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19 Dec 2011

Volume 99, Issue 25, Articles (25xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 99, 253701 (2011); http://dx.doi.org/10.1063/1.3666819 (3 pages)

Jun Huang, Hui Li, Wei Chen, Guo-Hua Lv, Xing-Quan Wang, Guo-Ping Zhang, Kostya Ostrikov, Peng-Ye Wang, and Si-Ze Yang
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High performance indium-zinc-oxide thin-film transistors fabricated with a back-channel-etch-technique

Hua Xu, Linfeng Lan, Miao Xu, Jianhua Zou, Lei Wang, Dan Wang, and Junbiao Peng

Appl. Phys. Lett. 99, 253501 (2011); http://dx.doi.org/10.1063/1.3670336 (4 pages) | Cited 4 times

Online Publication Date: 19 December 2011

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Indium-zinc-oxide thin-film transistors (TFTs) with back-channel-etch (BCE) structure were demonstrated. A stacked structure of Mo/Al/Mo was used as the source/drain electrodes and patterned by a wet-etch-method. Good etching profile with few residues on the channel was obtained. The TFT showed a field effect mobility of 11.3 cm2 V−1 s−1 and a sub-threshold swing of 0.24 V/decade. The performance of this kind of TFT was better than that of the TFT with etch-stopper-layer structure, which was proved to be due to the lower contact resistance. The BCE-TFTs fabricated with this method have good prospect due to the advantage of low cost.
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85.30.Tv Field effect devices

Fast-switching phase gratings using in-plane addressed short-pitch polymer stabilized chiral nematic liquid crystals

Stephen M. Morris, Damian J. Gardiner, Flynn Castles, Philip J. W. Hands, Timothy D. Wilkinson, and Harry J. Coles

Appl. Phys. Lett. 99, 253502 (2011); http://dx.doi.org/10.1063/1.3670041 (3 pages) | Cited 4 times

Online Publication Date: 20 December 2011

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We demonstrate a fast-switching (sub-millisecond) phase grating based upon a polymer stabilized short-pitch chiral nematic liquid crystal that is electrically addressed using in-plane electric fields. The combination of the short-pitch and the polymer stabilization enables the diffraction pattern to be switched “on” and “off” reversibly in 600 µs. Results are presented on the far-field diffraction pattern along with the intensity of the diffraction orders as a function of the applied electric field and the response times.
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61.30.Vx Polymer liquid crystals
42.79.Dj Gratings

Enhanced rectifying response from metal-insulator-insulator-metal junctions

P. Maraghechi, A. Foroughi-Abari, K. Cadien, and A. Y. Elezzabi

Appl. Phys. Lett. 99, 253503 (2011); http://dx.doi.org/10.1063/1.3671071 (3 pages) | Cited 3 times

Online Publication Date: 20 December 2011

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We present on a metal-insulator-insulator-metal quantum electronic tunneling devices suitable for high speed rectifiers. Through the introduction of double oxide layer between similar metallic electrodes, a cascaded potential barrier is formed which alters the electron tunneling mechanism at forward versus the reverse bias. The cascaded potential barrier engineering manifests itself in both a highly nonlinear and asymmetric I-V junction characteristic. It is envisioned that high speed rectifiers and mixers having extraordinary nonlinearity can be realized through the incorporation of the cascaded potential barrier architecture and dissimilar metallic electrodes.
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85.30.Tv Field effect devices
84.30.Jc Power electronics; power supply circuits
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors

Impact of fluorine treatment on Fermi level depinning for metal/germanium Schottky junctions

Jia-Rong Wu, Yung-Hsien Wu, Chin-Yao Hou, Min-Lin Wu, Chia-Chun Lin, and Lun-Lun Chen

Appl. Phys. Lett. 99, 253504 (2011); http://dx.doi.org/10.1063/1.3666779 (3 pages)

