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Appl. Phys. Lett. 99, 253103 (2011); http://dx.doi.org/10.1063/1.3671150 (3 pages)

Modal dependence of dissipation in silicon nitride drum resonators

V. P. Adiga1, B. Ilic2, R. A. Barton1, I. Wilson-Rae3, H. G. Craighead1, and J. M. Parpia4

1School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA
2Cornell Nanofabrication Facility, Cornell University, Ithaca, New York 14853, USA
3Physics Department, Technische Universität München, Garching, Germany
4Department of Physics, Cornell University, Ithaca, New York 14853, USA

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(Received 27 October 2011; accepted 29 November 2011; published online 20 December 2011)

We have fabricated large (≤400 μm diameter) high tensile stress SiN membrane mechanical resonators and measured the resonant frequency and quality factors (Q) of different modes of oscillation using optical interferometric detection. We observe that the dissipation (Q−1) is limited by clamping loss for pure radial modes, but higher order azimuthal modes are limited by a mechanism which appears to be intrinsic to the material. The observed dissipation is strongly dependent on size of the membrane and mode type. Appropriate choice of size and operating mode allows the selection of optimum resonator designs for applications in mass sensing and optomechanical experiments.

© 2011 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 85.85.+j

    Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

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PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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