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28 Nov 2011

Volume 99, Issue 22, Articles (22xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 99, 221902 (2011); http://dx.doi.org/10.1063/1.3663578 (3 pages)

Aparna Deshpande, Kai Felix Braun, and Saw-Wai Hla
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Phase transition sequence in sodium bismuth titanate observed using high-resolution x-ray diffraction

Elena Aksel, Jennifer S. Forrester, Benjamin Kowalski, Jacob L. Jones, and Pam A. Thomas

Appl. Phys. Lett. 99, 222901 (2011); http://dx.doi.org/10.1063/1.3664393 (3 pages) | Cited 11 times

Online Publication Date: 28 November 2011

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High resolution powder x-ray diffraction patterns of Na0.5Bi0.5TiO3 at selected temperatures were examined to compare structural changes with observed piezoelectric thermal depoling temperatures. The depoling temperatures do not correlate with discrete phase transition temperatures, and therefore, a structural transition is not the origin of thermal depoling. Rather, a correlation is made with an increase in volume fraction of material which does not obey the long-range Cc space group. The origin of the thermal depoling behavior may be the loss of long-range ferroelectric order by a decreasing proportion of the Cc phase or the associated percolation of disordered nano-scale platelets.
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64.70.K- Solid-solid transitions
77.65.-j Piezoelectricity and electromechanical effects
77.80.B- Phase transitions and Curie point

Influence of strain on the electronic structure of the TbMnO3/SrTiO3 epitaxial interface

S. Venkatesan, M. Döblinger, C. Daumont, B. Kooi, B. Noheda, J. T. M. De Hosson, and C. Scheu

Appl. Phys. Lett. 99, 222902 (2011); http://dx.doi.org/10.1063/1.3663218 (3 pages)

Online Publication Date: 29 November 2011

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Understanding the magnetotransport properties of epitaxial strained thin films requires knowledge of the chemistry at the interface. We report on the change in Mn electronic structure at the epitaxially strained TbMnO3/SrTiO3 interface. Scanning transmission electron microscopy shows an abrupt interface with a bright contrast, indicating the presence of misfit strain. Electron energy loss spectroscopy displays a chemical shift of the Mn L2,3 edge together with a high white line intensity ratio revealing a reduction in the nominal Mn oxidation state in the first 3–4 monolayers. These observations indicate misfit strain significantly changes the electronic structure at the interface.
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77.55.Nv Multiferroic/magnetoelectric films
77.80.bn Strain and interface effects
77.84.Cg PZT ceramics and other titanates
72.20.My Galvanomagnetic and other magnetotransport effects

Suppression of dielectric crystallization on metal by introduction of SiO2 layer for metal floating gate memory blocking oxide

Srikant Jayanti and Veena Misra

Appl. Phys. Lett. 99, 222903 (2011); http://dx.doi.org/10.1063/1.3661173 (3 pages)

Online Publication Date: 29 November 2011

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A technique of reducing the higher degree of dielectric crystallization on polycrystalline metal has been investigated by inserting a thin SiO2 layer interfacing the metal for application as high-k blocking oxide in metal floating gate FLASH memories. Grazing incidence x-ray diffraction study showed that the insertion of an amorphous interfacial layer (IL) suppresses the crystallization of HfAlO blocking oxide considerably. The electrical performance of the blocking oxide stacks was characterized using metal-insulator-metal capacitors, and the thermal stability was observed to improve by more than an order of magnitude with the incorporation of SiO2 IL.
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73.40.Rw Metal-insulator-metal structures
77.22.Ch Permittivity (dielectric function)
77.55.D- High-permittivity gate dielectric films
61.43.-j Disordered solids

Domain structure and in-plane switching in a highly strained Bi0.9Sm0.1FeO3 film

Weigang Chen, Wei Ren, Lu You, Yurong Yang, Zuhuang Chen, Yajun Qi, Xi Zou, Junling Wang, Thirumany Sritharan, Ping Yang, L. Bellaiche, and Lang Chen

Appl. Phys. Lett. 99, 222904 (2011); http://dx.doi.org/10.1063/1.3664394 (3 pages) | Cited 2 times

