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19 Dec 2011

Volume 99, Issue 25, Articles (25xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 99, 253701 (2011); http://dx.doi.org/10.1063/1.3666819 (3 pages)

Jun Huang, Hui Li, Wei Chen, Guo-Hua Lv, Xing-Quan Wang, Guo-Ping Zhang, Kostya Ostrikov, Peng-Ye Wang, and Si-Ze Yang
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Metal-oxide-oxide-metal granular tunnel diodes fabricated by anodization

Wenbin Fan, Melissa Commisso Dolph, Jiwei Lu, and Stuart A. Wolf

Appl. Phys. Lett. 99, 252101 (2011); http://dx.doi.org/10.1063/1.3670057 (3 pages)

Online Publication Date: 19 December 2011

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A metal-oxide-oxide-metal (MO-OM) junction was fabricated based on anodized Al and Ta granular metal-oxide tunnel junctions. Electrical transport properties of the MO-OM junction were investigated at various temperatures. A strong asymmetric nonlinear current-voltage curve at room temperature indicated a diode-like behavior with a threshold voltage of 0.19 V under forward bias. The nonlinear current-voltage curves under forward and reverse biases were well fitted separately by the Simmons equation (J. G. Simmons, J. Appl. Phys. 34, 1793 (1963)) with barrier thickness, height, and tunneling area treated as variables.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
81.65.-b Surface treatments

Dependence of spontaneous polarization on stacking sequence in SiC revealed by local Schottky barrier height variations over a partially formed 8H-SiC layer on a 4H-SiC substrate

Kibog Park, Heung Seok Go, Youngeun Jeon, Jonathan P. Pelz, Xuan Zhang, and Marek Skowronski

Appl. Phys. Lett. 99, 252102 (2011); http://dx.doi.org/10.1063/1.3670329 (4 pages)

Online Publication Date: 19 December 2011

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Ballistic electron emission microscopy was used to measure the increase of local Schottky barrier (compared to the surrounding 4H-SiC area) over a partial 8H-SiC layer that is the surface-exposed tail of an 8H stacking fault inclusion extending from 4H substrate. This local increase is believed to be due to polarization charge induced at the interface of partial 8H layer and underlying 4H host, resulting from the spontaneous polarization (SP) difference between SiC regions with different bilayer stacking. This is a direct experimental probe of the dependence of SP in SiC on local stacking sequence by measuring carrier transport.
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77.22.Ej Polarization and depolarization
61.72.Nn Stacking faults and other planar or extended defects
61.72.Qq Microscopic defects (voids, inclusions, etc.)
73.30.+y Surface double layers, Schottky barriers, and work functions
73.61.Le Other inorganic semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Analysis of hysteresis characteristics of silicon nanowire biosensors in aqueous environment

Hyeri Jang, Jieun Lee, Jung Han Lee, Sungmin Seo, Byung-Gook Park, Dong Myong Kim, Dae Hwan Kim, and In-Young Chung

Appl. Phys. Lett. 99, 252103 (2011); http://dx.doi.org/10.1063/1.3669409 (3 pages) | Cited 1 time

Online Publication Date: 20 December 2011

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The hysteresis phenomenon has been widely observed in transfer characteristics of silicon nanowire (SiNW) biosensor devices in aqueous environment. Considering the experimental observation in the change of the liquid potential due to the charge flow through the oxide layer, we build up an electrical model for the biosensor system with the solution, SiNW, dielectric oxide, and the back-gated substrate, and investigate the hysteresis behavior based on the model.
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87.85.Rs Nanotechnologies-applications
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
87.85.Ox Biomedical instrumentation and transducers, including micro-electro-mechanical systems (MEMS)

Impact of fixed charge on metal-insulator-semiconductor barrier height reduction

Jenny Hu, Aneesh Nainani, Yun Sun, Krishna C. Saraswat, and H.-S. Philip Wong

Appl. Phys. Lett. 99, 252104 (2011); http://dx.doi.org/10.1063/1.3669414 (4 pages) | Cited 2 times

