APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

19 Dec 2011

Volume 99, Issue 25, Articles (25xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 99, 253701 (2011); http://dx.doi.org/10.1063/1.3666819 (3 pages)

Jun Huang, Hui Li, Wei Chen, Guo-Hua Lv, Xing-Quan Wang, Guo-Ping Zhang, Kostya Ostrikov, Peng-Ye Wang, and Si-Ze Yang
Enlarge Image | Read More
Page 1 of 4 Pages Next Page | Jump to Page
back to top
RSS Feeds

Tunable and collimated terahertz radiation generation by femtosecond laser pulses

Hitendra K. Malik and Anil K. Malik

Appl. Phys. Lett. 99, 251101 (2011); http://dx.doi.org/10.1063/1.3666855 (3 pages) | Cited 1 time

Online Publication Date: 19 December 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A mechanism is proposed for the generation of tunable terahertz (THz) radiation under the application of two femtosecond laser pulses and an external magnetic field, where quick tunnel ionization is achieved that leads to higher plasma density evolution and large residual current for the efficient THz radiation generation. With the optimization of magnetic field, phase difference, and amplitudes of lasers’ fields, a THz source can be obtained with tunable frequency and power along with a control on the direction of radiation emission.
Show PACS
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
84.40.-x Radiowave and microwave (including millimeter wave) technology
52.80.-s Electric discharges
52.25.-b Plasma properties
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

An ultraviolet photo-detector based on TiO2/water solid-liquid heterojunction

Wen-Jen Lee and Min-Hsiung Hon

Appl. Phys. Lett. 99, 251102 (2011); http://dx.doi.org/10.1063/1.3671076 (3 pages) | Cited 2 times

Online Publication Date: 19 December 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this study, an ultraviolet photodetector (UV-PD) based on TiO2/water solid-liquid heterojunction (SLHJ) is reported. The SLHJ UV-PD exhibits a high photosensitivity, excellent spectral selectivity, linear variations in photocurrent, and fast response. In addition, it is suggested that the spectral response can be tailored and that the performance can be improved through deliberate design of the active layer, electrolyte, and substrate of the SLHJ UV–PD. Moreover, we anticipate this work to be a starting point for more sophisticated commercial photon detection using an SLHJ device.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)

Optical lattices of InGaN quantum well excitons

V. V. Chaldyshev, A. S. Bolshakov, E. E. Zavarin, A. V. Sakharov, W. V. Lundin, A. F. Tsatsulnikov, M. A. Yagovkina, Taek Kim, and Youngsoo Park

Appl. Phys. Lett. 99, 251103 (2011); http://dx.doi.org/10.1063/1.3670499 (4 pages) | Cited 3 times

Online Publication Date: 20 December 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate optical Bragg lattices formed by quasi-two-dimensional excitons in periodic systems of the InGaN quantum wells separated by the GaN barriers. When the Bragg resonance and exciton-polariton resonance are tuned to each-other, the medium exhibits an exciton-mediated resonantly enhanced optical Bragg reflection. The enhancement factor appeared to be larger than 2 for the system of 60 quantum wells. Owing to a high binding energy and oscillator strength of the excitons in InGaN quantum wells, the resonant enhancement was achieved at room temperature.
Show PACS
78.67.De Quantum wells
73.21.Fg Quantum wells
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.50.Wk Mechanical effects of light on material media, microstructures and particles

Phase-locking regimes of photonic crystal nanocavity laser arrays

T. Suhr, P. T. Kristensen, and J. Mørk

Appl. Phys. Lett. 99, 251104 (2011); http://dx.doi.org/10.1063/1.3671151 (3 pages)

