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Appl. Phys. Lett. 99, 262503 (2011); http://dx.doi.org/10.1063/1.3672029 (3 pages)

Fast switching of magnetization in the ferromagnetic semiconductor (Ga,Mn)(As,P) using nonequilibrium phonon pulses

A. Casiraghi1, P. Walker1, A. V. Akimov1, K. W. Edmonds1, A. W. Rushforth1, E. De Ranieri2, R. P. Campion1, B. L. Gallagher1, and A. J. Kent1

1School of Physics and Astronomy, University of Nottingham, University Park, Nottingham NG7 2RD, United Kingdom
2Hitachi Cambridge Laboratory, Cambridge CB3 0HE, United Kingdom

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(Received 27 September 2011; accepted 2 December 2011; published online 28 December 2011)

We use short acoustic pulses to induce a fast irreversible switching of the magnetization orientation in a layer of (Ga,Mn)(As,P). The pulses are generated by femtosecond optical excitation of a metal transducer film and travel ballistically through the sample. We show that the switching is triggered by incoherent acoustic phonons, occurs through domain-related processes, and is concluded in ∼35 ns. We suggest that the mechanism behind the switching involves the holes in the material being heated due to their coupling to the phonons.

© 2011 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 75.60.Ej

    Magnetization curves, hysteresis, Barkhausen and related effects

  • 75.50.Pp

    Magnetic semiconductors

  • 75.50.Dd

    Nonmetallic ferromagnetic materials

  • 75.30.Gw

    Magnetic anisotropy

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
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