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Appl. Phys. Lett. 99, 231108 (2011); http://dx.doi.org/10.1063/1.3666423 (3 pages)

Saturation effects in femtosecond laser ablation of silicon-on-insulator

Hao Zhang, D. van Oosten, D. M. Krol, and J. I. Dijkhuis

Debye Institute for Nanomaterials Science, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, The Netherlands

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(Received 3 October 2011; accepted 15 November 2011; published online 8 December 2011)

We report a surface morphology study on single-shot submicron features fabricated on silicon on insulator by tightly focused femtosecond laser pulses. In the regime just below single-shot ablation threshold nano-tips are formed, whereas in the regime just above single-shot ablation threshold, a saturation in the ablation depth is found. We attribute this saturation by secondary laser absorption in the laser-induced plasma. In this regime, we find excellent agreement between the measured depths and a simple numerical model. When the laser fluence is further increased, a sharp increase in ablation depth is observed accompanied by a roughening of the ablated hole.

© 2011 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 52.38.Mf

    Laser ablation

  • 78.47.J-

    Ultrafast spectroscopy (<1 psec)

  • 68.47.-b

    Solid-gas/vacuum interfaces: types of surfaces

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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