Online Publication Date: 20 December 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We model and analyze the dynamical properties of coupled photonic crystal nanocavity lasers. The model includes Purcell enhancement of the spontaneous emission and intercavity coupling. The coupling strength between neighboring cavities is an essential parameter, and by performing finite-difference time-domain calculations, the typical coupling strength is extracted for realistic structures. Phase-locking regimes are identified, and their stability with respect to parameter variation is investigated. The results suggest that quantum well devices are not well suited for phase-locked nanocavity laser array devices.
Show PACS
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.70.Qs Photonic bandgap materials
42.60.Fc Modulation, tuning, and mode locking

Nonlinear behavior of photoluminescence from silicon particles under two-photon excitation

Xingsheng Xu and Shiyoshi Yokoyama

Appl. Phys. Lett. 99, 251105 (2011); http://dx.doi.org/10.1063/1.3665042 (3 pages)

Online Publication Date: 21 December 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Two-photon excited fluorescence (TPEF) under continuous-wave excitation from silicon particles produced by a pulsed laser is investigated. Spectra and images of TPEF from silicon particles are studied under different excitation intensities and operation modes (continuous wave or pulse). It is found that the photoluminescence depends superlinearly on the excitation intensity and that the spectral shape and peaks vary with different silicon particles. The above phenomena show the nonlinear behavior of TPEF from silicon particles, and stimulated emission is a possible process.
Show PACS
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.05.Cy Elemental semiconductors
78.45.+h Stimulated emission
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.55.Ap Elemental semiconductors

Diamond based light-emitting diode for visible single-photon emission at room temperature

A. Lohrmann, S. Pezzagna, I. Dobrinets, P. Spinicelli, V. Jacques, J.-F. Roch, J. Meijer, and A. M. Zaitsev

Appl. Phys. Lett. 99, 251106 (2011); http://dx.doi.org/10.1063/1.3670332 (4 pages) | Cited 4 times

Online Publication Date: 21 December 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Diamond-based p-i-n light-emitting diodes capable of single-photon emission in the visible spectral region at room temperature are discussed. The diodes were fabricated on a high quality single crystal diamond grown by chemical vapor deposition. Implantation of boron and phosphorus ions followed by annealing at a temperature of 1600 °C has been used for doping p-type and n-type areas, respectively. Electrical characterization of the devices demonstrates clear diode behavior. Spectra of electroluminescence generated in the i-area reveal sole emission from the neutral nitrogen-vacancy (NV) defects. Photon antibunching implies single-photon character of this emission when generated by individual NV defects.
Show PACS
85.60.Jb Light-emitting devices
85.30.Kk Junction diodes

Mid-infrared quantitative spectroscopy by comb-referencing of a quantum-cascade-laser: Application to the CO2 spectrum at 4.3 μm

A. Gambetta, D. Gatti, A. Castrillo, G. Galzerano, P. Laporta, L. Gianfrani, and M. Marangoni

Appl. Phys. Lett. 99, 251107 (2011); http://dx.doi.org/10.1063/1.3671081 (3 pages) | Cited 10 times

Online Publication Date: 21 December 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A robust phase-lock of a quantum-cascade-laser to a near-infrared frequency-comb allows absorption spectra of a CO2 gas sample to be acquired at different pressures with extreme repeatability and accuracy by tuning the repetition-rate of the comb, thus ensuring an absolute frequency scale on the acquired spectra. The method proves useful to retrieve traceable spectroscopic parameters such as line-center frequencies, line intensity factors, pressure shift, and pressure broadening coefficients, with unprecedented quality from the metrological point of view.
Show PACS
42.62.Eh Metrological applications; optical frequency synthesizers for precision spectroscopy
42.60.Fc Modulation, tuning, and mode locking
78.30.Hv Other nonmetallic inorganics

Hybrid magneto-optical mode converter made with a magnetic nanoparticles-doped SiO2/ZrO2 layer coated on an ion-exchanged glass waveguide

Hadi Amata, François Royer, Fadi Choueikani, Damien Jamon, François Parsy, Jean-Emmanuel Broquin, Sophie Neveu, and Jean Jacques Rousseau

Appl. Phys. Lett. 99, 251108 (2011); http://dx.doi.org/10.1063/1.3671180 (4 pages)

