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19 Dec 2011

Volume 99, Issue 25, Articles (25xxxx)

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Appl. Phys. Lett. 99, 253701 (2011); http://dx.doi.org/10.1063/1.3666819 (3 pages)

Jun Huang, Hui Li, Wei Chen, Guo-Hua Lv, Xing-Quan Wang, Guo-Ping Zhang, Kostya Ostrikov, Peng-Ye Wang, and Si-Ze Yang
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Publisher’s Note: “Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors” [Appl. Phys. Lett. 99, 072117 (2011)]

A. Frazzetto, F. Giannazzo, P. Fiorenza, V. Raineri, and F. Roccaforte

Appl. Phys. Lett. 99, 259901 (2011); http://dx.doi.org/10.1063/1.3665121 (1 page)

Online Publication Date: 20 December 2011

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Abstract Unavailable
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99.10.Fg Publisher's note
85.30.Tv Field effect devices
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