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Applied Physics Letters / Volume 99 / Issue 26 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 99, 263110 (2011); http://dx.doi.org/10.1063/1.3671367 (4 pages)

Direct imaging of the spatial diffusion of excitons in single semiconductor nanowires

M. A. Fickenscher1, H. E. Jackson1, L. M. Smith1, J. M. Yarrison-Rice2, J. H. Kang3, S. Paiman3, Q. Gao3, H. H. Tan3, and C. Jagadish3

1Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221, USA
2Department of Physics, Miami University, Oxford, Ohio 45056, USA
3Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia

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(Received 14 August 2011; accepted 15 November 2011; published online 29 December 2011)

We use spatially and temporally resolved photoluminescence to measure exciton diffusion in single zinc blende GaAs/AlGaAs core/shell and mixed phase InP nanowires. Excitons in the single phase GaAs/AlGaAs nanowires are seen to diffuse rapidly throughout the nanowire with a measured diffusion constant ranging from 45 to 100 cm2/s, while in the mixed phase, InP nanowire electrons and holes are seen to rapidly localize to the quantum confined states in the zinc blende and wurtzite segments, respectively. The diffusion constant in the GaAs/AlGaAs nanowire is similar to the best hole mobilities observed in modulation doped heterostructures.

© 2011 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, diffusion, excitons, gallium arsenide, hole mobility, III-V semiconductors, indium compounds, nanowires, photoluminescence, semiconductor quantum wires

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3671367

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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