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26 Dec 2011

Volume 99, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 99, 261101 (2011); http://dx.doi.org/10.1063/1.3660243 (3 pages)

T. Schwarzbäck, H. Kahle, M. Eichfelder, R. Roßbach, M. Jetter, and P. Michler
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Wavelength tunable ultraviolet laser emission via intra-cavity frequency doubling of an AlGaInP vertical external-cavity surface-emitting laser down to 328 nm

T. Schwarzbäck, H. Kahle, M. Eichfelder, R. Roßbach, M. Jetter, and P. Michler

Appl. Phys. Lett. 99, 261101 (2011); http://dx.doi.org/10.1063/1.3660243 (3 pages) | Cited 1 time

Online Publication Date: 27 December 2011

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We demonstrate an optically pumped vertical external-cavity surface-emitting laser in a compact v-shaped cavity configuration for frequency doubling to the ultraviolet (UV) spectral range at ∼330 nm. The fundamental red laser emission is realized with a metal-organic vapor-phase epitaxy grown (GaxIn1−x)0.5P0.5/[(AlxGa1−x)yIn1−y]0.5P0.5 multi-quantum-well structure. Second harmonic generation is accomplished by using a beta barium borate non-linear crystal to generate maximum UV output powers exceeding 100 mW. By using a birefringent filter, we are able to tune the fundamental laser resonance to realize a maximum tuning range of 7.5 nm of the second harmonic.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Ci Filters, zone plates, and polarizers

Effect of asymmetric Schottky barrier on GaN-based metal-semiconductor-metal ultraviolet detector

Dabing Li, Xiaojuan Sun, Hang Song, Zhiming Li, Hong Jiang, Yiren Chen, Guoqing Miao, and Bo Shen

Appl. Phys. Lett. 99, 261102 (2011); http://dx.doi.org/10.1063/1.3672030 (3 pages) | Cited 3 times

Online Publication Date: 27 December 2011

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An asymmetric Schottky barrier metal-semiconductor-metal (MSM) ultraviolet (UV) detector with Ni/GaN/Au structure was designed and the effect of the asymmetric Schottky barrier on the detector response was investigated. This detector had response at 0 V bias and increased responsivity when a positive bias was applied to the Ni/GaN contact; however, the internal gain disappeared when a negative bias was applied to this point. This contrasts with a symmetric Ni/GaN/Ni Schottky barrier MSM UV detector which had no internal gain under positive/negative bias and almost no response at 0 V bias. The improved performance of the asymmetric Schottky barrier detector was because of the lower work function of Au causing reduction of Schottky barrier and hence enhancing a hole-accumulating and trapping process, which resulted in internal gain.
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85.60.Gz Photodetectors (including infrared and CCD detectors)

Realization of tightly confined channel plasmon polaritons at low frequencies

Tao Jiang, Linfang Shen, Jin-Jei Wu, Tzong-Jer Yang, Zhichao Ruan, and Lixin Ran

Appl. Phys. Lett. 99, 261103 (2011); http://dx.doi.org/10.1063/1.3672048 (3 pages) | Cited 5 times

Online Publication Date: 27 December 2011

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Subwavelength guiding of channel plasmon polaritons (CPPs) is realized by a properly structured metallic groove at frequencies far below the plasma frequency of metal. Compared with CPPs at visible frequencies, more versatile physical mechanisms can be introduced in these CPPs by surface patterning, so that they can exhibit superior features as visible CPPs, while eliminating the potential drawbacks of the latter. Such designer CPPs are explained physically with the effective-index method and verified experimentally in the microwave regime.
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71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.68.+m Optical properties of surfaces

High power, continuous wave, quantum cascade ring laser

Y. Bai, S. Tsao, N. Bandyopadhyay, S. Slivken, Q. Y. Lu, D. Caffey, M. Pushkarsky, T. Day, and M. Razeghi

Appl. Phys. Lett. 99, 261104 (2011); http://dx.doi.org/10.1063/1.3672049 (3 pages) | Cited 2 times

Online Publication Date: 28 December 2011

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We demonstrate a quantum cascade ring laser with high power room temperature continuous wave operation. A second order distributed feedback grating buried inside the waveguide provides both in-plane feedback and vertical power outcoupling. Total output power reaches 0.51 W at an emission wavelength around 4.85 μm. Single mode operation persists up to 0.4 W. The far field analysis indicates that the device operates in a high order mode. The magnetic and electric components of the ring-shaped lasing beam are in radial and azimuthal directions, respectively.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Dj Gratings

Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes

Tim Kolbe, Arne Knauer, Chris Chua, Zhihong Yang, Viola Kueller, Sven Einfeldt, Patrick Vogt, Noble M. Johnson, Markus Weyers, and Michael Kneissl

Appl. Phys. Lett. 99, 261105 (2011); http://dx.doi.org/10.1063/1.3672209 (4 pages) | Cited 3 times

Online Publication Date: 28 December 2011

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The temperature and strain dependence of the polarization of the in-plane electroluminescence of (0001) orientated (In)(Al)GaN multiple quantum well light emitting diodes in the ultraviolet spectral range has been investigated. For light emitting diodes with emission wavelength shorter than 300 nm the transversal-electric polarized emission intensity increases relative to the transversal-magnetic emission with increasing temperature, whereas it decreases for ultraviolet light emitting diodes with longer emission wavelength. This effect can be attributed to occupation of deeper valence bands with increasing temperature. In addition, strain also strongly influence the in-plane light polarization of near ultraviolet light emitting diodes. The transversal-magnetic polarized emission becomes more dominant with decreasing in-plane tensile strain of the InGaN/(In)(Al)GaN multiple quantum well active region.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Microfabricated continuous cubic phase plate induced Airy beams for optical manipulation with high power efficiency

Rui Cao, Yong Yang, Jingang Wang, Jing Bu, Mingwei Wang, and X.-C. Yuan

Appl. Phys. Lett. 99, 261106 (2011); http://dx.doi.org/10.1063/1.3672210 (3 pages) | Cited 1 time

Online Publication Date: 28 December 2011

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We studied and demonstrated optical trapping capabilities of an Airy beam generated with a cubic phase plate incorporated into a conventional optical tweezer system. The power efficiency and damage threshold of the cubic phase plate were found to be much higher when spatial light modulators were employed in beam generation.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.50.Wk Mechanical effects of light on material media, microstructures and particles
42.79.Hp Optical processors, correlators, and modulators

Performance of large-area few-layer graphene saturable absorber in femtosecond bulk laser

Jin-Long Xu, Xian-Lei Li, Jing-Liang He, Xiao-Peng Hao, Yong-Zhong Wu, Ying Yang, and Ke-Jian Yang

Appl. Phys. Lett. 99, 261107 (2011); http://dx.doi.org/10.1063/1.3672213 (4 pages) | Cited 7 times

Online Publication Date: 29 December 2011

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Using large-area graphene sheets of 1-10 layers prepared by the improved liquid phase exfoliation technique, the mode locking operation of a diode-pumped Yb:KGW laser was demonstrated. Near-transform-limited 428 fs pulses were yielded at 1031.1 nm with an output power of 504 mW, corresponding to the slope efficiency of 27% and peak power of 13.8 kW. The output power ratio and the slope efficiency ratio of mode locking to free running were as high as 93% and 100%, respectively. This demonstration may open a proper way to achieve low-cost and efficient femtosecond bulk laser.
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42.60.Fc Modulation, tuning, and mode locking
42.50.Gy Effects of atomic coherence on propagation, absorption, and amplification of light; electromagnetically induced transparency and absorption
42.60.By Design of specific laser systems
42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

On-chip single photon emission from an integrated semiconductor quantum dot into a photonic crystal waveguide

Andre Schwagmann, Sokratis Kalliakos, Ian Farrer, Jonathan P. Griffiths, Geb A. C. Jones, David A. Ritchie, and Andrew J. Shields

Appl. Phys. Lett. 99, 261108 (2011); http://dx.doi.org/10.1063/1.3672214 (3 pages) | Cited 16 times

Online Publication Date: 29 December 2011

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We demonstrate the in-plane emission of highly polarized single photons from an InAs quantum dot embedded into a photonic crystal waveguide. The spontaneous emission rates are Purcell-enhanced by the coupling of the quantum dot to a slow-light mode of the waveguide. Photon-correlation measurements confirm the sub-Poissonian statistics of the in-plane emission. Under optical pulse excitation, single photon emission rates of up to 19 MHz into the guided mode are demonstrated, which corresponds to a device efficiency of 24%. These results herald the monolithic integration of sources in photonic quantum circuits.
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42.82.Et Waveguides, couplers, and arrays
42.50.-p Quantum optics
42.70.Qs Photonic bandgap materials
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Low-loss flake-graphene saturable absorber mirror for laser mode-locking at sub-200-fs pulse duration