Online Publication Date: 21 December 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This paper describes the possibility to achieve a TE-TM mode conversion in a magneto-optical hybrid waveguide operating at λ = 1550 nm. This hybrid device is made by coating a SiO2/ZrO2 layer doped with magnetic nanoparticles on an ion-exchanged glass waveguide. Soft annealing (90 °C) and UV treatment, both compatible with the ion exchange process, have been implemented to finalize the magneto-optical film. Optical characterizations that have been carried out demonstrated the efficiency of these hybrid structures in terms of lateral confinement and mode conversion. Indeed, TE to TM mode conversion has been observed when a longitudinal magnetic field is applied to the device. The amount of this conversion is discussed taking into account the distribution of light between the layer and the guide, and the modal birefringence of the structure.
Show PACS
85.70.Sq Magnetooptical devices
42.79.Gn Optical waveguides and couplers

Crystal particle Raman-scattering and applications for improved solar cell performance

Ping Lee, Jason Shank, Komal Magsi, Yeona Kang, and C. M. Fortmann

Appl. Phys. Lett. 99, 251109 (2011); http://dx.doi.org/10.1063/1.3665942 (3 pages)

Online Publication Date: 21 December 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Raman-based spectral modification for improved solar cell (SC) performance was investigated. While, Raman scattering is a weak phenomena commonly used for material characterization, small-sized particles embedded in a light scattering matrix have increased Raman and increased anti-Stokes energy up shift probability; because, embedding particles in a diffusive, transparent matrix vastly increases light path lengths (kilometers) and because optically generated phonons contribute to anti-Stokes probability in long phonon lifetime small particles. Increased long wavelength quantum efficiency was obtained using these layers on silicon SCs. Diffusion theory was applied to the spatial light diffusion and to Raman light energy broadening.
Show PACS
88.40.H- Solar cells (photovoltaics)
02.50.Cw Probability theory

Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

E. H. Steenbergen, B. C. Connelly, G. D. Metcalfe, H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J. M. Fastenau, A. W. K. Liu, S. Elhamri, O. O. Cellek, and Y.-H. Zhang

Appl. Phys. Lett. 99, 251110 (2011); http://dx.doi.org/10.1063/1.3671398 (3 pages) | Cited 13 times

Online Publication Date: 22 December 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Time-resolved photoluminescence measurements reveal a minority carrier lifetime of >412 ns at 77 K under low excitation for a long-wavelength infrared InAs/InAs0.72Sb0.28 type-II superlattice (T2SL). This lifetime represents an order-of-magnitude increase in the minority carrier lifetime over previously reported lifetimes in long-wavelength infrared InAs/Ga1−xInxSb T2SLs. The considerably longer lifetime is attributed to a reduction of non-radiative recombination centers with the removal of Ga from the superlattice structure. This lifetime improvement may enable background limited T2SL long-wavelength infrared photodetectors at higher operating temperatures.
Show PACS
81.05.Ea III-V semiconductors
78.47.jd Time resolved luminescence
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.55.Cr III-V semiconductors

Room temperature lasing with high group index in metal-coated GaN nanoring

Yow-Gwo Wang, Shu-Wei Chang, Cheng-Chang Chen, Ching-Hsueh Chiu, Ming-Yen Kuo, M. H. Shih, and Hao-Chung Kuo

Appl. Phys. Lett. 99, 251111 (2011); http://dx.doi.org/10.1063/1.3671648 (3 pages) | Cited 1 time

Online Publication Date: 22 December 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The room temperature lasing action from a metal-coated GaN nanoring cavity was observed by optical pumping. The GaN nanoring is 7 μm in diameter and 400 nm in width. The quality factor of the cavity is approximately 860 with a threshold power density of 37.5 mJ/cm2. Such a device performance was attributed to the combination of metal-coated nanocavity with whispering-gallery modes. Moreover, the group index extracted from the experiment was 5.99 and was verified with calculations and analyses of the lasing modes as well as their characteristics. The study showed a promising way to further improve the performance of metal-coated nanolasers.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices

Yoshitaka Taniyasu and Makoto Kasu

Appl. Phys. Lett. 99, 251112 (2011); http://dx.doi.org/10.1063/1.3671668 (4 pages) | Cited 15 times

Online Publication Date: 22 December 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
AlN/GaN short-period superlattices (SLs) is experimentally shown to have a different polarization property from AlGaN. As the GaN well thickness decreases from 2.5 to 0.9 monolayers, the emission wavelength decreases from 275.8 to 236.9 nm due to a quantum size effect. Because the quantized energy level for holes originates from the heavy hole band of GaN, the emission is polarized for electric field perpendicular to the c-axis (E⊥c). Consequently, the SLs show intense C-plane emission compared with AlGaN, whose emission is inherently polarized for electric field parallel to the c-axis (E||c). Using the SLs, we demonstrate a E⊥c-polarized deep-ultraviolet (UV) light-emitting diode (LED).
Show PACS
68.65.Cd Superlattices
73.21.Cd Superlattices
78.40.Fy Semiconductors
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
81.07.-b Nanoscale materials and structures: fabrication and characterization

Electroluminescence from Si nanocrystal/c-Si heterojunction light-emitting diodes

Dawei Di, Ivan Perez-Wurfl, Lingfeng Wu, Yidan Huang, Alessandro Marconi, Andrea Tengattini, Aleksei Anopchenko, Lorenzo Pavesi, and Gavin Conibeer

Appl. Phys. Lett. 99, 251113 (2011); http://dx.doi.org/10.1063/1.3671671 (4 pages) | Cited 4 times

Online Publication Date: 22 December 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Silicon nanocrystals have shown attractive properties for photonic and photovoltaic applications. We demonstrate all-Si light-emitting diodes based on boron-doped Si nanocrystal/c-Si p-n heterojunction structure, which show electroluminescence in the visible/infrared regions. The electroluminescence spectra of these diodes can be modified by changing the quantum confining barriers from SiO2 to Si3N4. Our results are an important demonstration of electroluminescence from boron-doped Si nanocrystals—a wide band gap absorber material for third generation photovoltaics.
Show PACS
85.60.Jb Light-emitting devices

Quantum efficiency control of InGaN/GaN multi-quantum-well structures using Ag/SiO2 core-shell nanoparticles

Lee-Woon Jang, Trilochan Sahoo, Dae-Woo Jeon, Myoung Kim, Ju-Won Jeon, Dong-Seob Jo, Min-Kyu Kim, Yeon-Tae Yu, Alexander Y. Polyakov, and In-Hwan Lee

Appl. Phys. Lett. 99, 251114 (2011); http://dx.doi.org/10.1063/1.3671394 (3 pages) | Cited 5 times

Online Publication Date: 23 December 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Photoluminescence (PL) efficiency increase up to 2.8 times was observed for GaN/InGaN multi-quantum-well (MQW) structures as a result of deposition of a thin layer of about 40-nm-diameter Ag nanoparticles (NPs) surrounded by SiO2 shell. These Ag/SiO2 NPs were prepared by sol-gel method. The amount of PL intensity enhancement decreased with increasing the SiO2 shell thickness. PL intensity increase was accompanied by corresponding decrease of PL decay time and is ascribed to a strong coupling of MQW region to localized surface plasmons (LSPs) associated with Ag/SiO2 NPs.
Show PACS
73.21.Fg Quantum wells
73.22.-f Electronic structure of nanoscale materials and related systems
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
71.20.Nr Semiconductor compounds
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

David S. Meyaard, Guan-Bo Lin, Qifeng Shan, Jaehee Cho, E. Fred Schubert, Hyunwook Shim, Min-Ho Kim, and Cheolsoo Sone

Appl. Phys. Lett. 99, 251115 (2011); http://dx.doi.org/10.1063/1.3671395 (3 pages) | Cited 9 times