Online Publication Date: 29 November 2011

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We report the domain structure and ferroelectric properties of a 32 nm-thick Bi0.9Sm0.1FeO3 film epitaxially grown on a LaAlO3 (LAO) substrate. This film exhibits a monoclinic Mc phase, with its monoclinic distortion and anisotropy of in-plane (IP) lattice parameters being both smaller than those of pure BiFeO3 (BFO) grown on LaAlO3. Polarization hysteresis loops measured using a quasi-planar capacitor show an in-plane polarization up to 30 μC/cm2. Piezoresponse force microcopy demonstrates that a 180° in-plane polarization switching accompanied by a 90° domain wall rotation takes place after electric poling. First-principles calculations suggest the differences between highly strained Sm-substituted and pure BiFeO3.
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77.55.Nv Multiferroic/magnetoelectric films
75.85.+t Magnetoelectric effects, multiferroics
77.80.Fm Switching phenomena
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization

Reduction of leakage currents with nanocrystals embedded in an amorphous matrix in metal-insulator-metal capacitor stacks

A. Krause, W. M. Weber, U. Schröder, D. Pohl, B. Rellinghaus, J. Heitmann, and T. Mikolajick

Appl. Phys. Lett. 99, 222905 (2011); http://dx.doi.org/10.1063/1.3664395 (3 pages)

Online Publication Date: 29 November 2011

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CaTiO3 layers with varying thicknesses in metal-insulator-metal capacitor stacks were deposited at 550 °C using radio-frequency magnetron sputtering. The combination of electrical and transmission electron microscopy measurements allows a correlation of k-value and leakage current to the degree of crystallinity. Experiments show that higher crystallinity and, therefore, higher k-values lead to increasing leakage currents and change of conduction mechanisms. However, leakage currents are significantly reduced when crystallites are embedded in an amorphous matrix. Selective growth of these crystallites is owed to cube-on-cube nucleation of CaTiO3 on {011} Pt.
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84.32.Tt Capacitors
85.40.Sz Deposition technology
81.15.Cd Deposition by sputtering

Bonding principles of passivation mechanism at III-V-oxide interfaces

J. Robertson and L. Lin

Appl. Phys. Lett. 99, 222906 (2011); http://dx.doi.org/10.1063/1.3665061 (3 pages) | Cited 10 times

Online Publication Date: 30 November 2011

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We analyze the conditions necessary to passivate interfacial defects at III-V-oxide interfaces, in terms of an electron-counting rule. We propose that this rule, previously used to describe reconstructions at GaAs or ZnSe surfaces, acts during oxide growth or deposition, atomic layer by atomic layer. The need to satisfy this rule continuously drives the creation of interface defects, whose states can lie in the bulk band gap of the semiconductor.
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81.65.Rv Passivation
73.20.At Surface states, band structure, electron density of states
81.05.Ea III-V semiconductors
71.55.Eq III-V semiconductors

Interface composition of InAs nanowires with Al2O3 and HfO2 thin films

R. Timm, M. Hjort, A. Fian, B. M. Borg, C. Thelander, J. N. Andersen, L.-E. Wernersson, and A. Mikkelsen

Appl. Phys. Lett. 99, 222907 (2011); http://dx.doi.org/10.1063/1.3664399 (3 pages) | Cited 4 times

Online Publication Date: 30 November 2011

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Vertical InAs nanowires (NWs) wrapped by a thin high-κ dielectric layer may be a key to the next generation of high-speed metal-oxide-semiconductor devices. Here, we have investigated the structure and chemical composition of the interface between InAs NWs and 2 nm thick Al2O3 and HfO2 films. The native oxide on the NWs is significantly reduced upon high-κ deposition, although less effective than for corresponding planar samples, resulting in a 0.8 nm thick interface layer with an In-/As-oxide composition of about 0.7/0.3. The exact oxide reduction and composition including As-suboxides and the role of the NW geometry are discussed in detail.
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68.65.La Quantum wires (patterned in quantum wells)
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
77.55.D- High-permittivity gate dielectric films
81.07.Bc Nanocrystalline materials
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