Online Publication Date: 20 December 2011

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Recently, the insertion of ultrathin insulators to form metal-insulator-semiconductor (MIS) contacts has been used extensively to reduce the Schottky barrier height and to shift the Fermi level pinning. In this paper, we investigate the physical non-idealities of the ultrathin insulator in Al/Al2O3/n-GaAs MIS through stoichiometry, density, and bandgap measurements. These structural non-idealities electrically manifest as bulk and interface fixed charges that are found to contribute to the observed barrier height reduction. The effect of fixed charge has not been considered before, and when combined with the previously reported interface dipoles, it provides a more thorough understanding of the MIS contacts.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.30.+y Surface double layers, Schottky barriers, and work functions
61.66.Bi Elemental solids
61.66.Dk Alloys

Persistent ion beam induced conductivity in zinc oxide nanowires

Andreas Johannes, Raphael Niepelt, Martin Gnauck, and Carsten Ronning

Appl. Phys. Lett. 99, 252105 (2011); http://dx.doi.org/10.1063/1.3671164 (3 pages) | Cited 1 time

Online Publication Date: 21 December 2011

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We report persistently increased conduction in ZnO nanowires irradiated by ion beam with various ion energies and species. This effect is shown to be related to the already known persistent photo conduction in ZnO and dubbed persistent ion beam induced conduction. Both effects show similar excitation efficiency, decay rates, and chemical sensitivity. Persistent ion beam induced conduction will potentially allow countable (i.e., single dopant) implantation in ZnO nanostructures and other materials showing persistent photo conduction.
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73.61.Ga II-VI semiconductors
66.30.H- Self-diffusion and ionic conduction in nonmetals
61.80.Jh Ion radiation effects
72.40.+w Photoconduction and photovoltaic effects

Predictive circuit model for noise in quantum cascade detectors

A. Delga, M. Carras, L. Doyennette, V. Trinité, A. Nedelcu, and V. Berger

Appl. Phys. Lett. 99, 252106 (2011); http://dx.doi.org/10.1063/1.3671328 (3 pages) | Cited 4 times

Online Publication Date: 21 December 2011

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Electronic noise in quantum cascade structures is investigated theoretically and experimentally under dark conditions. A model based on a unified and insightful vision of noise generating mechanisms is proposed and describes both thermal and shot noise behaviors. Dark measurements of quantum cascade detectors operating at 8 μm and 15 μm are retrieved with good quantitative agreement. This model is expected to be applicable to other quantum structures and under illumination.
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85.60.Gz Photodetectors (including infrared and CCD detectors)

Domain wall conductivity in oxygen deficient multiferroic YMnO3 single crystals

Y. Du, X. L. Wang, D. P. Chen, S. X. Dou, Z. X. Cheng, M. Higgins, G. Wallace, and J. Y. Wang

Appl. Phys. Lett. 99, 252107 (2011); http://dx.doi.org/10.1063/1.3671393 (4 pages) | Cited 1 time

Online Publication Date: 22 December 2011

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The transport properties of domain walls in oxygen deficient multiferroic YMnO3 single crystals have been probed using conductive atomic force microscopy and piezoresponse force microscopy. Domain walls exhibit significantly enhanced conductance after being poled in electric fields, possibly induced by oxygen vacancy ordering at domain walls. The electronic conduction can be understood by the Schottky emission and Fowler-Nordheim tunnelling mechanisms. Our results show that the domain wall conductance can be modulated through band structure engineering by manipulating ordered oxygen vacancies in the poling fields.
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77.80.Dj Domain structure; hysteresis
61.72.jd Vacancies
75.85.+t Magnetoelectric effects, multiferroics
71.20.Ps Other inorganic compounds
73.40.Gk Tunneling
77.22.Ej Polarization and depolarization
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