Online Publication Date: 23 December 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effect of the asymmetry in carrier concentration and mobility is studied in GaInN pn-junction light-emitting diodes (LEDs). We propose and present experimental evidence that the asymmetry in carrier concentration and mobility, and associated high-level injection phenomena, cause efficiency droop in GaInN LEDs. Low temperatures exacerbate the degree of asymmetry of the junction by reducing acceptor ionization, and shift high-injection-phenomena to lower currents. Accordingly, at temperatures near 80 K, we measure a greater droop compared to room temperature. The analysis of temperature-dependent I–V curves shows an excellent correlation between the onset of high-level injection and the onset of droop.
Show PACS
85.60.Jb Light-emitting devices
85.30.Kk Junction diodes

Detecting surface acoustic wave gyroscopic signal by acousto-optic coupling

Shuxiang Lu, Shufen Chen, Honglang Li, Lei Fu, Zhengfeng Zou, and Yanbin Meng

Appl. Phys. Lett. 99, 251116 (2011); http://dx.doi.org/10.1063/1.3671616 (3 pages)

Online Publication Date: 23 December 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A technique for surface acoustic wave (SAW) gyroscopic signal detection by acousto-optic coupling is presented in this article. The principles of the technique and the detection structure were analyzed, and experiments were conducted using the gyroscope. The static results show that the maximum coupling efficiency obtained using this technique is 80.02% when the acousto-optic interaction length is maintained at 15 mm, the SAW electrical power is 99 mW, and the SAW frequency is 168.201 MHz. When the gyroscope was rotating, a linear voltage-rotation response curve was obtained and the sensitivity was approximately 1.2 mV/deg/s.
Show PACS
07.10.-h Mechanical instruments and equipment
42.79.Jq Acousto-optical devices
68.35.Iv Acoustical properties
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
back to top
RSS Feeds

Thermal rectification in multi-walled carbon nanotubes: A molecular dynamics study

Kiarash Gordiz, S. M. Vaez Allaei, and Farshad Kowsary

Appl. Phys. Lett. 99, 251901 (2011); http://dx.doi.org/10.1063/1.3670327 (4 pages) | Cited 2 times

Online Publication Date: 19 December 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Using nonequilibrium molecular dynamics simulations, we show if a multi-walled carbon nanotube (MWNT) is heated asymmetrically, an evident thermal rectification can be detected. We attribute the observed rectification to the asymmetric radial thermal transport between constructing layers in MWNT. The underlying physics is explained by calculating temperature distribution of MWNT layers and phonon power spectrum. Thermal rectification in this carbon nanotube based thermal rectifier does not diminish by increasing the system size, and exists in a wide range of temperatures. These results open a door in the applicability of MWNTs in nanoscale engineering of thermal transport devices.
Show PACS
66.70.Lm Other systems such as ionic crystals, molecular crystals, nanotubes, etc.
61.46.Fg Nanotubes
63.22.Gh Nanotubes and nanowires

Morphology-dependent low-frequency Raman scattering in ultrathin spherical, cubic, and cuboid SnO2 nanocrystals

L. Z. Liu, X. L. Wu, T. H. Li, S. J. Xiong, H. T. Chen, and Paul K. Chu

Appl. Phys. Lett. 99, 251902 (2011); http://dx.doi.org/10.1063/1.3670337 (4 pages)

Online Publication Date: 19 December 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Nanoscale spherical, cubic, and cuboid SnO2 nanocrystals (NCs) are used to investigate morphology-dependent low-frequency Raman scattering. A double-peak structure in which the linewidths and energy separation between two subpeaks decrease with increasing sizes of cuboid NCs is observed and attributed to the surface acoustic phonon modes confined in three dimensional directions and determined by the surface/interface compositions. The decrease in energy separation is due to weaker coupling between the acoustic modes in different vibration directions. Our experimental and theoretical studies clearly disclose the morphology-dependent surface vibrational behavior in self-assembled NCs.
Show PACS
81.16.Dn Self-assembly
63.22.Kn Clusters and nanocrystals
78.30.Hv Other nonmetallic inorganics
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters

