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Applied Physics Letters / Volume 99 / Issue 25 / DEVICE PHYSICS

Appl. Phys. Lett. 99, 253503 (2011); http://dx.doi.org/10.1063/1.3671071 (3 pages)

Enhanced rectifying response from metal-insulator-insulator-metal junctions

P. Maraghechi1, A. Foroughi-Abari2, K. Cadien2, and A. Y. Elezzabi1

1Ultrafast Optics and Nanophotonics Laboratory, Department of Electrical and Computer Engineering, University of Alberta, Edmonton, T6G 2V4 Canada
2Department of Chemical and Materials Engineering, University of Alberta, Edmonton, T6G 2V4 Canada

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(Received 28 September 2011; accepted 18 November 2011; published online 20 December 2011)

We present on a metal-insulator-insulator-metal quantum electronic tunneling devices suitable for high speed rectifiers. Through the introduction of double oxide layer between similar metallic electrodes, a cascaded potential barrier is formed which alters the electron tunneling mechanism at forward versus the reverse bias. The cascaded potential barrier engineering manifests itself in both a highly nonlinear and asymmetric I-V junction characteristic. It is envisioned that high speed rectifiers and mixers having extraordinary nonlinearity can be realized through the incorporation of the cascaded potential barrier architecture and dissimilar metallic electrodes.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

electrodes, MIM devices, mixers (circuits), rectifiers

PACS

  • 85.30.Tv

    Field effect devices

  • 84.30.Jc

    Power electronics; power supply circuits

  • 84.30.Qi

    Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3671071

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    A. Sanchez, C. F. Davis, K. C. Liu, and A. Javan, J. Appl. Phys. 49(10), 5270 (1978)JAPIAU000049000010005270000001.

    M. Di Ventra, G. Papp, C. Coluzza, A. Baldereschi, and P. A. Schulz, J. Appl. Phys. 80(7), 4174 (1996)JAPIAU000080000007004174000001.


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