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Applied Physics Letters / Volume 99 / Issue 23 / DEVICE PHYSICS

Appl. Phys. Lett. 99, 233507 (2011); http://dx.doi.org/10.1063/1.3668087 (4 pages)

Spin injection from two-dimensional electron and hole gases in resonant tunneling diodes

Y. Galvão Gobato1, H. V. A. Galeti1, L. F. dos Santos1, V. López-Richard1, D. F. Cesar1, G. E. Marques1, M. J. S. P. Brasil2, M. Orlita3,4, J. Kunc3,4, D. K. Maude3, M. Henini5, and R. J. Airey6

1Universidade Federal de São Carlos, Departamento de Física, 13560-905 São Carlos, SP, Brazil
2Instituto de Física “Gleb Wataghin,” Universidade Estadual de Campinas 13083-970, Campinas, SP, Brazil
3Grenoble High Magnet Field Laboratory, Grenoble, France
4Institute of Physics, Charles University, Ke Karlovu 5, 121 16 Praha 2, Czech Republic
5School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham, Nottingham NG7 2RD, United Kingdom
6EPSRC National Centre for III-V Technologies, The University of Sheffield, Sheffield, United Kingdom

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(Received 10 August 2011; accepted 19 November 2011; published online 8 December 2011)

We have investigated the polarized-resolved photoluminescence from the contact layers and the quantum-well in an n-type GaAs/GaAlAs resonant tunneling diode for magnetic fields up to 19 T. The optical emission from the GaAs contact layers comprises the recombination from highly spin-polarized two-dimensional electron and hole gases with free tunneling carriers. Both the energy position and intensity of this indirect recombination are voltage-dependent and show remarkably abrupt variations near scattering-assisted tunneling resonances. Our results show that these two dimensional gases act as spin-polarized sources for carriers tunneling through the well in resonant tunneling diodes.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, gallium arsenide, III-V semiconductors, photoluminescence, resonant tunnelling diodes, semiconductor quantum wells, spin polarised transport, two-dimensional electron gas, two-dimensional hole gas

PACS

  • 72.25.-b

    Spin polarized transport

  • 73.21.-b

    Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

  • 78.55.Cr

    III-V semiconductors

  • 85.30.Kk

    Junction diodes

  • 68.65.Fg

    Quantum wells

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3668087

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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