Size dependent biexciton binding energies in GaN quantum dots

S. Amloy, K. H. Yu, K. F. Karlsson, R. Farivar, T. G. Andersson, and P. O. Holtz

Appl. Phys. Lett. 99, 251903 (2011); http://dx.doi.org/10.1063/1.3670040 (3 pages) | Cited 3 times

Online Publication Date: 20 December 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Single GaN/Al(Ga)N quantum dots (QDs) have been investigated by means of microphotoluminescence. Emission spectra related to excitons and biexcitons have been identified by excitation power dependence and polarization resolved spectroscopy. All investigated dots exhibit a strong degree of linear polarization (∼90%). The biexciton binding energy scales with the dot size. However, both positive and negative binding energies are found for the studied QDs. These results imply that careful size control of III-Nitride QDs would enable the emission of correlated photons with identical frequencies from the cascade recombination of the biexciton, with potential applications in the area of quantum information processing.
Show PACS
71.20.Nr Semiconductor compounds
78.55.Cr III-V semiconductors
71.35.-y Excitons and related phenomena
73.21.La Quantum dots
71.15.Nc Total energy and cohesive energy calculations
78.67.Hc Quantum dots

Observation of longitudinal-optic-phonon-plasmon-coupled mode in n-type AlGaN alloy films

Jung Gon Kim, Atsuhito Kimura, Yasuhito Kamei, Noriyuki Hasuike, Hiroshi Harima, Kenji Kisoda, Yuki Shimahara, Hideto Miyake, and Kazumasa Hiramatsu

Appl. Phys. Lett. 99, 251904 (2011); http://dx.doi.org/10.1063/1.3670338 (4 pages) | Cited 2 times

Online Publication Date: 20 December 2011

Full Text: Read Online (HTML) | Download PDF


See Also: Erratum

Show Abstract
An longitudinal-optic-phonon-plasmon coupled mode (LOPC) has been clearly observed by Raman scattering in n-type AlxGa1−xN films with x ∼ 0.67 and different carrier densities n = 1 × 1017-9 × 1017 cm−3. The A1-LO-phonon mode showed a systematic frequency shift and broadening with increasing n. This is a characteristic behavior of LOPC as previously observed in n-type binary semiconductors. A theoretical line-shape fitting analysis was conducted for the LOPC profile using n and plasmon-damping rate as adjustable parameter. Assuming m*/m0 = 0.28 for the longitudinal effective mass of electron, the analysis well reproduced carrier density and mobility deduced by Hall measurement.
Show PACS
63.20.kk Phonon interactions with other quasiparticles
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
78.30.Fs III-V and II-VI semiconductors
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
73.61.Ey III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Near zero temperature coefficient of resistivity in antiperovskite Mn3Ni1−xCuxN

Lei Ding, Cong Wang, Lihua Chu, Jun Yan, Yuanyuan Na, Qingzhen Huang, and Xiaolong Chen

Appl. Phys. Lett. 99, 251905 (2011); http://dx.doi.org/10.1063/1.3671183 (4 pages) | Cited 4 times

Online Publication Date: 21 December 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The near zero temperature coefficient of resistivity (NZ-TCR) in Mn-based antiperovskite Mn3Ni1−xCuxN is reported. The temperature range of NZ-TCR is controllable by changing Cu content. Further, the TCR value of 0.09 ppm K−1 was obtained in Mn3Ni0.5Cu0.5N over a broad temperature range around room temperature. The anomalous resistivity change of Mn3Ni1−xCuxN from metal-like to NZ-TCR behavioris apparently due to a magnetic transition. The possible reason for the formation of NZ-TCR is interpreted on the basis of spin-disorder scattering.
Show PACS
72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Sk Insulators
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)

