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Applied Physics Letters / Volume 99 / Issue 25 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 99, 251903 (2011); http://dx.doi.org/10.1063/1.3670040 (3 pages)

Size dependent biexciton binding energies in GaN quantum dots

S. Amloy1,2, K. H. Yu1, K. F. Karlsson1, R. Farivar3, T. G. Andersson3, and P. O. Holtz1

1Department of Physics, Chemistry, and Biology (IFM), Linköping University, S-58183 Linköping, Sweden
2Department of Physics, Faculty of Science, Thaksin University, TH-93110 Phatthalung, Thailand
3Applied Semiconductor Physics, Department of Microtechnology and Nanoscience, Chalmers University of Technology, S-41296 Göteborg, Sweden

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(Received 15 September 2011; accepted 13 November 2011; published online 20 December 2011)

Single GaN/Al(Ga)N quantum dots (QDs) have been investigated by means of microphotoluminescence. Emission spectra related to excitons and biexcitons have been identified by excitation power dependence and polarization resolved spectroscopy. All investigated dots exhibit a strong degree of linear polarization (∼90%). The biexciton binding energy scales with the dot size. However, both positive and negative binding energies are found for the studied QDs. These results imply that careful size control of III-Nitride QDs would enable the emission of correlated photons with identical frequencies from the cascade recombination of the biexciton, with potential applications in the area of quantum information processing.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, biexcitons, binding energy, gallium compounds, III-V semiconductors, photoluminescence, semiconductor quantum dots, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3670040

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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$abstract.society.value is a Member of CrossRef American Institute of Physics

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