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Applied Physics Letters / Volume 99 / Issue 23 / DEVICE PHYSICS

Appl. Phys. Lett. 99, 233508 (2011); http://dx.doi.org/10.1063/1.3665630 (3 pages)

Probing the electrostatics of self-assembled monolayers by means of beveled metal-oxide-semiconductor structures

Lior Kornblum1,2, Yair Paska2,3, Jonathan A. Rothschild1,2, Hossam Haick2,3, and Moshe Eizenberg1,2

1Department of Materials Engineering, Technion—Israel Institute of Technology, Haifa 32000, Israel
2The Russell Berrie Nanotechnology Institute, Technion—Israel Institute of Technology, Haifa 32000, Israel
3Department of Chemical Engineering, Technion—Israel Institute of Technology, Haifa 32000, Israel

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(Received 10 August 2011; accepted 14 November 2011; published online 9 December 2011)

A method is proposed for characterization of the electrostatics of self-assembled monolayers (SAMs). The method is based on the extraction of the metal’s effective work function in metal-oxide-semiconductor capacitors, where the SAM is positioned at the metal-oxide interface. Hexyltrichlorosilane molecules assembled on SiO2 are used as a model system for this method. A band offset of 0.5 ± 0.15 eV is observed in the SAM sample when compared to a reference with no molecules. Spectroscopy is employed to confirm the presence of silane anchoring groups after metal deposition.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

electrostatics, MIS structures, monolayers, MOS capacitors, self-assembly, silicon compounds, surface potential, work function

PACS

  • 68.47.Pe

    Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces

  • 73.40.Cg

    Contact resistance, contact potential

  • 73.40.Qv

    Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3665630

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    References

    O. Shaya, H. Einati, N. Fishelson, Y. Shacham-Diamand, and Y. Rosenwaks, Appl. Phys. Lett. 97, 053501 (2010)APPLAB000097000005053501000001.

    A. Scott, C., Risko, N. Valley, M. A. Ratner, and D. B. Janes, J. Appl. Phys. 107, 024505 (2010)JAPIAU000107000002024505000001

    T. H. Ning, J. Appl. Phys. 49, 4077 (1978)JAPIAU000049000007004077000001.

    Y. Paska and H. Haick, Appl. Phys. Lett. 95, 233103 (2009)APPLAB000095000023233103000001.

    A. V. Walker, T. B. Tighe, J. Stapleton, B. C. Haynie, S. Upilli, D. L. Allara, and N. Winograd, Appl. Phys. Lett. 84, 4008 (2004)APPLAB000084000020004008000001.

    H. Haick, J. Ghabboun, and D. Cahen, Appl. Phys. Lett. 86, 042113 (2005)APPLAB000086000004042113000001.


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