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26 Dec 2011

Volume 99, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 99, 261101 (2011); http://dx.doi.org/10.1063/1.3660243 (3 pages)

T. Schwarzbäck, H. Kahle, M. Eichfelder, R. Roßbach, M. Jetter, and P. Michler
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Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment

Kuan-Chang Chang, Tsung-Ming Tsai, Ting-Chang Chang, Yong-En Syu, Chia-C. Wang, Siang-Lan Chuang, Cheng-Hua Li, Der-Shin Gan, and Simon M. Sze

Appl. Phys. Lett. 99, 263501 (2011); http://dx.doi.org/10.1063/1.3671991 (4 pages) | Cited 7 times

Online Publication Date: 27 December 2011

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In the study, we reduced the operation current of resistance random access memory (RRAM) by supercritical CO2 (SCCO2) fluids treatment. The power consumption and joule heating degradation of RRAM device can be improved greatly by SCCO2 treatment. The defect of nickel-doped silicon oxide (Ni:SiOx) was passivated effectively by the supercritical fluid technology. The current conduction of high resistant state in post-treated Ni:SiOx film was transferred to Schottky emission from Frenkel-Pool due to the passivation effect. Additionally, we can demonstrate the passivation mechanism of SCCO2 for Ni:SiOx by material analyses of x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy.
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84.30.Sk Pulse and digital circuits
79.60.Dp Adsorbed layers and thin films
78.30.Hv Other nonmetallic inorganics

Ultraviolet/orange bicolor electroluminescence from an n-ZnO/n-GaN isotype heterojunction light emitting diode

Huihui Huang, Guojia Fang, Songzhan Li, Hao Long, Xiaoming Mo, Haoning Wang, Yuan Li, Qike Jiang, David L. Carroll, Jianbo Wang, Mingjun Wang, and Xingzhong Zhao

Appl. Phys. Lett. 99, 263502 (2011); http://dx.doi.org/10.1063/1.3672051 (4 pages) | Cited 7 times

Online Publication Date: 27 December 2011

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We fabricate an ultraviolet (UV)/orange bicolor light emitting diode (LED) based on an n-ZnO/n-GaN isotype heterojunction, which presents a sharp ultraviolet emission centered at 367 nm and a broad orange emission centered at 640 nm under forward and reverse biases, respectively. Time dependence electroluminescence (EL) measurements reveal that this device shows good stability. The electroluminescence mechanism of the bicolor light emitting diode is discussed in terms of the material properties of the interfacial layer and the luminescence properties of the device in this work.
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85.60.Jb Light-emitting devices

Non-volatile high-speed resistance switching nanogap junction memory

Somu Kumaragurubaran, Tsuyoshi Takahashi, Yuichiro Masuda, Shegio Furuta, Torou Sumiya, Masatoshi Ono, Tetsuo Shimizu, Hiroshi Suga, Masayo Horikawa, and Yasuhisa Naitoh

Appl. Phys. Lett. 99, 263503 (2011); http://dx.doi.org/10.1063/1.3672195 (4 pages)

Online Publication Date: 28 December 2011

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Different voltage pulses were applied to Au nanogap junction to study the resistance switching characteristics. Consistent switching from a low to high resistance state was accomplished even at 20 ns pulse. Instead of setting current compliance for the reverse switching, we introduced a series resistance to the nanogap junction to limit the tunneling current and effectively performed the switching. The parasitic capacitance is shown to affect the programming speed. Upon reducing the capacitance, ns regime switching speed is achieved which indicates the potentiality of nanogap junction for high-speed random access memory.
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84.30.Sk Pulse and digital circuits

ZnO/Sn:In2O3 and ZnO/CdTe band offsets for extremely thin absorber photovoltaics

T. C. Kaspar, T. Droubay, and J. E. Jaffe

Appl. Phys. Lett. 99, 263504 (2011); http://dx.doi.org/10.1063/1.3672218 (3 pages) | Cited 2 times

Online Publication Date: 28 December 2011

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Band alignments were measured by x-ray photoelectron spectroscopy for thin films of ZnO on polycrystalline Sn:In2O3 (ITO) and single crystal CdTe. Hybrid density functional theory calculations of epitaxial zinc blende ZnO(001) on CdTe(001) were performed to compare with experiment. A conduction band (CB) offset of −0.6 eV was measured for ZnO/ITO, which is larger than desired for efficient electron injection. For ZnO/CdTe, the experimental conduction band offset of 0.25 eV is smaller than the calculated value of 0.67 eV, possibly due to the TeOx layer at the ZnO/CdTe interface. The measured conduction band offset for ZnO/CdTe is favorable for photovoltaic devices.
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71.20.Nr Semiconductor compounds
73.20.At Surface states, band structure, electron density of states
79.60.Bm Clean metal, semiconductor, and insulator surfaces
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

Three-dimensional shaping of sub-micron GaAs Schottky junctions for zero-bias terahertz rectification

R. Casini, A. Di Gaspare, E. Giovine, A. Notargiacomo, M. Ortolani, and V. Foglietti

Appl. Phys. Lett. 99, 263505 (2011); http://dx.doi.org/10.1063/1.3672439 (4 pages) | Cited 2 times

Online Publication Date: 28 December 2011

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We demonstrate a rectification mechanism based on quantum tunneling through the narrow Schottky barrier of a sub-micrometric Au/Ti/n-GaAs junction, which is capable of efficient power detection of free-space terahertz radiation beams even without an applied dc bias. Three-dimensional shaping of the junction geometry provides an enhanced zero-bias tunneling probability due to increased electric fields at the junction, resulting in cutoff frequencies up to 0.55 THz, responsivity up to 200 V/W, and noise equivalent power better than 10−9 W/Hz0.5 without applied dc bias.
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73.40.Ei Rectification
73.40.Ns Metal-nonmetal contacts

The origin and consequences of push-pull breakdown in series connected dielectrics

Muhammad Masuduzzaman, Dhanoop Varghese, Honglin Guo, Srikanth Krishnan, and Muhammad Ashraful Alam

Appl. Phys. Lett. 99, 263506 (2011); http://dx.doi.org/10.1063/1.3672216 (3 pages) | Cited 1 time

Online Publication Date: 30 December 2011

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Given the extensive literature on the dielectric failure probability (F) of single as well as sandwich capacitors, one might conclude that the overall failure probability of k series connected (SC) capacitors is simply given by the uncorrelated product of failure probabilities of single capacitors, i.e., F = Πi = 1i = kFi. Instead, in this paper, we show that the SC capacitors experience non-trivial oscillatory push-pull voltage sequence such that the breakdowns among the capacitors become strongly correlated, with important/nontrivial implications for the overall capacitor lifetime. We use a cell-based Monte Carlo approach to numerically establish the characteristic features of failure distribution associated with such correlated breakdown in the SC capacitors.
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84.32.Tt Capacitors
77.22.Jp Dielectric breakdown and space-charge effects
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