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Applied Physics Letters / Volume 99 / Issue 22 / DEVICE PHYSICS

Appl. Phys. Lett. 99, 223510 (2011); http://dx.doi.org/10.1063/1.3665070 (3 pages)

The influence of charged InAs quantum dots on the conductance of a two-dimensional electron gas: Mobility vs. carrier concentration

B. Marquardt1, A. Beckel1, A. Lorke1, A. D. Wieck2, D. Reuter2, and M. Geller1

1Fakultät für Physik and CeNIDE, Universität Duisburg-Essen, Lotharstraße 1, 47048 Duisburg, Germany
2Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstraße 150, 44780 Bochum, Germany

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(Received 29 September 2011; accepted 10 November 2011; published online 30 November 2011)

Using time-resolved transport spectroscopy, we investigate the influence of charge-tunable InAs quantum dots (QDs) on the conductance of a nearby two-dimensional electron gas (2DEG). Loading successively electrons into the self-assembled QDs decreases the carrier concentration and mobility in the 2DEG. We are able to quantify how these transport properties change for each additional charge in the s- or p-shell. It is found that mobility and carrier concentration contribute equally to the overall change in conductance.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

carrier density, carrier mobility, electrical conductivity, III-V semiconductors, indium compounds, self-assembly, semiconductor quantum dots, time resolved spectra, two-dimensional electron gas

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3665070

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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