Online Publication Date: 21 December 2011

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CF4 plasma treatment on germanium (Ge) surface is proposed in this work to alleviate the strong Fermi level pinning between metal/Ge, and its effectiveness is also explored for n- and p-type Ge wafers. It is found that samples with CF4 plasma treatment reveal conduction behavior transition between Schottky and ohmic characteristics, a metal-work-function-dependent Schottky barrier height as well as modulated contact resistance, and these results confirm the depinning of Fermi level. This depinning can be explained by the effective capability in passivating dangling bonds at Ge surface through fluorine atoms and the formation of Ge-F binding with partial ionic property, both of which are helpful in decreasing the number of surface states and consequently release the pinning effect.
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73.40.Ns Metal-nonmetal contacts
73.40.Cg Contact resistance, contact potential
81.65.Rv Passivation
71.55.Cn Elemental semiconductors
73.30.+y Surface double layers, Schottky barriers, and work functions

Acoustic trapping of particle by a periodically structured stiff plate

Feiyan Cai, Zhaojian He, Zhengyou Liu, Long Meng, Xin Cheng, and Hairong Zheng

Appl. Phys. Lett. 99, 253505 (2011); http://dx.doi.org/10.1063/1.3670267 (4 pages) | Cited 1 time

Online Publication Date: 23 December 2011

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We present a study on the acoustic radiation forces exerted on a cylindrical particle near the surface of a periodically structured brass plate. When resonance of the structured plate occurs, this configuration shows an interesting trapping effect, which essentially arises from the gradient force induced by gradient vortex velocity field near the surface. This artificial structure for providing a geometrically modulated trapping force may be of interest for acoustic manipulation and sorting in various complex mechanical systems.
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43.40.Dx Vibrations of membranes and plates

Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes

Qifeng Shan, David S. Meyaard, Qi Dai, Jaehee Cho, E. Fred Schubert, Joong Kon Son, and Cheolsoo Sone

Appl. Phys. Lett. 99, 253506 (2011); http://dx.doi.org/10.1063/1.3668104 (3 pages) | Cited 1 time

Online Publication Date: 23 December 2011

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The reverse leakage current of a GaInN light-emitting diode (LED) is analyzed by temperature dependent current–voltage measurements. At low temperature, the leakage current is attributed to variable-range-hopping conduction. At high temperature, the leakage current is explained by a thermally assisted multi-step tunneling model. The thermal activation energies (95–162 meV), extracted from the Arrhenius plot in the high-temperature range, indicate a thermally activated tunneling process. Additional room temperature capacitance–voltage measurements are performed to obtain information on the depletion width and doping concentration of the LED.
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85.60.Jb Light-emitting devices

Flexible, ultrathin, and transparent sound-emitting devices using silver nanowires film

He Tian, Dan Xie, Yi Yang, Tian-Ling Ren, Yu-Xuan Lin, Yu Chen, Yu-Feng Wang, Chang-Jian Zhou, Ping-Gang Peng, Li-Gang Wang, and Li-Tian Liu

Appl. Phys. Lett. 99, 253507 (2011); http://dx.doi.org/10.1063/1.3671332 (4 pages) | Cited 4 times

Online Publication Date: 23 December 2011

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We demonstrated flexible, ultrathin, and transparent sound-emitting devices (SEDs) using silver nanowires (AgNWs). Large area of AgNWs film on substrate was made by dry transfer technique. The sound emission from the AgNWs was measured as a function of power, distance, and frequency. Significant flat and wide frequency responses occurred between 15 and 45 kHz. The sound pressure was in good agreement with theoretical results. This indicates that a thermoacoustic effect exists in AgNWs. The AgNWs-SEDs can be integrated with the liquid crystal display, which shows the potential to be an important component in flexible electronic systems.
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07.64.+z Acoustic instruments and equipment
43.35.Ud Thermoacoustics, high temperature acoustics, photoacoustic effect
43.38.-p Transduction; acoustical devices for the generation and reproduction of sound
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