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Appl. Phys. Lett. 99, 231908 (2011); http://dx.doi.org/10.1063/1.3669412 (3 pages)

Carrier dynamics and activation energy of CdTe quantum dots in a CdxZn1−xTe quantum well

W. I. Han1, J. H. Lee1, J. S. Yu1, J. C. Choi1, and H. S. Lee2

1Department of Physics, Yonsei University, Wonju 220-710, South Korea
2Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju 500-712, South Korea

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(Received 9 November 2011; accepted 21 November 2011; published online 8 December 2011)

We investigate the optical properties of CdTe quantum dots (QDs) in a Cd0.3Zn0.7Te quantum well (QW) grown on GaAs (100) substrates. Carrier dynamics of CdTe/ZnTe QDs and quantum dots-in-a-well (DWELL) structure is studied using time-resolved photoluminescence (PL) measurements, which show the longer exciton lifetime of the DWELL structure. The activation energy of the electrons confined in the DWELL structure, as obtained from the temperature-dependent PL spectra, was also higher than that of electrons confined in the CdTe/ZnTe QDs. This behavior is attributed to the better capture of carriers into QDs within the surrounding QW.

© 2011 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 73.50.Gr

    Charge carriers: generation, recombination, lifetime, trapping, mean free paths

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

  • 78.67.Hc

    Quantum dots

  • 81.07.Ta

    Quantum dots

  • 78.66.Hf

    II-VI semiconductors

  • 78.47.jd

    Time resolved luminescence

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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