Contactless electroreflectance study of E0 and E0 + ΔSO transitions in In0.53Ga0.47BixAs1−x alloys

R. Kudrawiec, J. Kopaczek, J. Misiewicz, J. P. Petropoulos, Y. Zhong, and J. M. O. Zide

Appl. Phys. Lett. 99, 251906 (2011); http://dx.doi.org/10.1063/1.3669703 (3 pages) | Cited 4 times

Online Publication Date: 21 December 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Energies of E0 and E0 + ΔSO transitions in In0.53Ga0.47BixAs1−x alloys with 0 < x ≤ 0.036 have been studied by contactless electroreflectance spectroscopy at room temperature. It has been clearly observed that the E0 transition shifts to longer wavelengths (∼50 meV/% of Bi), while the E0 + ΔSO transition is approximately unchanged with changes in Bi concentration. These changes in the energies of optical transitions are discussed in the context of the valence band anticrossing model as well as the common anion rule applied to III-V semiconductors.
Show PACS
78.20.Jq Electro-optical effects
71.20.Nr Semiconductor compounds

Off-resonant coupling between a single quantum dot and a nanobeam photonic crystal cavity

Armand Rundquist, Arka Majumdar, and Jelena Vučković

Appl. Phys. Lett. 99, 251907 (2011); http://dx.doi.org/10.1063/1.3671458 (3 pages) | Cited 1 time

Online Publication Date: 21 December 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate off-resonant coupling between a single quantum dot and a nanobeam photonic crystal cavity, under resonant excitation of the quantum dot or the cavity. These results are consistent with previous descriptions of off-resonant coupling as an incoherent phonon-mediated process. The extension of this phenomenon to a nanobeam photonic crystal cavity presents interesting possibilities for coherent control of this interaction by tailoring the phonon density of states.
Show PACS
42.70.Qs Photonic bandgap materials
42.79.-e Optical elements, devices, and systems
42.79.Gn Optical waveguides and couplers
42.50.-p Quantum optics
42.55.Tv Photonic crystal lasers and coherent effects

Strain enhanced electron cooling in a degenerately doped semiconductor

M. J. Prest, J. T. Muhonen, M. Prunnila, D. Gunnarsson, V. A. Shah, J. S. Richardson-Bullock, A. Dobbie, M. Myronov, R. J. H. Morris, T. E. Whall, E. H. C. Parker, and D. R. Leadley

Appl. Phys. Lett. 99, 251908 (2011); http://dx.doi.org/10.1063/1.3670330 (4 pages)

Online Publication Date: 22 December 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 μm3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK–258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.
Show PACS
85.25.Cp Josephson devices

Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures

Feng Wu, E. C. Young, I. Koslow, M. T. Hardy, P. S. Hsu, A. E. Romanov, S. Nakamura, S. P. DenBaars, and J. S. Speck

Appl. Phys. Lett. 99, 251909 (2011); http://dx.doi.org/10.1063/1.3671113 (4 pages) | Cited 10 times

Online Publication Date: 22 December 2011

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this paper, we report on observations of the operation of secondary slip systems to relieve lattice mismatch stress in semipolar InGaN/GaN heterostructures. Two-dimensional arrays of misfit dislocations were observed. Consistent with previous reports, primary relaxation occurred along the projected c direction via primary slip on the (0001) basal plane. In addition, evidence for secondary relaxation was detected in cathodoluminescence spectroscopy, high resolution x-ray diffraction, and transmission electron microscopy (TEM) studies. The secondary misfit dislocations were determined by TEM to have a-type Burgers vectors a/3 〈math110〉 and line directions along 〈4mathmathmath〉, consistent with prismatic slip on one of the m-type planes inclined with respect to the (11math2) growth surface. Evidence of an additional slip system with approximate misfit line direction of type 〈20mathmath〉 is also given.
Show PACS
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
78.60.Hk Cathodoluminescence, ionoluminescence
Page 1 of 4 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close