B. V. Cunning, C. L. Brown, and D. Kielpinski

Appl. Phys. Lett. 99, 261109 (2011); http://dx.doi.org/10.1063/1.3672418 (3 pages) | Cited 9 times

Online Publication Date: 29 December 2011

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Saturable absorbers are a key component for mode-locking femtosecond lasers. Polymer films containing graphene flakes have recently been used in transmission as laser mode-lockers but suffer from high nonsaturable loss, limiting their application in low-gain lasers. Here, we present a saturable absorber mirror based on a film of pure graphene flakes. The device is used to mode lock an erbium-doped fiber laser, generating pulses with state-of-the-art, sub-200-fs duration. The laser characteristic indicates that the film exhibits low nonsaturable loss (13% per pass) and large absorption modulation depth (45% of low-power absorption).
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42.60.Fc Modulation, tuning, and mode locking
42.79.Bh Lenses, prisms and mirrors

Lasing in planar semiconductor diodes

Giorgio De Simoni, Lukas Mahler, Vincenzo Piazza, Alessandro Tredicucci, Christine A. Nicoll, Harvey E. Beere, David A. Ritchie, and Fabio Beltram

Appl. Phys. Lett. 99, 261110 (2011); http://dx.doi.org/10.1063/1.3672438 (4 pages)

Online Publication Date: 30 December 2011

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We present a planar laser diode based on a simple fabrication scheme compatible with virtually any geometry accessible by standard semiconductor lithography technique. We show that our lasers exhibit ∼1 GHz -3 dB-modulation-bandwidth already in this prototypical implementation. Directions for a significant speed increase are discussed.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking

Electrically pumped simultaneous ultraviolet and visible random laser actions from ZnO-CdO interdiffused film

Ye Tian, Xiangyang Ma, Luelue Xiang, and Deren Yang

Appl. Phys. Lett. 99, 261111 (2011); http://dx.doi.org/10.1063/1.3672831 (4 pages) | Cited 1 time

Online Publication Date: 30 December 2011

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We have demonstrated electrically pumped simultaneous ultraviolet (UV) and visible random laser (RL) actions from ZnO-CdO interdiffused film. The interdiffusion between ZnO and CdO films at 700 °C forms composition-graded CdxZn1−xO alloy within the ZnO-CdO interdiffused film, which is luminescent in both UV and visible regions. A device based on SiO2/ZnO-CdO/SiO2 double-barrier structure on silicon substrate, where SiO2 acts as the barrier, is constructed for electrical pumping of the ZnO-CdO interdiffused film. As the device is applied with sufficiently high forward bias with negative voltage connecting to the silicon substrate, the UV and visible RL actions simultaneously occur. The mechanism for such electrically pumped RL actions has been tentatively elucidated.
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78.60.Fi Electroluminescence
42.55.Zz Random lasers
42.55.Px Semiconductor lasers; laser diodes

Whispering gallery modes with different polarizations in semiconductor microrod with rectangle shape

Xiaoliang Ye, Huibing Mao, Jiqing Wang, and Ziqiang Zhu

Appl. Phys. Lett. 99, 261112 (2011); http://dx.doi.org/10.1063/1.3673329 (3 pages) | Cited 1 time

Online Publication Date: 30 December 2011

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The whispering gallery modes (WGMs) of the ZnO photoluminescence emission were investigated in this paper. The transmission electron microscopy and X-ray diffraction results confirm that the rectangle microrod has a single crystalline wurtzite structure. Except for the band-edge emission, the visible luminescence band of the ZnO microrod presents the WGMs with two different polarizations. In a large waveband, the WGMs modes with two different polarizations have same mode spacing. Because of the phase difference in reflectance for two polarizations, the WGMs for s and p polarizations are distributed interlacedly. Due to the property difference, the WGMs for two polarizations have different appearances.
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78.55.Et II-VI semiconductors
78.40.Fy Semiconductors
81.05.Dz II-VI semiconductors
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