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5 Dec 2011

Volume 99, Issue 23, Articles (23xxxx)

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Appl. Phys. Lett. 99, 233701 (2011); http://dx.doi.org/10.1063/1.3651756 (3 pages)

Melis Hazar, Robert L. Steward, Jr., Chia-Jung Chang, Cynthia J. Orndoff, Yukai Zeng, Mon-Shu Ho, Philip R. LeDuc, and Chao-Min Cheng
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Publisher’s Note: “Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress” [Appl. Phys. Lett. 99, 103510 (2011)]

V. Iglesias, M. Lanza, K. Zhang, A. Bayerl, M. Porti, M. Nafría, X. Aymerich, G. Benstetter, Z. Y. Shen, and G. Bersuker

Appl. Phys. Lett. 99, 239901 (2011); http://dx.doi.org/10.1063/1.3666227 (1 page)

Online Publication Date: 6 December 2011

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99.10.Fg Publisher's note
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Publisher’s Note: “A study of spin isomer conversion kinetics in supercritical fluid hydrogen for cryogenic fuel storage technologies” [Appl. Phys. Lett. 99, 081906 (2011)]

Manyalibo J. Matthews, Guillaume Petitpas, and Salvador M. Aceves

Appl. Phys. Lett. 99, 239902 (2011); http://dx.doi.org/10.1063/1.3665909 (1 page)

Online Publication Date: 6 December 2011

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99.10.Fg Publisher's note
07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment
88.30.R- Hydrogen storage
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Erratum: “Impact of contact resistance on the transconductance and linearity of graphene transistors” [Appl. Phys. Lett. 98, 183505 (2011)]

Kristen N. Parrish and Deji Akinwande

Appl. Phys. Lett. 99, 239903 (2011); http://dx.doi.org/10.1063/1.3665406 (1 page)

Online Publication Date: 7 December 2011

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99.10.Cd Errata
85.30.Tv Field effect devices
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Erratum on “Determining the defect parameters of the deep aluminum-related defect center in silicon” [Appl. Phys. Lett. 91, 122109 (2007)]

Philipp Rosenits, Thomas Roth, and Stefan W. Glunz

Appl. Phys. Lett. 99, 239904 (2011); http://dx.doi.org/10.1063/1.3652753 (1 page)

Online Publication Date: 9 December 2011

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99.10.Cd Errata
71.55.Cn Elemental semiconductors
61.72.sd Impurity concentration
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