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26 Dec 2011

Volume 99, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 99, 261101 (2011); http://dx.doi.org/10.1063/1.3660243 (3 pages)

T. Schwarzbäck, H. Kahle, M. Eichfelder, R. Roßbach, M. Jetter, and P. Michler
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Distribution of electronic reconstruction at the n-type LaAlO3/SrTiO3 interface revealed by hard x-ray photoemission spectroscopy

Y. Y. Chu, Y. F. Liao, V. T. Tra, J. C. Yang, W. Z. Liu, Y. H. Chu, J. Y. Lin, J. H. Huang, J. Weinen, S. Agrestini, K.-D. Tsuei, and D. J. Huang

Appl. Phys. Lett. 99, 262101 (2011); http://dx.doi.org/10.1063/1.3672099 (3 pages) | Cited 1 time

Online Publication Date: 27 December 2011

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We investigated the electronic reconstruction at the n-type LaAlO3/SrTiO3 interface with hard x-ray photoelectron spectroscopy (HAXPES) under grazing incidence. By exploiting the collapse of evanescent x-ray waves and the abrupt increase of x-ray absorption at the critical incidence angle, our HAXPES study reveals a 2% electronic reconstruction from Ti4+ to Ti3+ occurring near the interface. Such an electronic reconstruction also extends from the interface into SrTiO3 with a depth of about 48 Å (∼12 unit cells) and an estimated total charge transfer of ∼0.24 electrons per two-dimensional unit cell.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
78.70.Dm X-ray absorption spectra

Enhancement of the photoelectrochemical properties of Cl-doped ZnO nanowires by tuning their coaxial doping profile

Jiandong Fan, Frank Güell, Cristian Fábrega, Alexey Shavel, Alex Carrete, Teresa Andreu, Joan Ramón Morante, and Andreu Cabot

Appl. Phys. Lett. 99, 262102 (2011); http://dx.doi.org/10.1063/1.3673287 (4 pages) | Cited 5 times

Online Publication Date: 27 December 2011

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Arrays of vertically aligned ZnO:Cl/ZnO core-shell nanowires were used to demonstrate that the control of the coaxial doping profile in homojunction nanostructures can improve their surface charge carrier transfer while conserving potentially excellent transport properties. It is experimentally shown that the presence of a ZnO shell enhances the photoelectrochemical properties of ZnO:Cl nanowires up to a factor 5. Likewise, the ZnO shell promotes the visible photoluminescence band in highly conducting ZnO:Cl nanowires. These lines of evidence are associated with the increase of the nanowires’ surface depletion layer.
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61.72.uj III-V and II-VI semiconductors
82.50.-m Photochemistry
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.40.Fy Semiconductors
78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors

Origin of charge separation in III-nitride nanowires under strain

Yelong Wu, Guangde Chen, Su-Huai Wei, Mowafak M. Al-Jassim, and Yanfa Yan

Appl. Phys. Lett. 99, 262103 (2011); http://dx.doi.org/10.1063/1.3673323 (3 pages) | Cited 1 time

Online Publication Date: 28 December 2011

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The structural and electronic properties of BN, AlN, and GaN nanowires (NWs) under different strain condition are investigated using first-principles calculations. We found an anomaly of band gap change with respect to the applied external uniaxial strain. We show that this is due to the band crossing caused by the crystal field splitting at the top of the valance band. Due to the difference of the atomic relaxation at the core and surface regions of the NW, we show that electron and hole separation can be achieved when the compressive uniaxial strain exceeds the critical value |εc|.
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61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
71.20.Nr Semiconductor compounds
71.70.Ch Crystal and ligand fields

GaSb nanowire single-hole transistor

Bahram Ganjipour, Henrik A. Nilsson, B. Mattias Borg, Lars-Erik Wernersson, Lars Samuelson, H. Q. Xu, and Claes Thelander

Appl. Phys. Lett. 99, 262104 (2011); http://dx.doi.org/10.1063/1.3673328 (3 pages) | Cited 3 times

Online Publication Date: 28 December 2011

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We present an experimental study of single hole transistors (SHTs) made from p-type GaSb nanowires. Closely spaced source-drain electrodes are fabricated onto GaSb nanowires to define a SHT within a GaSb nanowire. Room temperature back-gate transfer characteristics show typical hole transport behavior. The fabricated devices are characterized by transport measurements at 1.5 K, where periodic conductance oscillations due to Coulomb blockade are observed and a charging energy of 5 meV is determined.
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85.35.Ds Quantum interference devices

Determination of secondary phases in kesterite Cu2ZnSnS4 thin films by x-ray absorption near edge structure analysis

Justus Just, Dirk Lützenkirchen-Hecht, Ronald Frahm, Susan Schorr, and Thomas Unold

Appl. Phys. Lett. 99, 262105 (2011); http://dx.doi.org/10.1063/1.3671994 (3 pages) | Cited 6 times

Online Publication Date: 29 December 2011

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Secondary phases in Cu2ZnSnS4 (CZTS) are investigated by x-ray absorption spectroscopy. Evaluating the x-ray absorption near edge structure at the sulfur K-edge, we show that secondary phases exhibit sufficiently distinct features to allow their quantitative determination with high accuracy. We are able to quantify the ZnS fraction with an absolute accuracy of ±3%, by applying linear combination analysis using reference spectra. We find that even in CZTS thin films with [Sn]/[Zn] ≈ 1, a significant amount of ZnS can be present. A strong correlation of the ZnS-content with the degradation of the electrical performance of solar cells is observed.
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88.40.jn Thin film Cu-based I-III-VI2 solar cells
78.70.Dm X-ray absorption spectra

Electron mobility limited by scattering from screened positively charged dislocation lines within indium nitride

Erfan Baghani and Stephen K. O’Leary

Appl. Phys. Lett. 99, 262106 (2011); http://dx.doi.org/10.1063/1.3671117 (3 pages) | Cited 4 times

Online Publication Date: 30 December 2011

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In the present work, we address the open question of the contribution from threading dislocations to the problem of unintentional n-type conductivity exhibited by indium nitride through an examination of the effect that positively charged dislocation lines have on the transverse electron mobility within this material. Assuming that the threading dislocation lines within indium nitride act as a source for free electrons, the screening associated with the positively charged threading dislocation lines is evaluated. The impact this screening has on the dislocation limited electron mobility within this material is then considered. Our results indicate that one of the implications of attributing a donor character to the threading dislocation lines within indium nitride would be a strong non-uniformity in the free electron concentration in the plane of growth of this semiconductor. This contrasts dramatically with the case of gallium nitride.
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72.80.Ey III-V and II-VI semiconductors
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
72.20.Ee Mobility edges; hopping transport
72.20.Fr Low-field transport and mobility; piezoresistance
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