resolved measurement setup that can be applied for the investigation of semiconductor multilayer systems in general as far as THz generation is supported.

© 2011 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

elemental semiconductors, high-speed optical techniques, indium compounds, multilayers, nanostructured materials, semiconductor-insulator-semiconductor devices, silicon, solar cells, terahertz wave generation

PACS

  • 88.40.hj

    Efficiency and performance of solar cells

  • 88.40.J-

    Types of solar cells

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3664769

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    P. Gu, M. Tani, S. Kono, K. Sakai, and X.-C. Zhang, J. Appl. Phys. 91, 5533 (2002)JAPIAU000091000009005533000001.

    S. Koynov, M. S. Brandt, and M. Stutzmann, Appl. Phys. Lett. 88, 203107 (2006)APPLAB000088000020203107000001.

    P. Hoyer, M. Theuer, R. Beigang, and E.-B. Kley, Appl. Phys. Lett. 93, 091106 (2008)APPLAB000093000009091106000001.

    J. Shewchun, D. Burk, R. Singh, M. Spitzer, and J. Dubow, J. Appl. Phys. 50, 6524 (1979)JAPIAU000050000010006524000001.

    J. Shewchun, J. Dubow, A. Myszkowski, and R. Singh, J. Appl. Phys. 49, 855 (1978)JAPIAU000049000002000855000001.

    D. Hinken, K. Bothe, K. Ramspeck, S. Herlufsen, and R. Brendel, J. Appl. Phys. 105, 104516 (2009)JAPIAU000105000010104516000001.


Figures (5)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Induced terahertz emission as a probe for semiconductor devices
  2. Charged basal stacking fault scattering in nitride semiconductors
  3. Enhanced critical temperature in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films on silicon
  4. Metal-insulator transition and electrically driven memristive characteristics of SmNiO3 thin films
  5. Erratum: “Investigation of the electrocaloric effect in a PbMg1/3Nb2/3O3–PbTiO3 relaxor thin film” [ Appl. Phys. Lett. 95, 182904 (2009) ]
Go to AIP Home
Copyright © American Institute of Physics
close