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Applied Physics Letters / Volume 99 / Issue 25 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 99, 252103 (2011); http://dx.doi.org/10.1063/1.3669409 (3 pages)

Analysis of hysteresis characteristics of silicon nanowire biosensors in aqueous environment

Hyeri Jang1, Jieun Lee1, Jung Han Lee2, Sungmin Seo3, Byung-Gook Park2, Dong Myong Kim1, Dae Hwan Kim1, and In-Young Chung4

1School of Electrical Engineering, Kookmin University, Seoul 136-702, South Korea
2Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, South Korea
3DRAM Design Team, Samsung Electronics, Hwasung-City, Gyeonggi-Do 445-701, Korea
4Dept. of Electronics and Communications, Kwangwoon University, Seoul 139-701, South Korea

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(Received 25 July 2011; accepted 20 November 2011; published online 20 December 2011)

The hysteresis phenomenon has been widely observed in transfer characteristics of silicon nanowire (SiNW) biosensor devices in aqueous environment. Considering the experimental observation in the change of the liquid potential due to the charge flow through the oxide layer, we build up an electrical model for the biosensor system with the solution, SiNW, dielectric oxide, and the back-gated substrate, and investigate the hysteresis behavior based on the model.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

bioelectric potentials, biomedical electrodes, bioMEMS, biosensors, elemental semiconductors, nanobiotechnology, nanowires, silicon, silicon-on-insulator

PACS

  • 87.85.Rs

    Nanotechnologies-applications

  • 73.40.Qv

    Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

  • 85.85.+j

    Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

  • 87.85.Ox

    Biomedical instrumentation and transducers, including micro-electro-mechanical systems (MEMS)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3669409

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    S. Kar, A. Vijayaraghavan, C. Soldano, S. Talapatra, R. Vajtai, O. Nalamasu, and P. M. Ajayan, Appl. Phys. Lett. 89, 132118 (2006)APPLAB000089000013132118000001.

    K. Lee, P. R. Nair, A. Scott, M. A. Alam, and D. B. Janes, J. Appl. Phys. 105, 102046 (2009)JAPIAU000105000010102046000001.

    P. G. Fernandes, O. Seitz, R. A. Chapman, H. J. Stiegler, H.-C. Wen, Y. J. Chabal, and E. M. Vogel, Appl. Phys. Lett. 97, 034103 (2010)APPLAB000097000003034103000001.

    E. H. Nicollian, C. N. Berglund, P. F. Schmidt, and J. M. Andrews, J. Appl. Phys. 42, 5654 (1971)JAPIAU000042000013005654000001.


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